Sony Corporation

Masakazu Muroyama

Ichiro Saito

Motohiro Toyota

Toshiki Shimamura

Masashi Bando

Junichi Sato

Shingo Kadomura

Shintarou Hirata

Masaki Murata

Masayoshi Sasaki

Yasushi Morita

Masashi Somezawa

Yasuharu Ujiie

Kouji Inoue

Hideyuki Kumita

Yoshinobu Ninomiya

Norihito Kobayashi

Hideyuki Kito

Yu Kato

Yuya Kumagai

Akira Hashimoto

Takao Yagi

Eri Igarashi

Sachiko Sakaigawa

Masayoshi Sugiyama

There is provided an imaging element that has a stacked structure of a first electrode, an organic photoelectric conversion layer, and a second electrode. A first organic material layer and a second organic material layer are formed between the first electrode and the organic photoelectric conversion layer from the first electrode side.

Photoelectric conversion element, imaging element, stacked-type imaging element, and solid-state imaging apparatus

There is provided an imaging device including an upper electrode; a lower electrode; a photoelectric conversion layer disposed between the upper electrode and the lower electrode; and a first organic semiconductor material including an indolocarbazole derivative and disposed between the upper electrode and the lower electrode. Further, there is provided an electronic apparatus including an imaging device that includes an upper electrode; a lower electrode; a photoelectric conversion layer disposed between the upper electrode and the lower electrode; and a first organic semiconductor material including an indolocarbazole derivative and disposed between the upper electrode and the lower electrode.

Imaging element, stacked-type imaging element, imaging apparatus and electronic apparatus

There are provided a 6,12-dioxaanthanthrene derivative which is an organic semiconductor material capable of improving resistance to mechanical deformation, an organic semiconductor element, and a method for manufacturing the organic semiconductor element. The 6,12-dioxaanthanthrene derivative is represented by structural formula (1). Rand Rare photopolymerizable unsaturated groups. Rand Rare non-photopolymerizable substituents.

6,12-dioxaanthanthrene derivative, organic semiconductor element, and method for manufacturing organic semiconductor element

A process for producing a cold cathode field emission device. A cathode electrode is formed on a front surface of a support member that transmits exposure light. An insulating layer is formed on an entire surface. A gate electrode is formed on the insulating layer. The support member is irradiated with exposure light from a back surface side of the support member through the hole as a mask for exposure. An electron-emitting-portion-forming-layer composed of a photosensitive material is formed at least inside the opening portion. The support member is irradiated with exposure light from a back surface side of the support member through the hole as a mask for exposure.

Cold cathode field emission device and process for the production thereof, and cold cathode field emission display and process for the production thereof

A cold cathode field emission device comprising a cathode electrodeformed on a supporting member, a gate electrodewhich is formed above the cathode electrodeand has an opening portion, and an electron emitting portionformed on a surface of a portion of the cathode electrodewhich portion is positioned in a bottom portion of the opening portion, said electron emitting portioncomprising a carbon-group-material layer, and said carbon-group-material layerbeing a layer formed from a hydrocarbon gas and a fluorine-containing hydrocarbon gas.

Manufacturing method of an electron emitting apparatus

A process for producing a cold cathode field emission device. A cathode electrode is formed on a front surface of a support member that transmits exposure light. An insulating layer is formed on an entire surface. A gate electrode is formed on the insulating layer. The support member is irradiated with exposure light from a back surface side of the support member through the hole as a mask for exposure. An electron-emitting-portion-forming-layer composed of a photosensitive material is formed at least inside the opening portion. The support member is irradiated with exposure light form a back surface side of the support member through the hole at a mask for exposure.

The semiconductor device comprising a lower conductive layer ( ) and an upper conductive layer ( ) which are formed via an interlayer insulator ( ) on a substrate ( ), wherein the interlayer insulator ( ) has a stack structure of an organic resin layer ( ) formed on the lower conductive layer ( ) and one or more high water-resistant insulating film ( ) having a specific Si content formed on the organic resin layer ( ). Even when the interlayer insulator realized by an organic resin insulating film of a low dielectric constant is used, characteristic and realizability is prevented from being deteriorated.

