Tokyo Electron Limited

Other

Tohoku University

Tadahiro Ohmi

Canon Kabushiki Kaisha

Sharp Kabushiki Kaisha Corporation

Foundation for Advancement of International Science

Asm IP Holding B.v.

Sumitomo Osaka Cement Co., Ltd.

Organo Corporation

Hitachi, Ltd.

Hitachi Plant Engineering Construction Co., Ltd.

Future Vision Inc.

Ohmi; Tadahiro

Goto, Naohisa

Masaki Hirayama

Shigetoshi Sugawa

Nobuyoshi Tanaka

Tetsuya Goto

Tatsushi Yamamoto

Takamitsu Tadera

Yasuyuki Shirai

Toshikuni Shinohara

Haruyuki Takano

Taro Ikeda

Satoru Kawakami

Nobumasa Suzuki

Hiroshi Ohsawa

Takahisa Nitta

Kazuhide Ino

Yusuke Hirayama

Takahiro Horiguchi

Ryu Kaiwara

Naoko Yamamoto

Hiroshi Morita

Hiroshi Osawa

Takashi Imaoka

Tetsuro Itagaki

Norio Kanetsuki

Isamu Sugiyama

Masaya Okamoto

Hiroyuki Yamamoto

Masayuki Kitamura

Hiroshi Suzuki

Hirokazu Suzuki

Naoto Tsuji

Takaaki Matsuoka

Sumi Tanaka

Yoshio Yamazaki

Takeshi Honma

Shinsuke Oka

Masafumi Kinoshita

Naohisa Goto

Hirofumi Inomata

Masafumi Kitano

Toshiaki Hongoh

Tetsu Osawa

Kazuaki Nishimura

Shigemi Murakawa

Hiroaki Konoura

Toshiaki Hongo

Hisayuki Shimada

Ryouichi Tanaka

Yoshinori Ohkubo

Hiroshi Kondo

Akihiko Hiroe

Hideo Hanaoka

Kohei Watanuki

I'atsushi Yamamoto

I'adahiro Ohmi

Yasuyukil Shirai

Goushu Tei

Mitsuo Kato

Masaki Sugiyama

In an example of an embodiment, a plasma processing apparatus includes a processing container, a stage, an upper electrode, an inlet, and a waveguide device. The stage is provided within the processing container. The upper electrode is provided above the stage, to interpose a space within the processing container. The inlet is configured to introduce high-frequency waves. The high-frequency waves are VHF waves or UHF waves. The inlet is provided at an end of the space in the lateral direction, and extends in a circumferential direction around a central axis of the processing container. The waveguide device is configured to supply high-frequency waves to the inlet. The waveguide device includes a resonator that provides a waveguide. The waveguide of the resonator extends in the circumferential direction around the central axis and extends in the direction in which the central axis extends to be connected to the inlet.

Plasma processing apparatus and plasma processing method

A plasma processing apparatus includes a temperature regulator, which includes a plurality of fans and provides a flow path, wherein the flow path is axially or rotationally symmetrical with respect to a central axis and includes a first partial flow path and a second partial flow path, and wherein the first partial flow path extends along an upper surface of an excitation electrode, and the second partial flow path extends alternately in opposite directions between the plurality of fans and the first partial flow path.

Plasma processing apparatus

In a plasma processing apparatus and a plasma processing method, improvement of the in-plane uniformity of plasma on a stage is required. The plasma processing apparatus includes a processing container, a stage, and a dielectric plate. The stage is provided within the processing container, the dielectric plate includes a plurality of through-holes for gas injection, and an upper surface of the dielectric plate is provided with a conductive film. A space between the conductive film and the stage within the processing container is used as a plasma processing space. The dielectric plate has a central portion and an outer peripheral portion, upper surfaces of the central portion and the outer peripheral portion include flat portions, and the central portion is larger in thickness than the outer peripheral portion.

A plasma processing apparatus includes: a chamber having a processing space therein; a substrate support provided inside the processing space; an upper electrode provided above the substrate support with the processing space interposed therebetween; an emitter provided to emit electromagnetic waves into a plasma generation space and extending in a circumferential direction around a central axis of the chamber and the processing space; and a waveguide configured to supply the electromagnetic waves to the emitter; wherein the waveguide includes a resonator having a waveguide path therein, wherein the resonator includes a first short-circuiting portion constituting a first end of the waveguide path and a second short-circuiting portion constituting a second end of the waveguide path, wherein the second end of the waveguide path is electromagnetically coupled to the emitter, and wherein the second short-circuiting portion has a capacitance that short-circuits the waveguide path at a frequency of the electromagnetic waves.

An electrostatic chuck device includes: an electrostatic chuck plate having a dielectric substrate having a placement surface on which a wafer is placed and an adsorption electrode positioned in the dielectric substrate; a metal base supporting the electrostatic chuck plate from a back surface side opposite to the placement surface; and a focus ring installed on an outer peripheral portion of the electrostatic chuck plate and surrounding the placement surface. The electrostatic chuck plate has a ring adsorption region which is adsorbed to the focus ring and is located on a surface positioned on the same side as the placement surface and has a base adsorption region which is adsorbed to the metal base and located on a back surface opposite to the placement surface.

Electrostatic chuck device

A wafer support device includes a dielectric substrate and an RF electrode provided in the dielectric substrate. The RF electrode is divided into a plurality of zone electrodes arranged in a planar direction of the dielectric substrate. The wafer support device has: a short-circuit member interconnecting the plurality of zone electrodes; and a main power supply rod connected to the short-circuit member from a back side of the dielectric substrate.

