Kabushiki Kaisha Toshiba

Masaki Atsuta

Mitsushi Ikeda

Akira Kinno

Keita Sasaki

Honam Kwon

Hitoshi Yagi

Hideyuki Funaki

Kazuhiro Suzuki

Manabu Tanaka

Ikuo Fujiwara

Rei Hasegawa

Toshiyuki Oka

Koichi Ishii

Hiroto Honda

Tomomasa Ueda

Hajime Yamaguchi

Nobuyoshi Saito

Tatsunori Sakano

Yujiro Hara

Shintaro Nakano

Kentaro Miura

Kouhei Suzuki

Yuki Nobusa

Yuya Maeda

Akio Nakagawa

Kenichi Mori

Takuya Sakaguchi

Takashi Shinohe

Katsuyuki Naito

Takashi Miyazaki

Mutsuki Yamazaki

Hitoshi Nagato

Yasushi Shinjo

Risako Ueno

Hideyuki Nakao

Hiroko Nakamura

Reiko Yoshimura

Hirohisa Miyamoto

Ko Yamada

Kouji Suzuki

Mitsuhiro Oki

Norihiko Kamiura

Masako Ogata

Yoshiko Tsuji

Kohei Suzuki

Yoshifumi Ogawa

Yasuhiro Sugawara

Momoko Takemura

According to one embodiment, a light detector includes an element including a photodiode. A plurality of the elements are provided. The element includes a structure body for at least a portion of the plurality of elements. The structure body surrounds the photodiode and has a different refractive index from the photodiode. At least portions of the structure bodies are separated from each other.

Light detector, light detection system, lidar device, and vehicle

A photodetector according to the present embodiment includes a plurality of light detectors. Each light detector has a first semiconductor layer of a first conductive type and a second semiconductor layer of a second conductive type different from the first conductive type, in which the first semiconductor layer and the second semiconductor layer constitute a PN junction. The photodetector further includes a quench resistor that is optically transmissive and connected to the second semiconductor layer.

Photodetector and lidar device comprising a detector having a PN junction connected to an optically transmissive quench resistor

A molecular detection apparatus according to an arrangement includes: a collection unit collecting a detection target gas containing a molecule to be detected; a detector including a detection cell that has an organic probe provided in a sensor unit, the organic probe capturing the collected molecule, and a discriminator discriminating the molecule by a detection signal generated by the molecule being captured by the organic probe of the detection cell. The detection cell has the organic probe including a dicyanovinyl structure or a coumarin structure.

Molecular detection apparatus and molecular detection method

A photodetector according to an embodiment includes: a substrate with a first and second faces; pixels disposed to the substrate, each pixel including: light detection cells disposed on the first face, each light detection cell being surrounded by a first opening having a continuous closed curve shape formed on the second face when viewed from a side of the second face; a first wiring line disposed on the first face to connect to each of the light detection cells; first electrodes, each of the first electrodes being disposed in corresponding one of third openings and connected to the second face, the third openings being disposed in a first insulating film and exposing a part of respective regions of the light detection cells in the second face; a second electrode disposed on the second surface and connecting the first electrodes; and a light blocking material filled to the first opening.

Photodetector and radiation detector

According to one embodiment, a semiconductor device includes a semiconductor layer including a first semiconductor portion and a second semiconductor portion being continuous with the first semiconductor portion, a first gate electrode, a second gate electrode, an insulating film. The first semiconductor portion includes a first portion, a second portion and a third portion provided between the first portion and the second portion. The second semiconductor portion includes a fourth portion separated from the first portion, a fifth portion separated from the second portion, and a sixth portion provided between the forth portion and the fifth portion. The first gate electrode is separated from the third portion. The second gate electrode is separated from the sixth portion. The insulating film is provided at a first position between the first gate electrode and the semiconductor layer and at a second position between the second gate electrode and the semiconductor layer.

Semiconductor device and imaging device

According to an embodiment, a photodetector includes a photodetecting element that has a pn junction and outputs a photocurrent corresponding to detected light, a voltage applying unit that applies a voltage to the photodetecting element, an obtaining unit that obtains the photocurrent detected by the photodetecting element, and a voltage controller. The voltage controller controls the voltage applying unit to apply, during a drive period, a drive voltage whose absolute value is not smaller than an avalanche breakdown voltage of the pn junction and which is in reverse bias with respect to the pn junction; and apply, during a standby period, any of a first standby voltage in forward bias, a second standby voltage with a voltage value of 0 V, and a third standby voltage whose absolute value is greater than 0 V, which is less than the drive voltage, and which is in reverse bias.

Photodetector

A semiconductor element includes a semiconductor layer, a first and a second conductive unit, a gate electrode, and a gate insulating film. The semiconductor layer includes a first portion, a second portion, and a third portion provided between the first portion and the second portion. The first conductive unit is electrically connected to the first portion. The second conductive unit is electrically connected to the second portion. The gate electrode is separated from the first conductive unit, the second conductive unit, and the third portion. The gate electrode opposes the third portion. The gate insulating film is provided between the third portion and the gate electrode. A concentration of nitrogen of the first portion is higher than a concentration of nitrogen of the third portion. A concentration of nitrogen of the second portion is higher than the concentration of nitrogen of the third portion.

