Panasonic Intellectual Property Management Co., Ltd.

Panasonic Corporation

Masaki Fujikane

Toshiya Yokogawa

Akira Inoue

Yasuyuki Naito

Kunihiko Nakamura

Kouhei Takahashi

Naoki Tambo

Shin-Ichi Imai

Mari Onodera

Ryou Kato

Atsushi Yamada

Tadashi Yano

Mitsuaki Oya

Hiroyuki Tanaka

Kunimasa Takahashi

Toshiyuki Fujita

Takashi Kawasaki

Hironori Kumagai

Junko Iwanaga

Yuka Okada

Kosei Ohura

A thermopile sensor according to the present disclosure includes a p-type portion and an n-type portion. The p-type portion has a first phononic crystal in which first holes are arranged in a plan view. The n-type portion has a second phononic crystal in which second holes are arranged in a plan view. The p-type portion and the n-type portion constitute a thermocouple. The boundary scattering frequency of phonons in the first phononic crystal is different from the boundary scattering frequency of phonons in the second phononic crystal. Alternatively, the ratio of the sum of the areas of the first holes to the area of the first phononic crystal in a plan view is different from the ratio of the sum of the areas of the second holes to the area of the second phononic crystal in a plan view.

Thermopile sensor and sensor array

An infrared sensor is provided with an infrared light receiver, a signal pathway, and a first member. The infrared light receiver has a structure in which at least two materials having different coefficients of thermal expansion are layered. The signal pathway includes a first signal pathway allowing passage of a driving signal to be applied to the infrared light receiver. The driving signal has a current value equal to or greater than a prescribed magnitude, and the infrared light receiver deforms in response to the application of the driving signal to the infrared light receiver, thereby at least a portion of the infrared light receiver contacting the first member.

Infrared sensor and method of controlling infrared sensor

A thermoelectric conversion device includes: an insulating layer; and a thermoelectric conversion module disposed on the insulating layer. The thermoelectric conversion module has a first thermoelectric conversion region and a second thermoelectric conversion region. The first(second) thermoelectric conversion region includes one or two or more thermoelectric conversion elements, a first(third) connection electrode, and a second(fourth) connection electrode. The thermoelectric conversion elements of the first(second) thermoelectric conversion region are electrically connected to the first(third) connection electrode and the second(fourth) connection electrode and located on an electric path connecting these connection electrodes. Each of the thermoelectric conversion elements includes a thermoelectric converter. The thermoelectric converter of at least one of the thermoelectric conversion elements has a phononic crystal layer having a phononic crystal structure including a plurality of regularly arranged through holes. A through direction of the plurality of through holes in this crystal structure is substantially parallel to a direction perpendicular to a principal surface of the insulating layer.

Thermoelectric conversion device, method for controlling thermoelectric conversion device, method for cooling and/or heating object by using thermoelectric conversion device, and electronic device

A thermoelectric conversion device includes: a first thermoelectric conversion module, a first insulating layer, and a second thermoelectric conversion module. The first (second) thermoelectric conversion module includes one or two or more thermoelectric conversion elements, a first (third) connection electrode, and a second (fourth) connection electrode. The thermoelectric conversion elements of the first (second) thermoelectric conversion module are electrically connected to the first (third) connection electrode and the second (fourth) connection electrode and located on an electric path connecting these connection electrodes. Each of the thermoelectric conversion elements includes a thermoelectric converter. The thermoelectric converter of at least one of the thermoelectric conversion elements has a phononic crystal layer having a phononic crystal structure including a plurality of regularly arranged through holes. A through direction of the plurality of through holes in this crystal structure is substantially parallel to a stacking direction of the first thermoelectric conversion module, the first insulating layer, and the second thermoelectric conversion module.

The present disclosure provides a novel multilayer body. The multilayer body of the present disclosure includes a first phononic crystal layer and a second phononic crystal layer disposed on or above the first phononic crystal layer. The first phononic crystal layer has a first phononic crystal structure including a plurality of regularly arranged first through holes. The second phononic crystal layer has a second phononic crystal structure including a plurality of regularly arranged second through holes. The through direction of the plurality of first through holes in the first phononic crystal layer is substantially parallel to the through direction of the plurality of second through holes in the second phononic crystal layer.

Multilayer body and crystalline body

A gas sensor includes a substrate, a support layer, a base layer, a heater layer disposed on or above the base layer, a gas sensing layer that is disposed on or above one of the heater layer and the base layer and that has a gas concentration dependent electrical impedance, and a detection electrode that is electrically connected to the gas sensing layer and that detects the impedance of the gas sensing layer. The substrate has a cavity and an opening formed by the cavity. The support layer is disposed on the substrate so as to cover at least an entire periphery of the opening. The base layer is supported by the support layer above the cavity so as to be separated from the substrate. A portion of the support layer in contact with the cavity has a first phononic crystal structure structured by a plurality of regularly arranged through-holes.

