Canon Kabushiki Kaisha

Kyoto University

National Institute of Advanced Industrial Science and Technology

Tokyo Institute of Technology

University of Yamanashi

Tokyo University of Science Educational Foundation Administrative Organization

Sophia University

Masaki Azuma

Makoto Kubota

Kaoru Miura

Takashi Iijima

Yuichi Shimakawa

Satoshi Wada

Hiroshi Funakubo

Nobuhiro Kumada

Soichiro Okamura

Jumpei Hayashi

Hisato Yabuta

Yoshihiko Matsumura

Toshihiro Ifuku

Kenji Takashima

Yoshitaka Nakamura

Kenichi Takeda

Hiroshi Uchida

Bong-Yeon Lee

Olga Alexandrovna Smirnova

Takanori Matsuda

Tatsuo Furuta

Takayuki Watanabe

Zuyi Zhang

Mikio Shimada

Keisuke Yamato

Masanori Kawai

Provided are a thermal expansion suppressing member having negative thermal expansion properties and a metal-based anti-thermally-expansive member having small thermal expansion. More specifically, provided are a thermal expansion suppressing member, including at least an oxide represented by the following general formula (1), and an anti-thermally-expansive member, including a metal having a positive linear expansion coefficient at 20&#xb0; C., and a solid body including at least an oxide represented by the following general formula (1), the metal and solid being joined to each other: (BiM)NiO(1) where M represents at least one metal selected from the group consisting of La, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu, Y, and In; and x represents a numerical value of 0.02&#x2264;x&#x2264;0.15.

Thermal expansion suppressing member and anti-thermally-expansive member

Provided is a piezoelectric material excellent in piezoelectricity. The piezoelectric material includes a perovskite-type complex oxide represented by the following General Formula (1).A(ZnTi)MO&#x2003;&#x2003;(1)wherein A represents at least one kind of element containing at least a Bi element and selected from a trivalent metal element; M represents at least one kind of element of Fe, Al, Sc, Mn, Y, Ga, and Yb; x represents a numerical value satisfying 0.4&#x2266;x&#x2266;0.6; and y represents a numerical value satisfying 0.1&#x2266;y&#x2266;0.9.

Metal oxide

Provided are a piezoelectric thin film having good piezoelectricity in which a rhombohedral structure and a tetragonal structure are mixed, and a piezoelectric element using the piezoelectric thin film. The piezoelectric thin film includes a perovskite type metal oxide, in which the perovskite type metal oxide is a mixed crystal system of at least a rhombohedral structure and a tetragonal structure, and a ratio between an a-axis lattice parameter and a c-axis lattice parameter of the tetragonal structure satisfies 1.15&#x2266;c/a&#x2266;1.30. The piezoelectric element includes on a substrate: the above-mentioned piezoelectric thin film; and a pair of electrodes provided in contact with the piezoelectric thin film.

Piezoelectric thin film, piezoelectric element, and manufacturing method thereof

Provided are a bismuth-based piezoelectric material whose insulation property is improved while its performance as a piezoelectric body is not impaired and a piezoelectric device using the piezoelectric material. The piezoelectric material includes a perovskite-type metal oxide represented by the following general formula (1):Bi(FeCo)O&#x2003;&#x2003;(1)where 0.95&#x2266;x&#x2266;1.25 and 0&#x2266;y&#x2266;0.30, and a root mean square roughness Rq (nm) of a surface of the piezoelectric material satisfies a relationship of 0&#x3c;Rq&#x2266;25y+2 (0&#x2266;y&#x2266;0.30).

Method of producing piezoelectric device using Be, Fe and Co under excess oxygen atmosphere

Provided are resin-based and metal-based anti-thermally-expansive members each having small thermal expansion. More specifically, provided are an anti-thermally-expansive resin and an anti-thermally-expansive metal, each including a resin or a metal having a positive linear expansion coefficient at 20&#xb0; C. and a solid particle dispersed in the resin or metal, in which the solid particle includes at least an oxide represented by the following general formula (1): (BiM)NiO(1), where M represents at least one metal selected from the group consisting of La, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu, Y, and In; and x represents a numerical value of 0.02&#x2266;x&#x2266;0.15.