Semiconductor element, display device, method for manufacturing semiconductor element, and method for manufacturing display device

According to one embodiment, a display device includes an interference filter including following layers, and a display layer. The first common layer includes first and second regions. The second common layer faces the first common layer. The first spacer layer is provided between the first and second common layers and includes first and second portions facing the first and second regions. The thickness of the first portion is different from the thickness of the second portion. The second spacer layer faces at least one of the first and second portions through the second common layer and is made of the same material as that of the first spacer layer. The coating layer faces the second common layer through the second spacer layer.

Interference filter, display device, and display device manufacturing method

An imaging device according to an embodiment includes: a semiconductor substrate; a reference pixel with a first concave portion disposed in a first portion of a surface of the semiconductor substrate; and one or more infrared detection pixels each configured to detect light with a second concave portion disposed in a second portion of the surface of the semiconductor substrate, the reference pixel being directly connected to the semiconductor substrate at a position where the first concave portion is not present, and including a first thermoelectric conversion unit configured to convert heat to an electric signal, the first thermoelectric conversion unit being disposed in the first concave portion and including a first thermoelectric conversion element, each infrared detection pixel including a second thermoelectric conversion unit being disposed in the second concave portion and including a second thermoelectric conversion element.

Imaging device

An uncooled infrared imaging element includes a pixel region, a device region, and a support substrate. The pixel region includes heat-sensitive pixels. The heat-sensitive pixels are arranged in a matrix and change current-voltage characteristics thereof in accordance with receiving amounts of infrared. The device region includes at least one of a drive circuit and a readout circuit which includes a MOS transistor. The drive circuit drives the heat-sensitive pixels. The readout circuit detects signals of the heat-sensitive pixels. The support substrate is provided with a cavity region to be under pixel region and the MOS transistor.

Uncooled infrared imaging element and manufacturing method thereof

According to one embodiment, an infrared detection device includes a detection element. The detection element includes a semiconductor substrate, a signal interconnect section, a detection cell and a support section. The semiconductor substrate is provided with a cavity on a surface of the semiconductor substrate. The signal interconnect section is provided in a region surrounding the cavity of the semiconductor substrate. The detection cell spaced from the semiconductor substrate above the cavity includes a thermoelectric conversion layer, and an absorption layer. The absorption layer is laminated with the thermoelectric conversion layer, and provided with a plurality of holes each having a shape whose upper portion is widened. The support section holds the detection cell above the cavity and connects the signal interconnect section and the detection cell.

Infrared detection device

An uncooled infrared image sensor according to an embodiments includes: a plurality of pixel cells formed in a first region on a semiconductor substrate; a reference pixel cell formed in a second region on the semiconductor substrate and corresponding to each row or each column of the pixel cells; a supporting unit formed for each of the pixel cell and supporting a corresponding pixel cell; and an interconnect unit formed for each reference pixel cell. Each of the pixel cells includes: a first infrared absorption film and a first heat sensitive element. The reference pixel cell includes: a second infrared absorption film and a second heat sensitive element, the second heat sensitive element having the same characteristics as characteristics of the first heat sensitive element. The third and fourth interconnects of the interconnect unit have the same electrical resistance as electrical resistance of the first and second interconnects of the supporting unit.

Uncooled infrared image sensor

An X-ray detector includes: a semiconductor substrate to generate charged particles by an irradiation of an X-ray; a plurality of pixel electrodes arranged in matrix on an X-ray incident surface of the semiconductor substrate and applied with a first electric potential to detect the charged particles; and a platy electrode provided on a surface opposite to the X-ray incident surface of the semiconductor substrate and applied with a second electric potential different from the first electric potential.

X-ray detector

A flat panel X-ray detector, including an X-ray-electric-charge converting film containing a metal halide and serving to convert an incident X-ray into an electric charge, a pair of electrodes formed on both surfaces of the X-ray-electric-charge converting film, and a blocking layer formed in contact with at least one surface of the X-ray-electric-charge converting film and containing a substance selected from the group consisting of a metal oxide, a metal nitride, a metal halide oxide, a first mixture of at least two of these materials, and a second mixture of a metal halide and any of these materials.

Flat panel x-ray detector

A flat panel X-ray detector which includes an X-ray-charge conversion film converting incident X-rays into electric charges, and a pair of electrodes disposed in contact with both surfaces of the X-ray-charge conversion film The X-ray-charge conversion film has a laminate structure including a plurality of metal halide films differing in band gap from one another and laminated along direction of c-axis of hexagonal crystal structure, and halogen atoms contained in the plurality of metal halide films are of the same kind among them.

Flat panel X-ray detector

Growing community of inventors

Yokosuka, Japan

Masaki Atsuta