Ngk Spark Plug Company, Limited

Idemitsu Petrochemical Co., Ltd.

Ngk Spark Plug Cp. Ltd.

Masakazu Watanabe

Akiyasu Okuno

Satoshi Iio

Yasushi Matsuo

Kazuhiko Ikoma

Takashi Okamura

Yo Tajima

Takahisa Ushida

Toshimichi Ito

Kenichi Mizuno

Hitoshi Yokoi

Junichiro Suzuki

Katsuhisa Yabuta

Isamu Fukuura

Masaya Tsubokawa

Shoji Sakakibara

Kenji Nakanishi

Kazuo Kondo

Masahiko Okuyama

Kazuhiro Urashima

Shunkichi Nozaki

Toru Imura

Hiroyasu Saka

Tomohisa Kito

Kotaro Kuroda

Satoshi Katsumata

Diamond coating member is produced by a method comprising a first coating step in which the first diamond coating layer is closely formed on fine irregularity parts of a substrate having fine irregularities substantially without void left between them and the fine irregularities is engaged with the above first layer to coat the above substrate, and a second coating step in which the surface of the first coating layer is coated with a second diamond coating layer comprising diamond having a higher wear resistance than that of the first coating layer. The diamond coating member is excellent in adhesion between the diamond coating layer and the substrate and has high durability without having the diamond coating layer scaled off by mechanical shocks. It has high wear resistance and enables mass production without fluctuation in product quality.

Method for producing diamond coated member

Ceramic-based substrate for coating, e.g., diamond has a basic irregularities surface having a surface roughness Rz of 2 to 20 .mu.m, with Rz at angle regions of 40% or more of that for other than the angle regions. The basic irregularities surface has micro-sized irregularities on an order of crystal grains constituting the uppermost surface (0.5 to 10 .mu.m), forming dual irregularities surface structure. Coating layer engages with surface irregularities to secure firm adhesion at the cutting edge. WC-based cemented carbide is used as substrate and N-containing surface layer is formed by heat treatment to form the surface irregularities.

Ceramic-based substrate for coating diamond and method for preparing

Method for coating a substrate formed of a sintered silicon nitride based material with a film of diamond by a gas phase synthesis technique including a first step of applying a film having a thickness of 0.5 to 2.0 .mu.m at a temperature not higher than a temperature at which grain boundary components of the substrate volatilize, and a second step of synthesizing the film of diamond-and-the-like to a thickness of 5 to 100 .mu.at a temperature which expedites synthesis of the film of diamond.

Method for producing silicon nitride based member coated with film of

A ceramic cutting tool of a TiC-based sintered body containing 40 wt % or more of TiC, and 5 to 40 wt % of SiC whisker uniformly dispersed in the sintered body, said SiC whisker having a diameter of 0.2-1.5 .mu.m and a length of 1-20 .mu.m. The sintered body may include up to 40 wt % of Al.sub.2 O.sub.3, and may further contain sintering aid. Up to 40% by weight of TiC may be substituted with at least one of Ti, nitrides, oxides and borides of Ti, and solid-solution of said nitrides, oxides and borides of Ti to form a TiC-base composition. The TiC-base composition may be represented by (Ti.sub.a M.sub.b) (C.sub.c N.sub.d O.sub.e B.sub.f).sub.g where: M denotes at least one of transition metal elements of Groups IVa, Va and VIa, except Ti, according to the International Periodic Table; and a+b=1, 0&lt;b.ltoreq.0.5, c+d+e+f=1, 0.5 .ltoreq.c.ltoreq.1.0, 0.ltoreq.d.ltoreq.0.5, 0.ltoreq.e.ltoreq.0.3, 0.ltoreq.f.ltoreq.0.5, 0.6.ltoreq.g.ltoreq.1.1.

Process for making TiC-base/SiC whisker composite ceramic cutting tools

A ceramic cutting tool formed of a TiC-based sintered body contains 40 wt % or more of TiC, and 5 to 40 wt % of SiC whisker uniformly dispersed in the sintered body. The SiC whisker has a diameter of 0.2-1.5 .mu.m and a length of 1-20 .mu.m. The sintered body may contain up to 40 wt % of Al.sub.2 O.sub.3, and further sintering aids. Up to 40% by weight of the TiC may be substituted with at least one of Ti, nitrides, oxides and borides of Ti, and solid-solutions of these nitrides, oxides and borides of Ti to form a TiC-base composition. The TiC base composition may be represented by the formula (Ti.sub.a M.sub.b) (C.sub.c N.sub.d O.sub.e B.sub.f).sub.g, in which M denotes at least one transition metal element of Groups IVa, Va and VIa according to the International Periodic Table, except Ti; and a+b=1, 0&lt;b.ltoreq.0.5, c+d+e+f=1; 0.5 c.ltoreq.1.0; 0.ltoreq.d.ltoreq.0.5; 0.ltoreq.e.ltoreq.0.3; 0.ltoreq.f.ltoreq.0.5; and 0.6.ltoreq.g.ltoreq.1.1.