Gas sensor

Each of first and second beams has a connection portion connected to a base substrate and a separated portion away from the base substrate, and is physically joined to an infrared receiver at the separated portion. The infrared receiver is supported by the first and second beams, and includes lower electrode, upper electrode, and a resistance change film. The resistance change film is sandwiched by the lower electrode and upper electrode in a thickness direction, each of the lower and upper electrodes is electrically connected to the resistance change film, the lower and upper electrodes are electrically connected to first wiring and second wiring, respectively, at least one electrode selected from the lower electrode and the upper electrode has a line-and-space structure, and an infrared reflection film is provided at a position on a surface of the base substrate facing the infrared receiver.

Infrared sensor and infrared sensor array

A thermoelectric conversion element includes a p-type thermoelectric converter, an n-type thermoelectric converter, a first electrode, a second electrode, and a third electrode. One end of the p-type converter is electrically connected to one end of the n-type converter. The other end of the p-type converter is electrically connected to the second electrode, and the other end of the n-type converter is electrically connected to the third electrode. The p-type converter includes a first phononic crystal layer having a first phononic crystal structure including regularly arranged first through holes. The n-type converter includes a second phononic crystal layer having a second phononic crystal structure including regularly arranged second through holes. The through direction of the first through holes is a direction extending between the ends of the p-type converter. The through direction of the second through holes is a direction extending between the ends of the n-type converter.

Thermoelectric conversion element and thermoelectric conversion device

An infrared sensor includes: a base substrate; a bolometer infrared receiver; a first beam; and a second beam. Each of the first and second beams has a connection portion connected to the base substrate and/or a member on the base substrate and a separated portion away from the base substrate, and is physically joined to the infrared receiver at the separated portion. The infrared receiver is supported by the first and second beams to be away from the base substrate. The infrared receiver includes a resistance change portion including a resistance change material the electrical resistance of which changes with temperature. The resistance change portion includes an amorphous semiconductor, and the first and second beams include a crystalline semiconductor made of the same base material as the resistance change material, and is electrically connected to the resistance change portion at the separated portion.

Infrared sensor, infrared sensor array, and method of manufacturing infrared sensor

An infrared sensor according to the present disclosure includes base substrate, infrared receiver, and beam. The beam includes connective portion connecting with the base substrate and/or a member on the base substrate, and separated portion separated from the base substrate. The infrared receiver and the beam are joined with each other at the separated portion. The infrared receiver is supported by the beam in a state where the infrared receiver is separated from the base substrate. The beam includes junction part joined to the infrared receiver, and section positioned between junction part and the connective portion, and section includes a phononic crystal structure defined by a plurality of through holes orderly arranged. The crystal structure includes a first domain and a second domain that are phononic crystal domains. The first domain includes, in a plan view, a plurality of through holes arranged orderly in a first direction, while the second domain includes, in a plan view, a plurality of through holes arranged orderly in a second direction that is different from the first direction. The infrared sensor according to the present disclosure has enhanced responsivity.

Infrared sensor and phononic crystal

A device includes a semiconductor substrate containing gallium nitride and having a crystal face inclined from 0.05&#xb0; to 15&#xb0; inclusive with respect to the c-plane. The semiconductor substrate includes an irregular portion on the crystal face, and the contact angle of pure water having a specific resistance of 18 M&#x3a9;&#xb7;cm or more on the surface of the irregular portion is 10&#xb0; or less.

Device including semiconductor substrate containing gallium nitride and method for producing the same

A liquid treatment apparatus for treating water to be treated, according to the present disclosure, includes a treatment tank, a dielectric partition wall dividing inside of the treatment tank into a first space in which the water to be treated is injected, and a second space in which an electrolytic solution is filled, a first electrode at least part of which is arranged in the first space of the treatment tank, a second electrode at least part of which is arranged in the second space of the treatment tank, and a power supply that applies a high-frequency AC voltage between the first electrode and the second electrode.

Liquid treatment apparatus and liquid treatment method

A liquid treatment method according to an aspect of the present disclosure comprises: starting application of a power between a pair of electrodes to generate plasma, which causes active species to be produced in a liquid; measuring the hydrogen ion concentration in the liquid while the plasma is generated; measuring a time elapsed after the starting the application of the power; and stopping the application of the power when a value calculated by (a) multiplying the hydrogen ion concentration by the elapsed time or (b) integrating the hydrogen ion concentration with respect to the elapsed time is larger than a first threshold.

Liquid treatment method and liquid treatment apparatus for treating a liquid with plasma

A liquid treatment unit includes: a treatment tank provided with an inlet and an outlet, the treatment tank having a shape that allows a portion of liquid to be retained; a controller that controls supply of liquid into the treatment tank and ejection of liquid from the treatment tank; and a plasma generator generates plasma in the liquid inside the treatment tank. The plasma generator generates plasma while the controller stops supply of liquid and ejection of liquid. After the liquid has been treated, the controller resumes the supply of liquid, and causes the liquid to be ejected from the treatment tank while allowing a portion of the treated liquid to be retained inside the treatment tank.

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Osaka, Japan

Masaki Fujikane