Screen Holdings Co., Ltd.

Sanyo Chemical Industries, Ltd.

Masaki Inaba

Koichi Saito

Masayuki Otsuji

Ayumi Higuchi

Kei Suzuki

Yasuhiro Tsudo

Takanori Yamamoto

Hideaki Saito

Linh Da Ho

Yuya Akanishi

Akihisa Iwasaki

Kota Sotoku

Shinji Watanabe

Kazuki Nishihara

Yasutoshi Okuno

Naoko Arima

Yuko Matsumoto

Jun Takeuchi

Eiji Umeda

A substrate processing method for removing an organic film on a substrate includes a) carrying out introduction of ozone-containing gas into a substrate processing chamber to fill at least a space above the substrate in the substrate processing chamber with ozone-containing gas, b) starting spraying through the space a heated chemical liquid containing sulfuric acid onto the substrate after the a), c) continuing the spraying started in the b), and d) stopping the spraying continued in the c).

Substrate processing method and substrate processing apparatus

In a substrate processing method, a silicon oxide film formed on a substrate is etched. The substrate processing method includes a first etching step and a second etching step. In the first etching step, the silicon oxide film is selectively etched against another film by supplying a hydrogen fluoride gas into a chamber in a state in which a pressure in the chamber is a first pressure lower than the atmospheric pressure. In the second etching step, the silicon oxide film is selectively etched against the another film by supplying the hydrogen fluoride gas into the chamber in a state in which the pressure in the chamber is a second pressure lower than the atmospheric pressure. The second pressure is lower than the first pressure.

A substrate processing method is provided, which includes: a sulfuric acid immersing step of immersing a plurality of substrates in a sulfuric acid-containing liquid within a sulfuric acid vessel; a transporting step of taking out the substrates from the sulfuric acid vessel and transporting the substrates to an ozone gas treatment unit; and an ozone exposing step of exposing the substrates transported to the ozone gas treatment unit to an ozone-containing gas. The ozone gas treatment unit may include a gas treatment chamber which accommodates the substrates. The ozone exposing step may include the step of placing the substrates taken out of the sulfuric acid vessel in a treatment space within the gas treatment chamber to expose the substrates to the ozone-containing gas.

The substrate processing method includes a liquid film forming step of forming a liquid film of a sulfuric acid-containing liquid on a principal surface of a substrate, an ozone-containing gas exposing step of filling an ozone-containing gas inside a processing chamber capable of housing the substrate to expose the liquid film to the ozone-containing gas, and a substrate heating step of heating the substrate in a state that the substrate is disposed inside the processing chamber which is filled with the ozone-containing gas and the liquid film is also formed on the principal surface of the substrate.

A semiconductor device forming method that includes a step for forming a coating layer and a step for performing etching. In the step for forming a coating layer, the coating layer is formed. The coating layer selectively covers a portion of a recess provided in a stacked structure supported by a base member. The portion of the recess is located on a front surface side of the recess. In the step for performing etching, a deep portion, which is deeper than the coating layer, of the recess is etched with a chemical liquid so as to widen a diameter of the deep portion.

Semiconductor device forming method and substrate processing apparatus

A substrate processing device is a device continuously performing wet processing and dry processing. The substrate processing device includes a plurality of processing modules. Each of the plurality of processing modules includes a single wet processing unit performing wet processing on a substrate; a single dry processing unit performing dry processing on a substrate; and a single transfer unit located between the wet processing unit and the dry processing unit to transfer a substrate between the wet processing unit and the dry processing unit.

Substrate processing device

A substrate processing method processes a substrate which has a metal layer on a principal surface. The substrate processing method includes a metal oxide layer forming step in which an oxidizing fluid is supplied toward the principal surface of the substrate, thereby forming a metal oxide layer constituted of one atomic layer or several atomic layers on a surface layer of the metal layer and a metal oxide layer removing step in which an etching fluid containing at least one of water in a gaseous state and water in a mist state as well as a reactive gas that reacts with the metal oxide layer together with the water is supplied toward the principal surface of the substrate, thereby etching the metal oxide layer and selectively removing it from the substrate. Then, cycle processing in which the metal oxide layer forming step and the metal oxide layer removing step are given as one cycle is executed at least in one cycle, thereby controlling the etching amount of the metal layer for each cycle at an accuracy of a nanometer or less.

