Toyoda Gosei Co., Ltd.

Masaki Hashimura

Toshiya Uemura

Naohisa Nagasaka

Masanobu Senda

Tetsu Kachi

Koichi Ota

Atsuo Hirano

Hideki Omoya

Takao Sato

Hiroshi Tadano

Hideki Hosokawa

Shigeki Konishi

A plurality of Group III nitride compound semiconductor layers are formed on a substrate for performing the formation of elements and the formation of electrodes. The Group III nitride compound semiconductor layers on parting lines are removed by etching or dicing due to a dicer so that only an electrode-forming layer on a side near the substrate remains or no Group III nitride compound semiconductor layer remains on the parting lines. A protective film is formed on the whole front surface. Separation grooves are formed in the front surface of the substrate by laser beam irradiation. The protective film is removed together with reaction products produced by the laser beam irradiation. The rear surface of the substrateis polished to reduce the thickness of the substrate. Then, rear grooves corresponding to the latticed frame-shaped parting lines are formed in the rear surface of the substrate. The substrate is divided into individual elements along the parting lines.

Semiconductor element and method for producing the same

In a flip chip type Group III nitride compound semiconductor light-emitting element, a surface of a substrate serving as a light-emitting surface is formed as a rough surface so that radiated light is scattered by the surface.

Group III nitride compound semiconductor light-emitting element

A method for dividing a semiconductor wafer into chips according to the present invention is a method for dividing a semiconductor wafer into a large number of semiconductor chips, the semiconductor wafer having a semiconductor layer formed on a substrate. A first method includes the step of forming a blast-resistant mask on a surface of the semiconductor wafer, the blast-resistant mask having a pattern for leaving a grid-like exposed portion as it is and the step of blasting a fine particular blast material to thereby form dividing grooves reaching a predetermined depth of the substrate in the grid-like exposed portion. A second method includes the step of forming first dividing grooves in a surface of the semiconductor wafer in which the semiconductor layer is formed, by dicing, etching or blasting, so that the first dividing grooves have a relatively narrow groove width, and the step of forming second dividing grooves in a surface of the semiconductor wafer in which the semiconductor layer is not formed by dicing, and in positions corresponding to the first dividing grooves, so that the second dividing grooves have a relatively wide groove width.

Method for dicing semiconductor wafer into chips

A process of forming separation grooves for separating a semiconductor wafer into individual light-emitting devices, a process for thinning the substrate, process for adhering the wafer to the adhesive sheet to expose a substrate surface on the reverse or backside of the wafer, a scribing process for forming split lines in the substrate for dividing the wafer into light-emitting devices, and a process of forming a mirror structure comprising a light transmission layer, a reflective layer, and a corrosion-resistant layer, which are laminated in sequence using sputtering or deposition processes. Because the light transmission layer is laminated on the adhesive sheet, gases normally volatilized from the adhesion materials are sealed and do not chemically combine with the metal being deposited as the reflective layer. As a result, reflectivity of the reflective layer can be maintained.

Light-emitting device using a group III nitride compound semiconductor and a method of manufacture

A Group III nitride compound semiconductor light-emitting element has a reflecting surface on a side opposite to a main light-emitting surface of the element viewed from a light-emitting layer. The reflecting surface is inclined to surfaces of growth of semiconductor layers. Light emitted from the light-emitting layer is reflected by the reflecting surface, so that the reflected light emerges from side surfaces of the light-emitting element to the outside without passing through the semiconductor layers (particularly, the light-emitting layer).

Growing community of inventors

Aichi, Japan

Masaki Hashimura