Hitachi-kokusai Electric Inc.

Olympus Optical Company, Ltd.

Kokusai Electric Corporation

Teitokusha Co., Ltd.

Kokusai Electric Co., Ltd.

Masakazu Shimada

Akira Hayashida

Masaaki Ueno

Kenji Tanaka

Yukinori Aburatani

Seiyo Nakashima

Tomoyuki Yamada

Kimio Kitamura

Kenichi Suzaki

Masashi Sugishita

Toshimitsu Miyata

Takeshi Kasai

Atsushi Morikawa

Jyunichi Nishihara

Yuji Takebayashi

Takeo Hanashima

Hirohisa Yamazaki

Takashi Nagano

Takashi Nogami

Shinobu Sugiura

Yoshimasa Nagatomi

Satoshi Aizawa

Haruo Morikawa

Mitsuhiro Nagata

Masanori Sakai

Kenji Kawasaki

Tomoshi Taniyama

Yoshihiro Shimada

Takashi Yoneyama

Atsuhiro Tsuchiya

Yukinao Kaga

Hideaki Endo

Michio Sato

Hisao Kitagawa

Keiji Shimizu

Atsushi Hirano

Jitsunari Kojima

Nobuyuki Nagasawa

Takenori Oka

Osamu Morita

Kiyonobu Kurata

Mitsuhiro Hirano

Noriyuki Isobe

Hidehiro Yanagawa

Yukiko Saeki

Hiroyuki Nishiuchi

Kazumi Nikaido

Yoshikazu Hisajima

Yoshitaka Kawahara

A vaporization system includes a vaporization chamber having a first portion and a second portion. A first fluid supply part is connected to the first portion of the vaporization chamber, and configured to supply a mixed fluid in which a first carrier gas and a liquid precursor are mixed, toward the second portion. A second fluid supply part is configured to supply a second carrier gas toward the mixed fluid at the second portion.

Vaporizer, substrate processing apparatus and method for manufacturing semiconductor device

Substrate processing apparatus, method for manufacturing semiconductor device and vaporizer

A substrate processing apparatus, includes: a substrate holder including at least one support column to which a mounting part on which a substrate is mounted is attached and at least one auxiliary support column to which the mounting part is not attached, wherein the substrate holder is configured such that a diameter of the auxiliary support column is smaller than a diameter of the support column, and wherein the substrate holder is configured such that when the substrate is held by the mounting part, an end portion of the substrate and each of the support column is spaced apart from each other by a predetermined length.

Substrate processing apparatus, substrate holder and mounting tool

There is provided a technique that includes: a process chamber accommodating substrate; a storage tank including bottom portion having recess and wall portion and storing liquid precursor; a vaporizing part vaporizing the stored liquid precursor to generate precursor gas; a supply part supplying the generated precursor gas to the process chamber; a sensor disposed in the recess and detecting liquid level of the stored liquid precursor; a replenishment part replenishing the liquid precursor in the storage tank; and a controller controlling the supply part to supply the precursor gas to the process chamber to perform a substrate processing process for processing the substrate, and controlling, each time when the substrate processing process is performed a predetermined number of times, the replenishment part, based on the detected liquid level, to replenish the liquid precursor in the storage tank so that the liquid level becomes a predetermined level.

Substrate processing apparatus, liquid precursor replenishment system, and method of manufacturing semiconductor device

A substrate processing apparatus includes a process chamber in which a substrate is accommodated; a source gas supply system configured to supply a source gas onto the substrate; first and second reactive gas supply systems configured to supply a reactive gas onto the substrate via first and second interconnected reactive gas supply pipes, wherein a gas storage unit is installed at the second reactive gas supply pipe to store the reactive gas and the reactive gas is supplied onto the substrate via the gas storage unit; and a control unit configured to control the source gas supply system to supply the source gas onto the substrate and to control the first and second reactive gas supply systems to supply the reactive gas onto the substrate via the first and second reactive gas supply pipes.

Substrate processing apparatus, method of manufacturing semiconductor device and non-transitory computer-readable recording medium

A heating apparatus comprises a heating element, an inner shell for supporting the heating element, an outer shell disposed along the outer boundary of the inner shell, a cooling medium passage for conveying a cooling medium between the inner shell and the outer shell, a first opening provided in the inner shell, a second opening provided in the outer shell, and a partition arranged to extend from the first opening to the second opening for developing at least a space separated from the cooling medium passage and between the inner shell and the outer shell. The heating apparatus further comprises an insulator for shutting up a gap provided between the partition and the second opening.

