Inphi Corporation

Infinera Corporation

Marvell Asia Pte., Ltd.

Masaki Kato

Radhakrishnan L Nagarajan

Jie Lin

Fred A Kish, Jr

Mehrdad Ziari

Charles H Joyner

Peng-Chih Li

Xiaoguang Tu

Peter Weindel Evans

Samira Karimelahi

Scott W Corzine

David F Welch

Michael Francis Van Leeuwen

Brian Taylor

Yu Li

Vincent G Dominic

Hari Shankar

Vikrant Lal

Radha Nagarajan

Yang Fu

Nourhan Eid

Kenneth Ling Wong

Kuang-Tsan Wu

Chris Togami

Alan C Nilsson

Matthew L Mitchell

Richard P Schneider

Jeffrey Thomas Rahn

Drew Daniel Perkins

Atul Mathur

Timothy Butrie

Pavel Viktorovich Studenkov

Christopher Liou

Andrew G Dentai

Bruno Tourette

Sheila K Hurtt

Robb Johnson

Sanjeev Murthy

Randal A Salvatore

Damien Jean Henri Lambert

Han Henry Sun

John Duncan McNicol

Mark Missey

David J Krause

Lenin Patra

Fred A Kish

Damien Lambert

Matthias Kuntz

Jacco L Pleumeekers

Tonmoy Shankar Mukherjee

Pei-Keng Fu

Hsu-Feng Chou

Chunshu Zhang

Gary Mak

Hamed Pishvaibazargani

Wanjun Wang

Nadhakrishnan L Nagarajan

A silicon photonics modulator includes a substrate, a PN junction disposed on the substrate, the PN junction formed by a first L-shaped region doped with a p-type doping abutting a second L-shaped region doped with an n-type doping, a first plurality of regions each having different p-type doping concentrations greater than the first L-shaped region, and a second plurality of regions each having different n-type doping concentrations greater than the second L-shaped region. The silicon photonics modulator includes a first electrical contact on one of the first plurality of regions, a second electrical contact on one of the second plurality of regions, and multiple grating pillars doped with the n-type doping or the p-type doping, each of the multiple grating pillars spaced apart from the PN junction and spaced apart from one another.

Optics ring modulator including grating pillar

An optical modulator includes a substrate defining a plane and first, second, and third PN junctions formed on the substrate. The first PN junction is formed on the substrate by a first region doped with a p-type doping abutting a second region doped with an n-type doping. The second PN junction is formed on the substrate adjacent to the second region of the first PN junction. The third PN junction is formed on the substrate adjacent to the first region of the first PN junction.

Ultra-high bandwidth multi-junction silicon optical modulator

A silicon optical modulator with improved bandwidth includes a silicon waveguide with a rib structure in cross section connected to a first slab region and a second slab region respectively on two opposite sides of the rib structure. The silicon optical modulator further includes a PN junction formed in the rib structure with a P-type part joined with the first slab region and a N-type part joined with the second slab region. Additionally, the silicon optical modulator includes multiple P-type doped sections formed one next to another in the first slab region ended with a first end region and multiple N-type doped sections one next to another formed in the second slab region ended with a second end region. The multiple P-type or N-type doped sections are configured with increasing doping levels for sections further away from the rib structure.

Multi-doped slab silicon optical modulator

A germanium-on-silicon avalanche photodetector includes a silicon device layer of a silicon-on-insulator substrate having a central region characterized by modest-heavy n+ doping state between a first electrode region and a second electrode region in heavy n++ doping state; a first sub-layer of the central region modified to nearly neutral doping state and located from a first depth down to a second depth below a top surface of the silicon device layer; a second sub-layer of the central region modified to modest p doping state embedded from the top surface down to the first depth to interface with the first sub-layer; a layer of germanium with a bottom side attached to the top surface of the second sub-layer; and a third sub-layer embedded into a top side of the layer of germanium, characterized by heavy p++ doping state.

Germanium-on-silicon avalanche photodetector in silicon photonics platform, method of making the same

In an optical receiver apparatus for use with multiple optical modulation techniques, a photodiode circuit is configured to process optical signals corresponding to multiple optical modulation techniques, including a first modulation technique and a second modulation technique different from the first modulation technique. The photodiode circuit includes: a first photodiode configured to receive a first optical signal corresponding to a first modulation technique, and a multiple-input second photodiode coupled in series with the first photodiode. The multiple-input second photodiode is configured to receive i) a second optical signal corresponding to the first modulation technique, and ii) a third optical signal corresponding to the second modulation technique. An input of a transimpedance amplifier is coupled to the first photodiode and the second photodiode via a node between the first photodiode and the second photodiode.

Reconfigurable optical receiver for use with multiple modulation techniques

An optical modulator includes, a semiconductor substrate, an optical waveguide portion disposed on the semiconductor substrate, a first P-N junction disposed on the semiconductor substrate, and a second P-N disposed on the semiconductor substrate. The optical waveguide portion provides an optical path for light that is to be modulated. The first P-N junction is disposed on the semiconductor substrate along the optical path and defines a border between an N-doped portion disposed on the semiconductor substrate and a P-doped portion disposed on the semiconductor substrate. The second P-N junction is disposed on a portion of the semiconductor substrate alongside the optical path and spaced apart from the first P-N junction.

