Toshiba Memory Corporation

Kioxia Corporation

Kabushiki Kaisha Toshiba

Advanced Lcd Technologies Development Center Co., Ltd.

Masaki Kado

Yasuaki Ootera

Tsuyoshi Kondo

Michael Arnaud Quinsat

Susumu Hashimoto

Shiho Nakamura

Nobuyuki Umetsu

Takuya Shimada

Yoshihiro Ueda

Hideaki Aochi

Yasuhito Yoshimizu

Shinji Miyano

Tomoya Sanuki

Yuichi Ito

Tsutomu Nakanishi

Hitoshi Iwasaki

Masayuki Takagishi

Shuichi Murakami

Naoharu Shimomura

Hirofumi Morise

Yousuke Isowaki

Naoki Hase

Mutsumi Okajima

Masahiro Koike

Megumi Yakabe

Agung Setiadi

Yoshitaka Yamamoto

Akihito Yamamoto

Shigeyuki Hirayama

Shigeru Aomori

Tsutomo Nakanishi

A magnetic memory includes a plurality of cylindrical magnetic members each extending along a first direction and having a first end portion and a second end portion; and a magnetoresistive element that includes: a magnetization variable layer with a variable magnetization direction, a magnetization fixed layer with a fixed magnetization direction, and a non-magnetic layer between the magnetization variable layer and the magnetization fixed layer. When viewed in the first direction, the magnetoresistive element overlaps a part of the first end portion of one of the magnetic members. The magnetization direction of the magnetization variable layer intersects with the magnetization direction of the magnetization fixed layer at an angle larger than 0 degrees and smaller than 180 degrees.

Magnetic memory

A magnetic memory includes first magnetic members extending along a first direction. First and second wirings are spaced apart from the first magnetic members on a second end side of the first magnetic members. At least one of the first magnetic members is between the first and second wirings in a plan view from the first direction. A second magnetic member has a first portion facing the first wiring and electrically connected to a first magnetic member on one side and a second portion facing the first wiring on an opposite side. The second portion is electrically connected to another first magnetic member. A control circuit causes a current to flow through one of the first wiring or the second wiring when data is written into the first magnetic member that is between the first wiring and the second wiring.

A memory includes: a magnet including a first and second portions adjacent in a first direction. The first portion has a first dimension in a second direction at a first position at which a dimension of the magnet in the second direction is maximum, the second direction perpendicular to the first direction, the second portion has a second dimension in the second direction at a second position at which a dimension of the magnet in the second direction is minimum, the second dimension smaller than the first dimension, the first portion is continuous to the second portion via a third position between the first and second positions, a curve corresponding to an outer of the magnet extends between the first and third positions, and the curve passes through a side closer to the central axis of the magnet than a straight line connecting the first and second positions.

A magnetic memory includes: a first and second wirings; an insulator portion; a magnetic member including: a first portion electrically connected to the first wiring; a second portion electrically connected to the second wiring; and a third portion disposed between the first and second portions, the magnetic member extending in a first direction from the first portion toward the second portion and surrounding the insulator portion, and in a cross-section parallel to the first direction and including part of the magnetic member and part of the insulator portion, a curvature of the first portion being smaller than a curvature of the third portion, a length of the first portion in the first direction being greater than half a length of the third portion in the first direction; and a control circuit electrically connected to the first and second wirings.

A storage device includes: a memory unit and a first pillar. The first pillar includes: a first region having a third portion between a first and a second portion respectively having a first and a second maximum diameter, and having a first minimum diameter, the first and second portions defining a first distance; a second region having a sixth portion between a fourth and a fifth portion respectively having a third and a fourth maximum diameter, and having a second minimum diameter, the fourth and fifth portions defining a second distance; and a third region between the first and second regions, having a ninth portion between a seventh and an eighth portion respectively having a fifth and a sixth maximum diameter, and having a third minimum diameter, the seventh and eighth portions defining a third distance shorter than each of the first and second distances.

Storage device and method for manufacturing storage device

A magnetic memory of the present embodiment includes an electrode extending along a plane including a first direction and a second direction, a first wiring extending in the first direction, second wirings between the electrode and the first wiring, extending in the second direction and arranged in the first direction, first magnetic members each including a first part electrically connected to the first wiring and a second part electrically connected to the electrode, extending in a third direction, and being positioned between neighboring two of the second wirings when seen from the third direction, and a control circuit. When writing first information to one first magnetic member, the control circuit supplies first current to at least two second wirings positioned on one side of the one first magnetic member in the first direction.

A magnetic memory according to an embodiment includes: a magnetic member including a first to third magnetic parts, the first magnetic part including a first portion and a second portion and extending in a first direction from the first portion to the second portion, the second magnetic part extending in a second direction that crosses the first direction, and the third magnetic part connecting the second magnetic part and the first portion; a first nonmagnetic metal layer arranged along the third magnetic part, the first nonmagnetic metal layer including a first end portion on a side of the second portion, a position of the first end portion along the first direction being between positions of the first and second portions along the first direction; and a first and second electrodes supplying a current between the first and second magnetic parts via the third magnetic part.

