Mitsubishi Denki Kabushiki Kaisha

Mitsubishi Electric Corporation

Renesas Technology Corp.

Other

Renesas Electronics Corporation

Mitsubishi Denki K.k.

Masakazu Taki

Kenji Yoshizawa

Takeharu Kuroiwa

Takashi Takenaga

Taisuke Furukawa

Kenji Shintani

Hiroki Ootera

Junichi Nishimae

Yasutaka Inanaga

Gaku Oinuma

Mutsumi Tsuda

Akihiko Iwata

Kazuyasu Nishikawa

Minoru Hanazaki

Hiroshi Kobayashi

Tatsuo Oomori

Teruki Naito

Hitoshi Kodama

Isao Shoda

Kazuo Magome

Yuji Abe

Hiroshi Takada

Shinji Yamaguchi

Yoshihiro Ueda

Takao Tsurimoto

Akira Morikawa

Hirotaka Muto

Keisuke Namba

Toshio Komemura

Toshihiko Noguchi

Tokiko Yamauchi

Mutumi Tuda

Yasuhiro Nakamura

Shingo Tomohisa

Sadeh Beysen

Takayuki Ikushima

Susumu Maeda

Makoto Takata

Kenji Shirakawa

Kazuyuki Fujii

Tadashi Yanagi

Gen Kawaharada

Beysen Sadeh

Keiichi Sugahara

In a water treatment apparatus, a tilted plate is disposed at an incline relative to a horizontal plane. Water to be treated is passed over the upper surface of the tilted plate. A discharge forming body is disposed across a gas layer above a water film formed by the water to be treated flowing over the tilted plate. A droplet forming apparatus exerts power on the water film so that at least some of the water to be treated shoots upward in the form of droplets.

Water treatment apparatus and water treatment method

A water treatment apparatus including: discharge treatment units each including a ground electrode and a discharge electrode opposing the ground electrode, and water to be treated is treated by forming a discharge between the ground electrode and the discharge electrode, and generating ozone by the discharge, and moreover causing the water to be treated to contact the discharge; a water reservoir portion that collects, in the interior of the treatment tank, the water to be treated having been subject to water treatment by one of the discharge treatment units; and an ozone supply section that supplies the ozone in the treatment tank to the water to be treated in the water reservoir portion are provided, and wherein the water to be treated passes through the plurality of discharge treatment units as a continuous flow.

A water treatment device generates a bubble in water to be treated inside a treatment tank, and treats the water to be treated through use of radicals that are generated by bubble electric discharge caused via the bubble. The water treatment device includes main electrodes for forming a main discharge area between a first main electrode and a second main electrode, auxiliary electrodes for forming a preliminary discharge area between a first auxiliary electrode and a second auxiliary electrode, and a bubble generator generating a bubble in water to be treated through use of an externally supplied gas. When a bubble generated by the bubble generator passes through the preliminary discharge area, discharge is caused via the bubble, and, when the bubble in an excited state subsequently passes through the main discharge area, the bubble causes discharge again to generate radicals.

Water treatment device and water treatment method

A water treatment apparatus, upper surfaces of two of the consecutively arranged ground electrodes are alternately inclined in opposite directions with respect to a horizontal plane, a gap is formed between a lower surface of an upper side ground electrode and an upper surface of a lower side ground electrode, a voltage is applied to a discharge electrode provided in the gap, thereby forming discharges both in air between the discharge electrode and the lower surface of the upper side ground electrode and in air between the discharge electrode and the upper surface of the lower side ground electrode, and water to be treated is caused to continuously flow downward from the ground electrode of an uppermost part to the ground electrode of a lowermost part along the respective upper surfaces such that the water to be treated is treated.

An apparatus including a vacuum chamber having a substrate holding unit that holds a substrate and a plasma electrode facing the substrate, a first gas supply unit that supplies a Hgas to the vacuum chamber at a constant flow rate, a second gas supply unit that opens or closes a valve to turn on or off the supply of a SiHgas, a high-frequency power source that applies a high frequency voltage to the plasma electrode, a shield box that is connected to a ground so as to surround the plasma electrode outside the vacuum chamber, and a control unit that controls the valve such that the SiHgas is periodically supplied to the vacuum chamber and modulates the amplitude of high frequency power in synchronization with the opening or closing of the valve, and the valve is provided in the shield box.

Apparatus for forming thin film and method of manufacturing semiconductor film

A magnetic field detection device including a magnetic body (magnetic flux guide) provided for adjusting a magnetic field to be applied to a magneto-resistance element. A shape of an on-substrate magnetic body in plan view is a tapered shape on one end portion side and a substantially funnel shape on another end portion side opposite the one end portion, the another end portion being larger in width than the one end portion, and a magneto-resistance element is disposed in front of an output-side end portion. In the on-substrate magnetic body, a contour of a tapered portion is not linear like a funnel, but has a curved shape in which a first curved portion protruding outward with a gentle curvature and a second curved portion protruding inward with a curvature similar to that of the first curved portion are continuously formed.