Semiconductor device

An SiOF layer is formed by using as raw material an organic Si compound having Si&mdash;F bonds. Since an organic Si compound is used as raw material, an intermediate product being formed during the formation of an SiOF layer is liable to polymerize and has fluidity. Moreover, since the organic Si compound has Si&mdash;F bonds, low in bond energy, and is thus capable of easily getting only Si&mdash;F bonds separated, the SiOF layer is prevented from getting contaminated by reaction by-products and fluorine can be introduced into the SiOF layer in stable fashion. Therefore, an insulator layer, low in dielectric constant, low in hygroscopicity and excellent in step coverage, can be formed by using a low powered apparatus.

Method for making semiconductor device

A polishing slurry includes polishing abrasive grains and a polishing liquid containing at least one kind of a fatty acid and a fatty acid ester. The fatty acid is at least one kind selected from a group consisting of oleic acid, myristic acid, and stearic acid. The fatty acid ester is at least one kind selected from a group consisting of butyl stearate, hexyl stearate, heptyl stearate, butyl oleate, hexyl oleate, heptyl oleate, butyl myristate, hexyl myristate, and heptyl myristate. The polishing slurry is used for polishing a surface to be polished of a substance to be polished such as a wafer by bringing the surface to be polished into slide-contact with a polishing surface of a polishing plate mounted to a polishing table while supplying the polishing slurry on the polishing surface. The polishing slurry solves such a related art problem that upon CMP of an interlayer insulating film having a step, a polishing pressure applied to a lower portion of the step becomes equal to that applied to an upper portion of the step, to make the polishing rate at the lower portion of the step nearly equal to that at the upper portion of the step, thereby making it difficult to flatly polish the interlayer insulating film.

Polishing slurry and polishing method using the same

A surface of a substrate is coated with a coating agent to form a coating film. The coating agent contains a material capable of generating moisture (for example, hydrogen-silsesquioxane or hydroxysilazane) and an additive capable of generating a gas by reaction with the moisture thus generated (for example, a material containing an isocyanate group). By heat-treatment of the substrate, moisture is generated from the coating film and a gas is discharged from the coating film by reaction between the moisture thus generated and the additive, to form fine voids in the coating film. Such a coating film is converted into a dielectric film having a low dielectric constant.

Method of producing dielectric film

A polishing method and apparatus applied for planarizing a substrate presenting surface step differences in a production process for a substrate of a semiconductor device. The substrate is ground by being brought into sliding contact with a polishing cloth applied taut on a rotary table as a polishing agent is supplied to the polishing cloth. The grinding for the substrate is carried out until partway under a first condition in which the polishing cloth is ground under a pre-set condition by being slidingly contacted with grinding abrasive grains of the rotary grinding head so that surface roughness of the polishing cloth is maintained at a substantially constant value equal to the surface roughness value prevailing prior to start of grinding. The residual portion of the polishing is carried out under a second condition in which the surface roughness of the polishing cloth is gradually lowered by terminating the grinding. Polishing with superior planarity may be achieved in a shorter time.

Method and apparatus for chemical/mechanical polishing

In forming a wiring layer on a semiconductor stepped substrate (wafer) 15, the wiring layer is polished by using a slurry 12 which contains polishing particles treated in advance with a surface treatment agent containing at least an amino group. During polishing, a uniformity of polishing of the surface of the wafer 15 is maintained by rotating a wafer carrier rotation shaft 17 and a platen rotation shaft 14 while supplying slurry 12 through a guide tube 11. Consequently, scratches are prevented from being caused on surfaces of a multilayer wiring layer and an interlayer insulation film on a semiconductor device and, in addition, the wiring layer can be stably polished.

Growing community of inventors

Kanagawa, Japan

Masakazu Muroyama