Anti-thermally-expansive resin and anti-thermally-expansive metal

Provided are a thermal expansion suppressing member having negative thermal expansion properties and a metal-based anti-thermally-expansive member having small thermal expansion. More specifically, provided are a thermal expansion suppressing member, including at least an oxide represented by the following general formula (1), and an anti-thermally-expansive member, including a metal having a positive linear expansion coefficient at 20&#xb0; C., and a solid body including at least an oxide represented by the following general formula (1), the metal and solid being joined to each other: (BiM)NiO(1) where M represents at least one metal selected from the group consisting of La, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu, Y, and In; and x represents a numerical value of 0.02&#x2266;x&#x2266;0.15.

Provided are resin-based and metal-based anti-thermally-expansive members each having small thermal expansion. More specifically, provided are an anti-thermally-expansive resin and an anti-thermally-expansive metal, each including a resin or a metal having a positive linear expansion coefficient at 20&#xb0; C. and a solid particle dispersed in the resin or metal, in which the solid particle includes at least an oxide represented by the following general formula (1):(BiM)NiO&#x2003;&#x2003;(1),where M represents at least one metal selected from the group consisting of La, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu, Y, and In; and x represents a numerical value of 0.02&#x2266;x&#x2266;0.15.

Provided are a bismuth-based piezoelectric material whose insulation property is improved while its performance as a piezoelectric body is not impaired, and a piezoelectric device using the piezoelectric material. The piezoelectric material includes a perovskite-type metal oxide represented by the following general formula (1):Bi(FeCo)O&#x2003;&#x2003;(1)where 0.95&#x2266;x&#x2266;1.25 and 0&#x2266;y&#x2266;0.30, and a root mean square roughness Rq (nm) of a surface of the piezoelectric material satisfies a relationship of 0&#x3c;Rq&#x2266;25y+2 (0&#x2266;y&#x2266;0.30).

Piezoelectric material, piezoelectric device, and method of producing the piezoelectric device

Provided is a piezoelectric material including a lead-free perovskite-type composite oxide which is excellent in piezoelectric characteristics and temperature characteristics and is represented by the general formula (1):ABO-A'BO-A&#x2033;B&#x2032;Oin which A is a Bi element; A&#x2032; is a rare earth element including La; B is at least one element selected from Ti, Zn, Sn and Zr; A&#x2033; is at least one element selected from Ba, Sr and Ca; B&#x2032; is at least one element selected from divalent, trivalent, pentavalent, tetravalent, and hexavalent elements; and x is a value of 0.10 or more and 0.95 or less, y is a value of 0 or more and 0.5 or less, and z is a value of 0 or more and 0.7 or less, provided that x+y+z=1.

Piezoelectric material

An oxynitride piezoelectric material, which exhibits ferroelectricity and has good piezoelectric properties, and a method of producing the oxynitride piezoelectric material. The oxynitride piezoelectric material includes a tetragonal perovskite-type oxynitride represented by the following general formula (1):ABiBB'ON&#x2003;&#x2003;(1),where A represents a divalent element, B and B&#x2032; each represent a tetravalent element, x represents a numerical value of 0.35 or more to 0.6 or less, y represents a numerical value of 0.35 or more to 0.6 or less, z represents a numerical value of 0.35 or more to 0.6 or less, and &#x3b4;1 and &#x3b4;2 each represent a numerical value of &#x2212;0.2 or more to 0.2 or less, in which the A includes at least one kind selected from Ba, Sr, and Ca and the B and the B&#x2032; each include at least one kind selected from Ti, Zr, Hf, Si, Ge, and Sn.

Oxynitride piezoelectric material and method of producing the same

Provided are a piezoelectric material without using lead or an alkali metal, the piezoelectric material having a stable crystal structure in a wide temperature range, high insulation property, and high piezoelectric property, and a piezoelectric element using the piezoelectric material, in which the piezoelectric material is made of a metal oxide having a tetragonal crystal structure and expressed by Ba(SiGeTi)O(here, 0&#x2266;x&#x2266;1, 0&#x2266;y&#x2266;1, and 0&#x2266;z&#x2266;0.5), the piezoelectric element includes the piezoelectric material and a pair of electrodes sandwiching the piezoelectric material, and at least one of the pair of electrodes is made of SrRuOor Ni.

Growing community of inventors

Kyoto, Japan

Masaki Azuma