Mitsubishi Electric Corporation

Konica Minolta, Inc.

Konica-minolta Holdings, Inc.

Masaki Goto

Akihiko Takeda

Hiroyuki Yoshihara

Toru Kimura

Kazuaki Nakamura

Toshiyuki Matsumura

Kenichi Hayashi

Dai Nakajima

Kei Yamamoto

Kazuhiro Tada

Hodaka Rokubuichi

Kiyofumi Kitai

Takatoshi Suematsu

Yasuyuki Sanda

Haruna Tada

Shunji Masumori

Akihisa Fukumoto

Hideki Komori

Hayato Terada

A power semiconductor device includes a power module unit and a heat sink. An uneven portion is formed in a module base in the power module unit. The uneven portion includes a depression portion and a buffer depression portion. An uneven portion is formed in a heat sink base unit in the heat sink. The uneven portion and the uneven portion are fitted together by crimping so that the module base of the power module unit and a heat dissipation spreader of the heat sink are integrated. The buffer depression portion is left as a space.

Power semiconductor device and method of manufacturing the same, and power conversion device

An ink set includes four types of inks that are a yellow ink, a magenta ink, a cyan ink, and a black ink. Each of the four types of inks contains water and a colorant, and at least one of the four types of inks contains an ultraviolet absorber. When Abs (Y) represents the absorbance of the yellow ink, Abs (M) represents the absorbance of the magenta ink, Abs (C) represents the absorbance of the cyan ink, and Abs (K) represents the absorbance of the black ink with respect to light with a wavelength of 385 nm, the ratios of Abs (Y), Abs (M), and Abs (C) to Abs (K) satisfy predetermined conditions.

Ink set and image forming method

A power module includes: a resin mold; and a lead frame in which a first region is drawn out from a first surface of the resin mold, and a second region extending from the first region in a direction perpendicular to the first surface is sealed inside the resin mold. The first region is bent toward a second surface of the resin mold along the first surface, and the first surface has a shape in which a bending angle is larger than 90 degrees, in which the bending angle is an angle formed by two regions, in the lead frame, adjacent to each other with a bent portion formed by bending the first region interposed in between.

Power module

A power semiconductor apparatus includes a mold portion, a panel that is conductive and in a flat plate shape, and a plurality of fins. The mold portion includes a power semiconductor element and a base plate that are molded. An opening is formed in the panel into which the base plate is inserted. The plurality of fins is fixed in grooves of the base plate. The panel has a plurality of protrusions on side surfaces forming the opening. Each protrusion has a fifth surface a cross section of which has a shape that tapers down toward an end of the protrusion, the cross section being parallel to a plane extending in the Z direction and a direction in which the protrusion protrudes. The base plate has cover portions covering the fifth surfaces, and is plastically deformed to allow the panel to be fitted in the base plate to fill gaps.

Power semiconductor apparatus and method for manufacturing the same

The power module of the invention includes a power element, a metal base for dissipating heat from the power element, a lead frame electrically connected to electrodes of the power element, and a resin enclosure that encapsulates the power element so that one surface of the metal base and a part of the lead frame are exposed from the enclosure. The resin enclosure of the power module includes: a body portion in which the power element and a part of the lead frame are placed, and at a bottom surface of which the one surface of the metal base is exposed; and a rib portion which is placed on the bottom surface of the body portion so as to surround an outer periphery of the metal base, and is formed to protrude from the bottom surface of the body portion in a direction perpendicular to the bottom surface.

Power module, power semiconductor device and power module manufacturing method

A method for producing a transparent electrode includes a forming step, an applying step and an irradiating step. The forming step is a step of forming a conductive metal layer on a transparent resin substrate. The applying step is a step of applying a composition containing a conductive polymer and a nonconductive polymer over the transparent resin substrate and the conductive metal layer so as to form a conductive polymer layer. The irradiating step is a step of irradiating the conductive polymer layer with an infrared ray having a ratio of spectral radiance at a wavelength of 5.8 &#x3bc;m to spectral radiance at a wavelength of 3.0 &#x3bc;m of 5% or less.

Method for producing transparent electrode and organic EL element

A method for forming a transparent electrode includes a step of forming a thin metal wire on a transparent substrate; and a step of forming a transparent conductive layer on the transparent substrate and the thin metal wire. The step of forming the transparent conductive layer is a step of forming the transparent conductive layer by applying an application liquid onto the transparent substrate and the thin metal wire by printing. The application liquid is composed of a conductive polymer, a water-soluble binder having a structural unit represented by the following general formula (I), a polar solvent having a log P value of &#x2212;1.50 to &#x2212;0.45, and 5.0 to 25 mass % of a glycol ether. 

Method for manufacturing transparent electrode

An object is to provide a fin integrated type semiconductor device and a method of manufacturing the same, which are provided with a simple structure and good heat dissipation characteristics. The semiconductor device includes: a base plate on which fins arranged in a standing condition are formed on a first main face; an insulating layer formed on a second main face of the base plate, the second main face being opposite to the first main face of the base plate; a circuit pattern fixed to the insulating layer; and a semiconductor element joined to the circuit pattern. The fins are formed with slits that pass through in the thickness direction of the fins.

Semiconductor device and method of manufacturing the same

A radiator including: a plurality of radiation fins; and a radiation fin support base having a heater element mounted to one surface thereof and a plurality of parallel fin grooves to which the radiation fins are installed and a projection configured to fix the radiation fin formed to the other surface thereof, wherein a top of the projection pushes one side surface of the radiation fin to push the other side surface of the radiation fin toward a side surface of the fin groove, and wherein the fin groove and the projection are each divided in a plurality of pieces in a longitudinal direction of the fin groove, and each of the divided fin grooves and each of the divided projections have a same length in the longitudinal direction of the fin groove and are paired with each other.

Radiator and method of manufacturing radiator

The present invention can easily provide a method of manufacturing a pattern electrode with excellent electroconductivity and excellent transparency and a pattern electrode manufactured according to the method. The method of manufacturing a pattern electrode is characterized in that it comprises the steps of forming on a substrate an electroconductive layer containing metal nanowires, and carrying out pattern printing on the electroconductive layer employing a metal nanowire removing solution, followed by washing with water.

Pattern electrode manufacturing method and pattern electrode

Disclosed is a method of manufacturing a pattern electrode which excels in electroconductivity, transparency and etching property and a pattern electrode, the method comprising a step of applying a metal particle containing solution onto a substrate to form a conductive layer, a step of pattern printing a metal particle removing solution on a portion of the conductive layer, which is to be removed, and a step of washing the resulting printed material, whereby the portion of the conductive layer on which the metal particle removing solution has been printed is removed to form a non-conductive portion.

Growing community of inventors

Tokyo, Japan

Masaki Goto