TiC-base/SiC whisker composite ceramic cutting tools

A diamond-coated body is prepared by coating a diamond film on the surface of a sintered body by means of vapor phase synthesis, the sintered body being so prepared by subjecting a sintered body prepared from ceramics based on silicon nitride to heat treatment at the temperature of 1,400.degree. C. to 1,700.degree. C. as to give a crystalline intergranular phase. The resulting diamond-coated body has excellent adhesion between the diamond film and the substrate and it is appropriately employed for cutting tools and so on because, when applied to the cutting tools, they can be used for cutting for a long period of time.

Diamond-coated bodies and process for preparation thereof

Diamond-coated body

Silicon oxynitride sintered body is obtained by sintering a base starting material mixture comprising silicon oxynitride component and a solution of at least one alkoxide selected from alkoxides of at least one element selected from the group consisting of Al, Sc, Y and rare-earth elements. Fiber-reinforced ceramic sintered body is obtained by sintering the base starting material mixture further inclusing 5-40% by weight of SiC whiskers and/or .beta.-Si.sub.3 N.sub.4 whiskers, wherein alkoxide component is 0.5-30% by weight as oxides. The alkoxide component is deposited on the other material powders and calcined to provide well dispersed oxide layer on the powder surface which forms uniform matrix phase giving high density by sintering. Sintered bodies (with or without whiskers) have low deterioration at high temperatures.

Silicon oxynitride sintered body

Silicon-nitride-based sintered body is produced by a primary sintering; applying a paste-like coating, in which a surface-homogenizing agent is at least one kind of inorganic constituents selected from the group consisting of C, Bn, AlN and Si.sub.3 N.sub.4 provided that C is present at least 5% by weight of the inorganic constituents, on a primary sintered body; and subsequently performing a secondary sintering under a pressure higher than that at the primary sintering.

Method of producing silicon-nitride-based sintered body

Silicon nitride base sintered body consists of: 1 to 20 wt % (as oxides) of at least one of rare earth elements; 0.5 to 8 wt % of V (as V.sub.2 O.sub.5); 0.5 to 8 wt % (as oxides) of at least one of Nb, Ta, Cr, Mo and W; sum of the Va and VIa group elements according to the Periodic Table of the International Version (as oxides) being 1 to 10 wt %; and balance silicon nitride. It has high strength of 690-880 MPa (70-90 kgf/mm.sup.2) and high oxidation resistance both at 1350.degree. C. It is produced by 2 stage gas-pressure sintering in pressurized N.sub.2 atmosphere, primarily at 1700.degree.-1900.degree. C. at 1 MPa (10 atm) or less and secondarily at 1600.degree.-1900 C. at 10 MPa (100 atm) or above.

Silicon nitride sintered body and method for producing same

A sintered body of silicon nitride having high strength, toughness and oxidation resistance consists essentially of, by weight percentages, 0.5 to 7.0% of a Mg component calculated as MgO, 0.5 to 7.0% of a Zr component calculated as ZrO.sub.2, 0.5 to 10.0% of a Ce component calculated as CeO.sub.2, and the balance being Si.sub.3 N.sub.4. The sum of Mg, Zr and Ce components calculated as oxides is 3 to 20% by weight. This product is suitable for engine parts or cutting tools.

Silicon nitride sintered body

A sintered body of silicon nitride with high density, strength, toughness, and hardness, which can be used for a structural part of an engine, etc. The sintered body of the invention includes 80 to 94 wt % Si.sub.3 N.sub.4, 2 to 10 wt % Mg compound calculated in MgO equivlent, and 2 to 10 wt % Y compound calculated in Y.sub.2 O.sub.3 equivalent. The Si.sub.3 N.sub.4 contains 5 to 40% .alpha.-phase. The sintered body is manufactured in the following steps: (a) mixing powdery Si.sub.3 N.sub.4 with a Mg compound and a Y compound in the above proportions, and then molding the mixture in which the Si.sub.3 N.sub.4 powder contains 80% or more .alpha.-phase and its grains are 1 .mu.m or less in diameter on average; (b) performing primary sintering at 1,600.degree. C. or less in an atmospher of nitrogen or of an inert gas at 20 atm or less; and (c) performing secondary sintering at 1,400.degree. to 1,600.degree. C. in an atmosphere of nitrogen or of an inert gas at 300 atm or more.

Sintered body of silicon nitride and its manufacture

A sintered silicon nitride product comprises from 72 to 98% by weight of silicon nitride, from 1 to 8% by weight of vanadium pentoxide, and from 1 to 20% by weight of one or more oxides of rare earth elements. The vanadium pentoxide and the oxide of rare earth elements accelerate the densification of the sintered product, and provide high strength at high temperature as well as excellent oxidation resistance to the sintered product.

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Nagoya, Japan

Masakazu Watanabe