Sharp Kabushiki Kaisha Corporation

Masaki Fujihara

Takuya Matsuo

Yukihiko Nakata

Takashi Itoga

Michiteru Ayukawa

Masahiro Date

Masaya Okamoto

Noriko Watanabe

Shinsuke Saida

Yasumori Fukushima

Yuzuru Kanemori

Kenji Misono

Kenshi Tada

On a resin substrate () there are laminated, in the stated order, a conductive layer in which a bridge electrode () and leads are formed, a first interlayer insulating layer (), and an electrode layer that allows through visible light forming a unit electrode (XU) of a drive electrode line (X) and a unit electrode (YU) of a sensing electrode line (Y). It is accordingly possible to realize a touch panel substrate () capable of minimizing any increases in thickness, decreases in transmittance, complexity of terminal portions, and deterioration in optical characteristics.

Touch-panel substrate

A thin film transistor includes: a substrate; a gate electrode, a source electrode and a drain electrode formed above the substrate; and an insulating film and a semiconductor film formed between the gate electrode, and the source electrode and the drain electrode, wherein the semiconductor film includes an i-type silicon film, and a portion of the semiconductor film within 50 nm from the insulating film has a microcrystalline structure having a conductivity of 5&times;10,S/cm or more.

Thin film semiconductor device including a semiconductor film with high field-effect mobility

A thin film transistor includes: a substrate; a gate electrode, a source electrode and a drain electrode formed above the substrate; and an insulating film and a semiconductor film formed between the gate electrode, and the source electrode and the drain electrode, wherein the semiconductor film includes an i-type silicon film, and a portion or the semiconductor film within 50 nm from the insulating film has a microcrystalline structure having a conductivity of 5.times.10.sup.-10 S/cm or more.

Thin-film semiconductor device including a semiconductor film with high

A liquid crystal display device incorporating an active matrix substrate having an inter-layer insulating film between a pixel electrode and gate and source signal lines. In this liquid crystal display device, the source signal line has a double-layer structure of an upper-layer line and a lower-layer line, but the upper-layer line is eliminated at the intersection of the gate signal line and the source signal line. This structure prevents a decrease in the thickness of the inter-layer insulating layer on the intersection of the gate signal line and the source signal line.

Active matrix substrate and liquid crystal display device

Growing community of inventors

Osaka, Japan

Masaki Fujihara