According to one embodiment, a magnetic memory includes a magnetic body with two portions of a first dimension in a first direction which are spaced from each other a second direction and another portion that has a second dimension less than the first dimension in the first direction, which is between the two other portions. A circuit supplies a shift pulse to the magnetic body. The shift pulse includes a first pulse and a second pulse and moves a domain wall in the magnetic body along the second direction. The first pulse has a first pulse width. The second pulse has a second pulse width less than the first pulse width. The second pulse is supplied to the magnetic body after the first pulse.

Magnetic memory with circuit to supply shift pulse to move a domain wall in a magnetic body

A magnetic storage device of an embodiment includes: a first magnetic part including a first portion and a second portion and extending in a first direction from the first portion to the second portion; a layered part which is stacked on the first magnetic part in a second direction intersecting with the first direction; a first electrode electrically connected with the first portion; and a second electrode electrically connected with the second portion. The layered part includes a first layer and a second layer which is disposed between the first layer and the first magnetic part, the second layer includes a metal oxide, and the first layer includes at least one selected from the group consisting of a metal nitride and a metal carbide.

Magnetic storage device

According to one embodiment, a magnetic memory device includes a first memory portion, a first conductive portion, a first interconnection, and a controller. The first memory portion includes a first magnetic portion including a first portion and a second portion, a first magnetic layer, and a first nonmagnetic layer provided between the second portion and the first magnetic layer. The first conductive portion is electrically connected to the first portion. The first interconnection is electrically connected to the first magnetic layer. The controller is electrically connected to the first conductive portion and the first interconnection. The controller applies a first pulse having a first pulse height and a first pulse length between the first conductive portion and the first interconnection in a first write operation and applies a second pulse having a second pulse height and a second pulse length in a first shift operation.

Magnetic memory device

According to one embodiment, a magnetic memory device includes a first magnetic portion extending in a first direction, a first magnetic layer, and a first nonmagnetic layer provided between the first magnetic layer and a portion of the first magnetic portion. The first magnetic portion has a first surface. The first surface includes bottom portions, and top portions. The bottom portions and the top portions are arranged alternately in the first direction. The bottom portions include a first bottom portion, a second bottom portion adjacent to the first bottom portion in the first direction, a third bottom portion, and a fourth bottom portion adjacent to the third bottom portion in the first direction. The top portions include a first top portion provided between the first bottom portion and the second bottom portion, and a second top portion provided between the third bottom portion and the fourth bottom portion.

Magnetic memory device and method for manufacturing the same

According to one embodiment, a magnetic memory device includes a first magnetic portion, a first electrode, a second electrode, a third electrode, a second magnetic portion, a first nonmagnetic portion, and a controller. The first magnetic portion includes an extension portion and a third portion. The extension portion includes a first portion and a second portion. The third portion is connected to the second portion. The first electrode is electrically connected to the first portion. At least a portion of the third portion is positioned between the second electrode and the third electrode. The second magnetic portion is provided between the second electrode and the at least a portion of the third portion. The first nonmagnetic portion is provided between the second magnetic portion and the at least a portion of the third portion. The controller is electrically connected to the first, second electrode, and third electrodes.

According to one embodiment, a magnetic memory device includes a first interconnect, a second interconnect, a first memory portion, and a controller. The first memory portion is provided between the first and second interconnects. The controller is electrically connected with the first and second interconnects. The first memory portion includes a first magnetic member, a first magnetic element, and a first non-linear element. The first magnetic element is provided between the first magnetic member and the second interconnect in a first current path between the first and second interconnects. The first non-linear element is provided between the first magnetic element and the second interconnect in the first current path. The controller is configured to supply a first shift current in the first current path in a first shift operation. The controller is configured to supply a first reading current in the first current path in a first reading operation.

According to one embodiment, a magnetic element includes a first member and a first magnetic portion. The first member includes a first region, a second region, and a third region positioned between the first region and the second region in a first direction. The first region includes at least one first element selected from the group consisting of Au, Ir, Al, Ta, TaN, W, Hf, Pt, and Pd. The second region includes at least one second element selected from the group. The third region includes at least one third element selected from the group. A concentration of the third element in the third region is lower than a concentration of the first element in the first region and lower than a concentration of the second element in the second region. A direction from the first region toward the first magnetic portion is aligned with a second direction.

Magnetic element and magnetic memory

According to one embodiment, a magnetic memory device includes a first magnetic member, a first electrode, a first magnetic layer, a first non-magnetic layer, a first conductive layer and a controller. The first magnetic member includes a first extending portion and a third magnetic portion. The first extending portion includes first and second magnetic portions. The third magnetic portion is connected with the second magnetic portion. The first electrode is electrically connected with the first magnetic portion. The first non-magnetic layer is provided between the first magnetic layer and at least a part of the third magnetic portion. The first conductive layer includes first and second conductive portions, and a third conductive portion being between the first conductive portion and the second conductive portion. The controller is electrically connected with the first electrode, the first magnetic layer, the first conductive portion and the second conductive portion.

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Kamakura Kanagawa, Japan

Masaki Kado