Fujitsu Semiconductor Limited

Fujitsu Corporation

Masaki Haneda

Noriyoshi Shimizu

Michie Sunayama

Nobuyuki Ohtsuka

Yoshiyuki Nakao

Yuka Kase

Takahiro Tabira

Akiyoshi Hatada

Masanori Terahara

Takayuki Aoyama

Akira Katakami

Tamotsu Owada

Hiroshi Kudo

Kazuya Okubo

A semiconductor device includes a semiconductor substrate, an oxygen-containing insulating film disposed above the above-described semiconductor substrate, a concave portion disposed in the above-described insulating film, a copper-containing first film disposed on an inner wall of the above-described concave portion, a copper-containing second film disposed above the above-described first film and filled in the above-described concave portion, and a manganese-containing oxide layer disposed between the above-described first film and the above-described second film. Furthermore, a copper interconnection is formed on the above-described structure by an electroplating method and, subsequently, a short-time heat treatment is conducted at a temperature of 80&#xb0; C. to 120&#xb0; C.

Semiconductor device and method for manufacturing the same

A semiconductor device including a first insulation film including a first opening reaching a diffusion region of a transistor; a first barrier metal over the diffused region in the first opening; a first conduction layer formed over the first barrier metal in the first opening and formed of a first conductor; a second barrier metal formed over the first conduction layer in the first opening; a second conduction layer formed over the second barrier metal in the first opening and formed of a second conductor; a third barrier metal formed over the first gate electrode in the second opening; a fourth barrier metal formed in the second opening and contacting with the third barrier metal; and a third conduction layer formed of the second conductor contacting with the fourth barrier metal in the second opening.

Semiconductor transistor device with barrier interconnects

A semiconductor device includes a semiconductor substrate including a well having a first conductivity type defined by a device isolation region, a gate insulating film formed on the semiconductor substrate, a gate electrode formed on the gate insulating film and including a first side surface and a second side surface facing the first side surface, and a first side wall insulating film formed on the first side surface and a second side wall insulating film formed on the second side surface.

Semiconductor device and fabrication method

A semiconductor device includes a semiconductor substrate, a device region including first and second parts, first and second gate electrodes formed in the first and the second parts, first and second source regions, first and second drain regions, first, second, third, and fourth embedded isolation film regions formed under the first source, the first drain, the second source, and the second drain regions, respectively. Further, the first drain region and the second source region form a single diffusion region, the second and the third embedded isolation film regions form a single embedded isolation film region, an opening is formed in a part of the single diffusion region so as to extend to the second and the third embedded isolation film regions, and the opening is filled with an isolation film.

Semiconductor device and manufacturing method of the semiconductor device

A semiconductor device production method includes: forming an insulating film on a semiconductor substrate, forming a concave portion in the insulating film, forming a gate insulating film at bottom of the concave portion, the bottom being on the semiconductor substrate; covering an inner wall surface of the concave portion and a top face of the insulating film with a first gate electrode film that is made of an electrically conductive material containing a first metal; covering the first gate electrode film with a covering film of a material having a second melting point higher than a first melting point of the electrically conductive material, leaving part of the side face of the concave portion uncovered; and performing heat treatment following the covering film formation to allow the first gate electrode film to reflow.

Semiconductor device production method and semiconductor device

A semiconductor device production method includes: forming a gate insulating film on the p-type region of a semiconductor substrate; forming a first aluminum oxide film with an oxygen content lower than stoichiometric composition on the gate insulating film; forming a tantalum-nitrogen-containing film that contains tantalum and nitrogen on the first aluminum oxide film; forming an electrically conductive film on the tantalum-nitrogen-containing film; patterning the electrically conductive film to form a gate electrode; injecting n-type impurities into the p-type region using the gate electrode as a mask; and carrying out heat treatment after the formation of the tantalum-nitrogen-containing film.

Semiconductor device production method

Method of manufacturing a multilayer interconnection structure in a semiconductor device

A semiconductor device includes an insulating film including oxygen formed over a semiconductor substrate, a recess formed in the insulating film, a refractory metal film formed on the inner wall of the recess, a metal film including copper, manganese, and nitrogen formed on the refractory metal film, and a copper film formed on the metal film to fill in the recess.

Semiconductor device with reduced increase in copper film resistance

A semiconductor device fabrication method including the steps of: forming an interlayer insulating film on a substrate; forming an opening in the interlayer insulating film; forming an alloy layer containing manganese and copper to cover the inner surface of the opening; forming a first copper layer of a material containing primarily copper on the alloy layer to fill the opening; forming, on the first copper layer, a second copper layer of a material containing primarily copper and a higher concentration of oxygen, carbon or nitrogen than the first copper layer; heating the substrate on which the second copper layer has been formed; and removing the second copper layer.

Semiconductor device fabrication method

A process for producing a semiconductor device, comprising the wiring region forming step of forming a wiring region on a semiconductor substrate; the copper wiring layer forming step of forming a copper wiring layer on the formed wiring region by electrolytic plating technique, wherein the copper wiring layer is formed by passing a current of application pattern determined from the relationship between application pattern of current passed at electrolytic plating and impurity content characteristic in the formed copper wiring layer so that the impurity content in the formed copper wiring layer becomes desired one; and the wiring forming step of polishing the formed copper wiring layer into a wiring.

Semiconductor device manufacturing method

A semiconductor device has a first insulating film formed over a semiconductor substrate, a first opening formed in the first insulating film, a first manganese oxide film formed along an inner wall of the first opening, a first copper wiring embedded in the first opening, and a second manganese oxide film formed on the first copper wiring including carbon.

Semiconductor device and method of manufacturing the same

A technology for analyzing and evaluating of a change of impurity content distribution at the heat treatment of electrodeposited copper film. There is provided a method of evaluating a semiconductor device, comprising providing an electrodeposited copper film formed while causing the deposition current to transit between the first state of current density and the second state of current density so as to attain a desired impurity content distribution and carrying out analysis and evaluation of any impurity diffusion from a change of impurity content distribution in the electrodeposited copper film between before and after heat treatment.

Growing community of inventors

Kawasaki, Japan

Masaki Haneda