Magnetic field detection device

Ferromagnetic layers have magnetizations oriented to such directions as to cancel each other, so that the net magnetization of the ferromagnetic layers is substantially zero. That is, the ferromagnetic layers are exchange-coupled with a nonmagnetic layer interposed therebetween, thereby forming an SAF structure. Since the net magnetization of the ferromagnetic layers forming the SAF structure is substantially zero, the magnetization of a recording layer is determined by the magnetization of a ferromagnetic layer. Therefore, the ferromagnetic layer is made of a CoFeB alloy having high uniaxial magnetic anisotropy, and the ferromagnetic layers are made of a CoFe alloy having a high exchange-coupling force.

Nonvolatile memory device

In remote plasma cleaning, it is difficult to locally excite a plasma because the condition is not suitable for plasma excitation different from that at the time of film formation and a method using light has a problem of fogginess of a detection window that cannot be avoided in a CVD process and is not suitable for a mass production process. In order to solve these problems, the outline of the present invention is a manufacturing method of a semiconductor integrated circuit device in which a step of depositing a desired film by exciting a reaction gas using a plasma in a reaction chamber and a step of introducing a cleaning gas excited in a remote plasma excitation chamber into the reaction chamber and performing remote plasma cleaning of the reaction chamber in an atmosphere without plasma excitation are repeated, wherein a local plasma is generated in the reaction chamber or a vacuum system for evacuating the reaction chamber by a plasma excitation system of capacitively coupled type and the end point of the remote plasma cleaning is detected by monitoring the electrical characteristic of the plasma.

Manufacturing method of semiconductor integrated circuit device

A magnetic field detection apparatus capable of changing the detection range and detection sensitivity as desired for a specific application is disclosed. A magnetoresistance effect element is applied a bias magnetic field and an external magnetic field. The bias magnetic field and the external magnetic field are generated on the same straight line, and therefore the bias magnetic field functions to hamper the external magnetic field applied to the magnetoresistance effect element. Thus, the magnetization of the free layer of the magnetoresistance effect element is suppressed, and the rotational angle of the magnetized vector is reduced. As a result, the characteristic of the resistance value of the magnetoresistance effect element to the external magnetic field is shifted by an amount equivalent to the bias magnetic field.

Magnetic field detection apparatus for detecting an external magnetic field applied to a magnetoresistance effect element, and method of adjusting the same

A magnetic field detector includes: a magnet; a detecting magnetic resistance element having a layer structure containing a ferromagnetic layer, the resistance being changed when a direction of magnetization of the ferromagnetic layer is changed; and a reference magnetic resistance element having substantially the same layer structure as that of the detecting magnetic resistance element. A magnetic field, the magnetic intensity of which is higher than the saturation magnetic field, is impressed by the magnet in a direction which is sensed by the ferromagnetic layer of the reference magnetic resistance element.

Magnetic field detector and manufacturing method thereof

A high-frequency current detector of a plasma processing apparatus detects a high-frequency current produced when high-frequency power in the range that does not cause generation of plasma in a chamber is supplied from a high-frequency power supply source to the chamber. The high-frequency current detector outputs the detected high-frequency current to a computer. The computer compares the high-frequency current received from the high-frequency current detector with a reference high-frequency current. When the received high-frequency current matches the reference high-frequency current, the computer determines that the process performance is normal. Otherwise, the computer determines that the process performance is abnormal. In this way, high-frequency characteristics specific to the apparatus are detected and the process performance are evaluated based on the detected high-frequency characteristics.

Plasma processing apparatus capable of evaluating process performance

In a wafer treatment apparatus, a hydrofluoric acid gas supply pipe and an evacuation pipe are connected to a chamber storing a wafer for performing prescribed treatment. A control part is provided for controlling supply of hydrofluoric acid gas. The control part sets a time for supplying the hydrofluoric acid gas into the chamber to be longer than a time up to starting of etching of a reaction product and shorter than a time up to starting of etching of a gate insulator film. Thus, only the reaction product can be substantially etched without etching the gate insulator film.

Method of fabricating a semiconductor device including time-selective etching process

A plasma processing apparatus mainly comprises a processing chamber (,) formed by a vacuum vessel, a magnetic field forming coil (,) arranged around the processing chamber for forming a rotating magnetic field and gas supply means (,) supplying various gases to the processing chamber (,). The processing chamber (,) is divided into a reaction chamber (,) forming plasma with a partition wall (,) and a buffer chamber (,) discharging externally supplied gases with pressure difference. The reaction chamber (,) includes a high-frequency electrode arranged oppositely to the buffer chamber (,). The gas supply means (,) includes pulse gas valves (,and,) for pulsatively supplying gases to the processing chamber (,). Thus provided are a plasma processing method and a plasma processing apparatus capable of uniformly processing a wafer having a large diameter and reducing RIE lag with respect to a fine etching pattern.

Plasma processing method and plasma processing apparatus

Growing community of inventors

Tokyo, Japan

Masakazu Taki