Fujitsu Corporation

Masaki Ito

Takaaki Furuyama

Masaya Katayama

Shozo Kawabata

Hideo Onodera

Shigeru Iwamoto

The semiconductor device comprises a first wellof a first conduction type formed in a semiconductor substrate; a second wellof a second conduction type formed in the first well; and a transistorincluding a control gateformed of an impurity region of the first conduction type formed in the second well, a first impurity diffused layerand a second impurity diffused layerformed with a channel regiontherebetween, and a floating gate electrodeformed on the channel regionand the control gatewith a gate insulation filmtherebetween. The control gateis buried in the semiconductor substrate, which makes it unnecessary to form the control gateon the floating gate electrode. Thus, the memory transistor and the other transistors, etc. can be formed by the same fabricating process. Thus, the fabrication processes can be less and the semiconductor device can be inexpensive.

Method for fabricating a semiconductor device

Capacitance sensor electrodes are arranged in a form of matrix on a semiconductor substrate and coated with a cover film. These capacitance sensor electrodes are connected to a drive circuit. ESD electrodes are arranged in the vicinities of corner portions of the capacitance sensor electrodes. Each ESD electrode is composed of a film containing, for example, aluminum excellent in conductivity and a TiN film formed thereon. The ESD electrodes are grounded through the semiconductor substrate. On each ESD electrode, a plurality of fine ESD holes reaching the ESD electrode from a surface of the cover film are formed.

Capacitance detection type sensor and manufacturing method thereof

Semiconductor device comprising transistors having control gates and floating gate electrodes

Growing community of inventors

Kawasaki, Japan

Masaki Ito