Semiconductor-based optical modulator

A silicon photonics integration circuit includes a silicon substrate member; a RX sub-circuit formed in the silicon substrate member including multiple RX-input ports each having a mode size converter configured to receive an incoming light signal into one of multiple waveguides and multiple RX photo detectors coupled respectively to the multiple waveguides; and a TX sub-circuit formed in the silicon substrate member including one or more TX-input ports each having a mode size converter coupled to a first TX photo detector into one input waveguide, one or more 1×2 directional couplers each coupled between the input waveguide and two mod-input waveguides, multiple modulators coupled between respective multiple mod-input waveguides and multiple mod-output waveguides each being coupled to a second TX photo detector into one of multiple output waveguides, and multiple TX-output ports each having a mode size converter coupled to respective one of the multiple output waveguides.

Silicon photonics integration circuit

A silicon-based edge coupler for coupling a fiber with a waveguide includes a cantilever member being partially suspended with its anchored end coupled to a silicon photonics die in a first part of a silicon substrate and a free end terminated near an edge region separating a second part of the silicon substrate from the first part. The edge coupler further includes a mechanical stopper formed at the edge region with a gap distance ahead of the free end of the cantilever member. Additionally, a V-groove is formed in the second part of the silicon substrate characterized by a top opening and a bottom plane symmetrically connected by two sloped side walls along a fixed Si-crystallography angle. The V-groove is configured to support a fiber with an end facet being pushed against the mechanical stopper and a core center being aligned with the free end of the cantilever member.

Silicon photonics based fiber coupler

A tunable laser for a transceiver includes a silicon photonics substrate, first and second patterned regions each being defined in the substrate a step lower than a flat surface region of the substrate, first and second laser diode chips arranged in the first and second patterned regions, the patterned regions being configured to align the gain regions of the first and second laser diode chips with integrated couplers formed in the substrate adjacent to the first and second patterned regions to facilitate flip-bonding the first and second laser diode chips within the patterned regions, and a tuning filter coupled to the first laser diode chip and the second laser diode chip via the integrated couplers. The tuning filter is configured to receive laser light from each of the first and second laser diode chips and generate a laser output having a gain determined by each of the gain regions.

Silicon photonics based tunable laser

A circuit for detecting an optical data signal includes a photonics substrate and first and second photodiodes formed in the photonics substrate. The first photodiode is configured to receive, via an input port formed in the photonics substrate, a first portion of the optical data signal and convert light power of the first portion of the optical data signal to generate a first current based on the optical data signal. The second photodiode is configured to output a second current without receiving any portion of the optical data signal. The second current corresponds to a dark current induced in the second photodiode. The circuit is configured to subtract the second current from the first current to generate an output signal corresponding to a power of the optical data signal without dark current induced in the first photodiode.

Circuit for detecting low-power optical data signal

A silicon optical modulator includes a silicon-on-insulator substrate and a first waveguide and a second waveguide arranged parallel to each other in the silicon-on-insulator substrate. The first waveguide includes a first PN junction. The second waveguide includes a second PN junction. At least one of the first PN junction and the second PN junction is disposed at an interface between a P type doped region and a N type doped region. The interface has an irregular shape that is not perpendicular to a plane in which the silicon-on-insulator substrate lies.

Silicon optical modulator, method for making the same

A silicon photonic device includes a silicon-on-insulator substrate, a waveguide, and a plate. The silicon-on-insulator substrate includes a silicon layer and a silicon dioxide layer. The waveguide is disposed on the silicon-on-insulator substrate. The silicon dioxide layer at least partially overlays the waveguide. The plate exhibits metallic characteristics and is at least partially embedded in the silicon dioxide layer of the silicon-on-insulator substrate. The plate is spaced apart from the waveguide and is configured to mitigate transverse magnetic emission propagating through the waveguide.

TE polarizer based on SOI platform

An apparatus for monitoring strain in an optical chip in silicon photonics platform. The apparatus includes a silicon photonics substrate shared with the optical chip. Additionally, the apparatus includes an optical input configured in the silicon photonics substrate to supply an input signal of a single wavelength. The apparatus further includes a first waveguide arm and a second waveguide arm embedded in the silicon photonics substrate to form an on-chip interferometer. The second waveguide arm forms a delay line being disposed at a region in or adjacent to the optical chip. The on-chip interferometer is configured to generate an interference pattern serving as an indicator of strain distributed at the region in or adjacent to the optical chip. The interference pattern is caused by a temperature-independent phase shift at the single wavelength of the interferometer between the first waveguide arm and the second waveguide arm.

Temperature insensitive distributed strain monitoring apparatus and method

A silicon optical modulator is fabricated to have a multi-slab structure between the contacts and the waveguide, imparting desirable performance attributes. A first slab comprises dopant of a first level. A second slab adjacent to (e.g., on top of) the first slab, comprises a doped region proximate to a contact, and an intrinsic region proximate to the waveguide. The parallel resistance properties and low overlap between the highly doped silicon and optical mode pigtail afforded by the multi-slab configuration, allow the modulator to operate with reduced optical losses and at a high speed. Embodiments may be implemented in a Mach-Zehnder interferometer or in micro-ring resonator modulator configuration.

Dual-slab-layer low-loss silicon optical modulator

A method for making a pair of photodiodes to detect low-power optical signal includes providing a waveguide including one or more branches in a silicon photonics substrate to deliver an input optical signal to the silicon photonics integrated circuit; forming a pair of nearly redundant photodiodes in silicon photonics platform in the silicon photonics substrate. coupling a first one of the pair of nearly redundant photodiodes optically to each of the one or more branches for receiving the input optical signal combined from all of the one or more branches; coupling a second one of the pair of nearly redundant photodiodes electrically in series to the first one of the pair of nearly redundant photodiodes; and drawing a current from the first one of the pair of nearly redundant photodiodes under a reversed bias voltage applied to the pair of nearly redundant photodiodes.

Method for detecting low-power optical signal with high sensitivity

Growing community of inventors

Palo Alto, CA, United States of America

Masaki Kato