Canon Kabushiki Kaisha

Masaki Fukaya

Toshiyuki Komatsu

Katsumi Nakagawa

Tatsumi Shoji

Nobuyuki Sekimura

Satoshi Itabashi

Soichiro Kawakami

Katsunori Hatanaka

Masaru Kamio

Ihachiro Gofuku

Katsunori Terada

Hideyuki Suzuki

Teruhiko Furushima

Tetsuya Kaneko

Toshihiro Saika

Yoshinori Isobe

Seishiro Yoshioka

Nobuko Kitahara

Yutaka Hirai

Takashi Nakagiri

Yuichi Masaki

Shunichi Uzawa

Tadaji Fukuda

Yoshiaki Shirato

Katsumi Komiyama

Hitoshi Toma

Kojiro Yokono

Hirofumi Iwamoto

Seiji Kakimoto

Yoshiyuki Osada

Noritaka Mochizuki

Masao Sugata

Mitsutoshi Kuno

Shinichi Seito

Shinichi Seitoh

Takaaki Yamagata

A photoelectric conversion device having a photoelectric conversion section and a transistor for transferring or amplification of the photoelectric conversion signal or an accumulating section of a photo carrier. The photoelectric conversion section and the transistor or the accumulating section have common semiconductor layer.

Method of making a device having a TFT and a capacitor

A photosensor includes a substrate; a photoconductive layer formed on the substrate; a pair of electrodes mounted on and electrically connected to the photoconductive layer; a light reception portion formed between the electrodes; and a protective layer formed on the light reception portion; wherein an organic silicon film with a small content of metal ion is formed at least at the uppermost portion of the protective layer.

Photosensor with organic and inorganic insulation layers

Photoelectronic conversion device

A TFT device has an insulation substrate, a semiconductor layer formed on the insulation substrate, a pair of opposed electrodes formed on the semiconductor layer, and a gate electrode formed on the semiconductor layer with an insulation film interposed therebetween, wherein a region doped with at least one type of impurity selected from atoms belonging to the V group of the periodic table is formed in the semiconductor layer at the vicinity of the interface between the semiconductor layer and the insulation layer.

TFT device

Method of making photoelectric conversion device

An image reading device has an entrance window provided in a substrate for receiving the light illuminating an information bearing member bearing information to be read. A photosensor is provided on the substrate for receiving the light that has entered through the entrance window and has been reflected by the information bearing member. Further, a protective layer is formed on the photosensor opposite to the substrate, in order to maintain a constant distance between the information bearing member and the photosensor, and has a multi-layer structure of separate functions, comprising a first layer of a first function at the side of the photosensor, and a second layer of another function different from the first function.

Image reading device with protective layers

A photoelectric conversion apparatus in which a plurality of photoelectric conversion elements are arranged in an array, and the outputs of the photoelectric conversion elements are read. The apparatus includes a plurality of switching elements connected equivalently in parallel with the respective photoelectric conversion elements. The photoelectric conversion elements of a particular row or column are connected in series.

Photoelectric conversion apparatus

Photoelectric conversion device having a common semiconductor layer for

An image reading device has an entrance window provided in a substrate and receiving the light illuminating an information bearing member bearing information to be read. A photosensor is provided on the substrate for receiving the light that has entered through the entrance window and has been reflected by the information bearing member. Further, a protective layer is formed on the photosensor opposite to the substrate, in order to maintain a constant distance between the information bearing member and the photosensor, and has a multi-layer structure of separate functions, comprising a first layer of a first function at the side of photosensor, and a second layer of another function different from the first function.

Image reading device with moisture resistant layer

A photoconductive type sensor which comprises a photoconductive layer having a photosensing region. A pair of main electrodes are provided which are disposed on the photosensing region of the photoconductive layer. The sensor also comprises a gate electrode for applying a bias voltage to the photosensing region. The gate electrode provides a bias of one polarity so as to suppress the generation of a channel in the photosensing region.

Photoconductive type sensor and its driving method and apparatus

A photosensor array for use with an image processing apparatus has a plurality of photosensors disposed in an array. Each photosensor includes a substrate, a photoconductive layer formed on the substrate and made of an amorphous silicon, and a pair of electrodes disposed on a surface of the photoconductive layer, the electrodes being spaced apart from each other by a certain distance partially defining a light receiving region of the photosensor. In the phososensor array, the photoconductive layer is constructed as of two or more laminated layers, and the lower layer positioned nearer to the substrate has a low content of oxygen.

Photosensor array for image processing apparatus

There is a photosensor comprising: a photoconductive layer containing amorphous silicon provided on a substrate in which this photoconductive layer consists of laminated films of two or more layers having different refractive indexes and the refractive index of the lowest layer of the laminated films is not larger than 3.2 for the incident light of a wavelength of 6328 .ANG.; a pair of electrodes provided in electrical contact with the photoconductive layer; and a photo sensing section. A long size image sensor unit is constituted by a plurality of such photosensors arranged like an array, a matrix drive circuit to matrix-drive each photosensor, and a light source such as light emitting diodes or a fluorescent lamp to illuminate an original to be read. With this image sensor unit, it is possible to provide a low-cost image reading apparatus which can read an image on the original at a high speed in which: the uniformity of the characteristic of each photosensor is improved; a variation in signal between the bits is reduced; a correction circuit for such a variation is unnecessary; and the peel-off of the photoconductive layer does not occur. A method of manufacturing such photosensors is also disclosed.

Method of manufacturing photosensors

A line sensor for color reading comprises a plurality of line sensors, each having photosensors arranged one-dimensionally, for the number of the color signals to be separated arranged in parallel with each other on one and the same substrate; and a color filter for color signal separation directly disposed on the light-receiving portion of each of said line sensors. The parallel line sensors may be disposed so as to be non-coplanar, e.g., by provision of insulating layers at least on wiring sections of the first and second line sensors, the second and third line sensors being disposed on the first and second insulating layers, respectively.

Color image sensor with three line sensors on different layers separated

There is a photosensor comprising: a photoconductive layer containing amorphous silicon provided on a substrate in which this photoconductive layer consists of laminated films of two or more layers having different refractive indexes and the refractive index of the lowest layer of the laminated films is not larger than 3.2 for the incident light of a wavelength of 6328 .ANG.; a pair of electrodes provided in electrical contact with the photoconductive layer; and a photo sensing section. A long size image sensor unit is constituted by a plurality of such photosensors arranged like an array, a matrix drive circuit to matrix-drive each photosensor, and a light source such as light emitting diodes of a fluorescent lamp to illuminate an original to be read. With this image sensor unit, it is possible to provide a low-cost image reading apparatus which can read an image on the original at a high speed in which: the uniformity of the characteristic of each photosensor is improved; a variation in signal between the bits is reduced; a correction circuit for such a variation is unnecessary; and the peel-off of the photoconductive layer does not occur. A method of manufacturing such photosensors is also disclosed.

Long size image sensor having improved consistency among individual

A photosensor comprising a photoconductive layer provided on a substrate. The layer contains amorphous silicon. At least a portion of the layer has a refractive index varying continuously through the thickness of the layer. The refractive index of the layer is 3.2 or less at a wavelength of 6,328 .ANG. in the vicinity of the surface of the substrate. A pair of electrodes are provided in electrical contact with the photoconductive layer. A photoreceptor is also provided, part of which is constituted by the spacing between the electrodes of the pair.

Method of making photosensors

Growing community of inventors

Isehara, Japan

Masaki Fukaya