A substrate processing method is provided for removing a resist having a hardened layer from a front surface of a substrate. The substrate processing method includes a hardened-layer removing step and a wet processing step. The hardened-layer removing step includes a heating step of heating the substrate to 150° C. or more and an ozone-gas supplying step of supplying an ozone gas to the front surface of the substrate being heated by the heating step, and the hardened-layer removing step removes the hardened layer by generating an oxygen radical near the front surface of the substrate. The wet processing step removes the resist from the front surface of the substrate by supplying a processing liquid including a sulfuric acid to the front surface of the substrate after the hardened-layer removing step.

A hot plate of a resist removing apparatus is disposed in a processing space and heated to a predetermined temperature. A substrate has on an upper surface thereof, a pattern of a resist having a surface on which an altered layer is formed. A moving mechanism moves a plurality of lift pins relative to a hot plate. An upper surface of the substrate is supplied with ozone gas. A control part disposes the substrate at a first processing position with a clearance from the hot plate and removes the altered layer by using the ozone gas, and subsequently controls the moving mechanism to dispose the substrate at a second processing position with a clearance smaller than that between the first processing position and the hot plate and removes the resist by using the ozone gas. It is thereby possible to efficiently remove the resist from the substrate while preventing popping.

Resist removing method and resist removing apparatus

The present invention is urethane resin particles (C) for slush mold which contain a urethane resin (D) and an additive (N), wherein the particles have a shape factor SF1 of 101 to 200, a shape factor SF2 of 120 to 240, and a central particle diameter of 20 to 500 &#x3bc;m. It is preferred that the urethane resin (D) has a concentration of urea groups of 0.5 to 10% by weight, a total of the concentration of urethane groups and that of the urea groups of 4 to 20% by weight, a melting point of 160 to 260&#xb0; C. and a glass transition temperature of &#x2212;65 to 0&#xb0; C.

Process for producing urethane resin particles for slush molding

Provided is a slush molding material which exhibits excellent low-temperature meltability and heat resistance and which can yield a molded product having excellent tensile strength and elongation. The present invention is urethane resin particles (D) comprising a urethane or urethane-urea resin (U) that has residues (j) bonded thereto covalently, said residues (j) being residues derived from an at least trivalent aromatic polycarboxylic acid by removing hydroxyl groups, or urethane resin particles (D) comprising a urethane resin composition (S) which comprises both a urethane or urethane-urea resin (U) and a compound (E) that has a residue (j) derived from an at least trivalent aromatic polycarboxylic acid by removing hydroxyl groups, said compound (E) being represented by general formula (1), wherein the residues (j) are linked respectively to urethane or urea groups (u) of the resin (U) or (U) by hydrogen bonds.

Urethane resin particles

Provided are urethane resin particles for slush molding which make it possible that inconveniences based on the slip-down of a pigment, on the aggregation of particles of the pigment, and on other causes are removed although this coloring is coloring onto the resin particle surfaces. The present invention is urethane resin particles for slush mold which contain a urethane resin and an additive, wherein the particles have a shape factor SFof 101 to 200, a shape factor SFof 120 to 240, and a central particle diameter of 20 to 500 &#x3bc;m. It is preferred that the urethane resin has a concentration of urea groups of 0.5 to 10% by weight, a total of the concentration of urethane groups and that of the urea groups of 4 to 20% by weight, a melting point of 160 to 260&#xb0; C. and a glass transition temperature of &#x2212;65 to 0&#xb0; C.

Growing community of inventors

Kyoto, Japan

Masaki Inaba