Wafer support device

A plasma processing apparatus according to an exemplary embodiment includes a processing container, a stage, an upper electrode, a shower plate, and a waveguide, wherein the stage is provided inside the processing container, the shower plate is provided above the stage with a space in the processing container interposed between the shower plate and the stage, the upper electrode is provided above the shower plate, the waveguide includes an end portion and guides radio-frequency waves in a VHF band or a UHF band therethrough, the end portion is disposed to face the space, and emits the radio-frequency waves to the space, the shower plate includes a plurality of pillars and is made of a dielectric material, gaps are provided inside the shower plate, and the plurality of pillars are disposed in the gaps, respectively.

In a shower plate, a plasma processing apparatus, and a plasma processing method, improvement of in-plane uniformity of plasma on a stage is required. The shower plate according to an exemplary embodiment includes an upper dielectric disposed to face a stage and an upper electrode embedded in the upper dielectric. A distance between a bottom surface of the upper dielectric and the upper electrode is shorter in a peripheral portion than in a central portion.

Shower plate, plasma processing apparatus and plasma processing method

A plasma-processing apparatus includes a processing container, a stage provided within the processing container, an upper electrode provided above a front surface of the stage, with a space within the processing container interposed therebetween, a waveguide configured to introduce radio-frequency waves in a VHF/UHF band into the space, and a conductive part extending between the outer peripheral portion of the stage and a side wall of the processing container. The stage includes a metal layer. Its outer peripheral portion includes a part of the metal layer. The waveguide includes an end portion from which radio-frequency waves are emitted. The end portion is disposed to face the space. The side wall is grounded. The conductive part is electrically connected to the metal layer and the side wall while extending from the outer peripheral portion toward the side wall so that the radio-frequency waves are introduced into the space.

A plasma processing apparatus capable of improving the in-plane uniformity of plasma and a lower stage used for the plasma processing apparatus are anticipated. In an exemplary embodiment, the lower stage is for a lower stage that generates plasma with an upper electrode. The lower stage includes: a lower dielectric body formed of ceramic, a lower electrode embedded in the lower dielectric body, and a heating element embedded in the lower dielectric body. The separation distance between the top surface of the lower dielectric body at the outer edge position thereof and the lower electrode is smaller than the separation distance between the top surface of the lower dielectric body in the central region thereof and the lower electrode. The lower electrode has an inclination region inclined with respect to the top surface between the outer edge position and the central region.

Plasma processing apparatus and lower stage

The plasma processing apparatus according to an exemplary embodiment includes a processing container, a stage, an upper electrode, a dielectric plate, and a waveguide. The stage is provided in the processing container. The dielectric plate is provided above the stage with a space in the processing container interposed therebetween. The upper electrode is provided above the dielectric plate. The waveguide has an end and guides high frequency waves in a VHF band or a UHF band. The end is arranged to face the space to radiate high frequency waves to the space. The dielectric plate includes a conductive film. The conductive film is provided on an upper surface of the dielectric plate. The upper surface faces the upper electrode. The conductive film is electrically connected to the upper electrode.

A plasma processing apparatus according to an exemplary embodiment includes a processing container, a stage, a dielectric plate, an upper electrode, an introduction part, a driving shaft, and an actuator. The stage is provided in the processing container. The dielectric plate is provided above the stage via a space in the processing container. The upper electrode has flexibility, is provided above the dielectric plate, and provides a gap between the dielectric plate and the upper electrode. The introduction part is an introduction part of radio frequency waves that are VHF waves or UHF waves, is provided at a horizontal end portion of the space. The driving shaft is coupled to the upper electrode on a central axial line of the processing container. The actuator is configured to move the driving shaft in a vertical direction.

Provided is an information linkage system, comprising: a processor; and a storage device coupled to the processor, the storage device holds identification information of a user and information on the user, which are added by a first organization, in association with each other, the processor: transmits to a second organization an information linkage application regarding information on any one item included in the information on the user; acquires, when the information linkage application is received, identification information of the user and information on the user of the item specified by the information linkage application, which are added by the second organization; and stores the acquired information in the storage device in association with the identification information of the user and the information on the user regarding the same user as a user identified by the acquired identification information, which are added by the first organization.

Information linkage system and information linkage method

A plasma treatment device includes: a chamber body including a chamber defined therein; a gas supply part that supplies a processing gas into the chamber; a stage disposed within the chamber; an upper electrode having a circular surface that faces the stage; a conductor connected to the upper electrode; a high-frequency power supply that generates a first high-frequency wave; a bias power supply that applies a second high-frequency wave or a direct current bias voltage to the upper electrode; an annular insulating ring extending along an outer edge of the circular surface; a waveguide through which electromagnetic waves generated around the conductor based on the first high-frequency wave propagate, the waveguide being connected to the annular insulating ring outside the upper electrode; and a controller that controls the second high-frequency wave or the direct current bias voltage to be applied to the upper electrode.

Plasma treatment device

A substrate processing apparatus includes a chamber, a manifold including a tubular portion above the chamber, first and second introduction pipes provided on a side surface of the tubular portion, and a gas guide portion to guide, in a direction opposite the chamber, gases introduced from the first and second introduction pipes into the tubular portion, and then introduce the gases into the chamber. The gas guide portion does not contact a top of the manifold, and the manifold includes a space above the gas guide portion to allow the gases to flow from between the gas guide portion and the tubular portion into a space surrounded by the gas guide portion. The gas guide portion advantageously enables the gases to broadly diffuse and uniformly mix, increasing the quality of a film formed on a substrate inside the chamber.

Substrate processing apparatus having a gas-mixing manifold

Growing community of inventors

Sendai, Japan

Masaki Hirayama