Heating apparatus, substrate processing apparatus employing the same, method of manufacturing semiconductor devices, and insulator

A substrate processing apparatus suppresses vibration of a cover when unloading a boat from a process pipe. The apparatus comprises a boat for placing a substrate, a process pipe configured to accommodate the boat, a cover having the boat placed thereon, the cover configured to open and close a furnace port installed on a lower end of the process pipe, a motor to drive an elevation mechanism which moves the cover upward and downward, a sealing member to seal a space between the cover and the process pipe, and a controller to control motor speed and limit motor torque while the cover moves from the furnace port to a predetermined position. The substrate is maintained at a rest position in the boat during a recovery from a deformation of the cover occurring when separating the sealing member from the cover surface or the process pipe surface.

Substrate processing apparatus and method of manufacturing semiconductor device

A substrate processing method in a processing chamber, has: accommodating a substrate into a processing chamber; and processing the substrate in the processing chamber on the basis of a correlation of a preset temperature of a heating device, a flow rate of fluid supplied by a cooling device and a temperature deviation between the center side of the substrate accommodated in the processing chamber and the outer peripheral side of the substrate while the substrate accommodated in the processing chamber is optically heated from an outer periphery side of the substrate at a corrected preset temperature by the heating device and the fluid is supplied to the outside of the processing chamber at the flow rate based on the correlation concerned to cool the outer peripheral side of the substrate by the cooling device.

Substrate processing method and film forming method

A substrate processing apparatus has: a process chamber in which a substrate is processed; a heating device that optically heats the substrate accommodated in the process chamber from an outer periphery side of the substrate; a cooling device that cools the outer periphery side of the substrate by flowing a fluid in a vicinity of an outer periphery of the substrate optically heated by the heating device; a temperature detection portion that detects a temperature inside the process chamber; and a heating control portion that controls the heating device and the cooling device in such a manner so as to provide a temperature difference between a center portion of the substrate and an end portion of the substrate while maintaining a temperature at the center portion at a pre-determined temperature according to the temperature detected by the temperature detection portion.

Substrate processing apparatus and substrate processing method

In a substrate processing apparatus, a process vessel is configured to accommodate and process a substrate held at a horizontal position. A gas introduction port is installed at a periphery of a first side of the process vessel and configured to introduce gas into the process vessel from a lateral direction of the substrate. A gas exhaust port is installed at a second side of the process vessel which is opposite to the first side, and is configured to exhaust gas inside the process vessel from a lateral direction of the substrate. A slope part is installed between the gas introduction port and the gas exhaust port inside the process vessel, and is configured to guide a flow path of the gas introduced into the process vessel.

Substrate processing apparatus, method for manufacturing semiconductor device, and process tube

A heating apparatus comprises heating elements arranged of a sheet form and having notches or through holes provided therein, a side wall member made of an electrically conductive material and arranged to surround and define the heating space, and holding members disposed at the heating space side of the side wall member for holding at one end the heating elements. Also, extending members are provided, each member comprising an extending-through portion arranged to project from the heating space side of the side wall member and extend through the notch or through hole between both ends in the heating element and projected portions arranged to project at both, front and back, sides of the heating element from the extending-through portion in a direction, which is orthogonal to the extending direction of the extending-through portion, thus to inhibit the displacement of the heating elements along the extending direction.

Heating apparatus, substrate processing apparatus employing the same, method of manufacturing semiconductor devices, and extending member

A substrate processing apparatus comprises a processing chamber for storing a boat supporting multiple substrates and for processing the multiple substrates, a heater unit installed around the processing chamber for heating the substrates, and a coolant gas supply nozzle including a pipe section extending perpendicular to a main surface of the substrate supported in the boat stored in the processing chamber, and a spray hole formed on the pipe section for spraying coolant gas to at least two of the multiple substrates, wherein the coolant gas supply nozzle is formed so that the cross sectional area of the pipe section in the area where the spray hole is formed is larger than the total opening area of the spray hole.

Substrate processing apparatus, coolant gas supply nozzle and semiconductor device manufacturing method

A heating apparatus comprises a wall for surrounding and defining a heating space, a heating element mounted on the inner side of the wall, reflecting members for reflecting the heat emitted from the heating element. Also, a moving unit joined to one end of each of the reflecting members for moving the reflecting members. Moreover, pivotal members joined to the reflecting members beside more their respective other side than one side of the reflecting members for controlling as pivots the movement of the reflecting member driven by the moving unit.

Heating apparatus, substrate processing apparatus, and method of manufacturing semiconductor devices

Semiconductor manufacturing equipment

Growing community of inventors

Toyama, Japan

Masakazu Shimada