Sony Corporation

Mitsubishi Denki Kabushiki Kaisha

Masaki Hara

Naoki Sano

Toshiyuki Sameshima

Setsuo Usui

Masaharu Sawatani

Kazuhito Hori

Takuya Makino

Kazuhiro Hane

Sadao Shiratani

Dharam Pal Gosain

Masayuki Sakai

Masataka Fukunaga

Mitsunobu Sekiya

Naoto Kojima

Hiroto Ido

Katsuo Fukuyama

Minoru Kato

Minoru Sasaki

Yasuhiro Kanaya

Yuriko Kaino

Kenichi Kurihara

Jonathan Westwater

Midori Yonezawa

Takahiro Kamei

Hidenori Watanabe

Hirotaka Akao

Koji Ishioka

Toshiya Yoshida

Michihisa Yano

Katsunori Takagi

Masato Goto

Naoto Katoh

Atsushi Kono

Gosain D Pal

Atsushi Kohno

A film deposition method includes the steps of: coating a solution containing a polysilane compound on a substrate to form a coating film and then carrying out a first thermal treatment in an inert atmosphere, thereby forming the coating film into a silicon film; forming a coating film containing a polysilane compound on the silicon film and then carrying out a second thermal treatment in an inert atmosphere or a reducing atmosphere, thereby forming the coating film into a silicon oxide precursor film; and carrying out a third thermal treatment in an oxidizing atmosphere, thereby forming the silicon oxide precursor film into a silicon oxide film and simultaneously densifying the silicon film.

Film deposition method and manufacturing method of semiconductor device

The hinge () should preferably be formed to have a higher resistance than ever against the pivoting of the mirror body () to effectively prevent the hinge () from being damaged. By adopting a suitable one of a variety of production steps as necessary, the hinge () can be formed more finely and with a higher precision and thus the micro mirror unit can be produced more easily in a shorter time. To this end, the hinge () is formed from a different material, such as SiN, from the mirror substrate material from which the frame () and mirror body () are formed.

Micro mirror unit, optical disc drive using same, and method for producing micro mirror unit

A micro-mirror for deflecting an incident light is disclosed, wherein the micro-mirror comprises: a mirror section for reflecting an incident light issued from a laser diode; a hinge section including a fixed section and a movable section each having a flat surface; and a drive section having a bi-morph structure made of two or more of materials having different heat expansion coefficient for deflecting said mirror section to change relative angle to said incident light.

Micro-mirror and a method for fabricating the same

A heat transport device includes an evaporator, a condenser, and a vapor channel and a plurality of liquid channels that connect the evaporator and the condenser. The evaporator generates a capillary force to circulate working fluid. This structure prevents the performance deterioration and malfunction due to the entry of vapor-phase working fluid into the liquid channels. Since the cross-sectional areas of the liquid channels gradually decrease from the condenser toward the evaporator, the capillary force at the liquid channels can be increased, and vapor-phase working fluid is prevented from entering the liquid channels. Wicks and the portions of the liquid channels adjacent thereto are filled with liquid-phase working fluid even after dryout occurs, stable operation is achieved.

Heat transport device and electronic device

When a through hole like a pass-through trench is to be made by etching an object to be etched from one of its major surfaces by reactive ion etching or other dry etching, for the purpose of preventing undesirable enlargement of the through hole in size at its terminal end, dry etching is conducted by previously providing a conductor with a higher electric conductivity than the entity in contact with the other surface of the entity in or near the portion for making the through hole. For example, the entity to be etched may be a semiconductor such as Si substrate, and the conductor may be a metal film such as Al film.

Etching method and manufacturing method of a structure

In fabricating bonded substrate structures having a device-housing space therein, microstructures in the bonded substrates are prevented from being broken or damaged, and the yield of the bonded substrate structures fabricated is increased. A through-groove capable of connecting the device-housing space to the outside is formed in the bonded surface of one substrate. Thus configured, the atmosphere inside the device-housing space is kept the same as the outside atmosphere while openings that reach the device-housing space are formed through the bonded substrate structure by etching the structure, and the device-housing space is prevented from being subjected to any rapid pressure change in the process of forming the openings. The depth of the through-groove may be the same as that of the recess for the device-housing space. Thus configured, the through-groove may be formed in one and the same etching treatment for forming the device-housing space. The through-groove may be partly sealed with a Pb bump or the like, and the atmosphere inside the device-housing space can be insulated from the outside atmosphere in any stage of processing the bonded substrate structure.

Bonded substrate structures and method for fabricating bonded substrate structures

In a micro mirror apparatus pivoting on a hinge part as its axis, a movable part connected to a stationary part through the hinge part enhances exclusively the flexural rigidity of the hinge part without causing any significant change in the torsional rigidity of the hinge part and thus widens servo band. To this end, on at least a part of the hinge part , a protrusion protruding in the direction of its thickness is formed. This greatly increases the flexural rigidity of the hinge part and widens the servo band.

Micro mirror apparatus and optical memory disk apparatus

To provide a small and lightweight optical switching element with a simple structure capable of fast response, and an optical switching apparatus employing the optical switching element. Optical extraction unit contacts an upper substrate with electrostatic attraction generated between a transparent electrode of the optical extraction unit and a transparent electrode of the upper substrate. In the case that light enters one V-shaped trench of the upper substrate vertically, the light enters the optical extraction unit of the upper substrate and is emitted from a back of the optical extraction unit (a tapered unit). Subsequently, the incident light P passes through a lower substrate and is converted into transmission light. With electrostatic attraction generated between a transparent electrode of the lower substrate and a transparent electrode of the optical extraction unit, the optical extraction unit is attracted to a lower substrate side. In this state, the incident light is caused the total reflection at a total reflection face. This total reflection light is emitted from the other V-shaped trench. The incident light can be switched in two ways: the transmission light and the total reflection light.

Optical switching element, switching apparatus and image display apparatus using optical switching element

A target semiconductor device can be obtained stably by reforming an insulating film and a semiconductor. In a process of manufacturing a semiconductor device, at least one of the semiconductor and the insulating film is reformed after an annealing process for annealing the semiconductor at a temperature ranging from 20 to 400&deg; C. in the atmosphere containing a gas of water (H O) with a partial pressure from 1 Torr to a saturated vapor pressure for an annealing time ranging from 15 seconds to 20 hours.

Process of manufacturing semiconductor device

A multilayer resist structure is irradiated more than one time with ultraviolet rays through a photomask. Each time the structure is irradiated, ultraviolet rays of a little greater quantity of light than those used in the last irradiation are used. Also, with each exposure, a photomask which has a larger lightproof section than that used in the last irradiation is used. Next, the multilayer resist structure is developed, and the exposed area of each photoresist is removed with a developing solution. Also, in amorphous silicon layers, the areas under the removed photoresist are easily removed with the developing solution. A resist structure having desired steps is thus completed. Using the resist structure, a three-dimensional microstructure can be formed.

Multilayer resist structure, and method of manufacturing three-dimensional microstructure with use thereof

Growing community of inventors

Kanagawa, Japan

Masaki Hara