Semiconductor Energy Laboratory Co., Ltd.

Masakazu Murakami

Shunpei Yamazaki

Hideaki Kuwabara

Toru Takayama

Junya Maruyama

Masaaki Hiroki

Satoshi Seo

Hisashi Ohtani

Ryoji Nomura

Toshiji Hamatani

Yumiko Ohno

Hiroko Abe

Naomi Kawakami

Kiyoshi Kato

Junichiro Sakata

Yoshiaki Oikawa

Taketomi Asami

Koji Moriya

Osamu Nakamura

Shinji Maekawa

Keitaro Imai

Makoto Furuno

Although an ink jet method known as a method of selectively forming a film of a high molecular species organic compound, can coat to divide an organic compound for emitting three kinds (R, G, B) of light in one step, film forming accuracy is poor, it is difficult to control the method and therefore, uniformity is not achieved and the constitution is liable to disperse. In contrast thereto, according to the invention, a film comprising a high molecular species material is formed over an entire face of a lower electrode connected to a thin film transistor by a coating method and thereafter, the film comprising the high molecular species material is etched by etching by plasma to thereby enable to selectively form a high molecular species material layer. Further, the organic compound layer is constituted by a material for carrying out luminescence of white color or luminescence of single color and combined with a color changing layer or a coloring layer to thereby realize full color formation.

Light emitting apparatus and method of fabricating the same

A light emitting device having a high definition, a high aperture ratio and a high reliability is provided. The present invention realizes a high definition and a high aperture ratio for a flat panel display of full colors using luminescent colors of red, green and blue without being dependent upon the film formation method and deposition precision of an organic compound layer by forming the laminated sectionsby means of intentionally and partially overlapping different organic compound layers of adjacent light emitting elements. Moreover, the protective filmcontaining hydrogen is formed and the drawback in the organic compound layer is terminated with hydrogen, thereby realizing the enhancement of the brightness and the reliability.

Light emitting device, method of preparing the same and device for fabricating the same

To provide a light emitting device high in reliability with a pixel portion having high definition with a large screen. According to a light emitting device of the present invention, on an insulator () provided between pixel electrodes, an auxiliary electrode () made of a metal film is formed, whereby a conductive layer () made of a transparent conductive film in contact with the auxiliary electrode can be made low in resistance and thin. Also, the auxiliary electrode () is used to achieve connection with an electrode on a lower layer, whereby the electrode can be led out with the transparent conductive film formed on an EL layer. Further, a protective film () made of a film containing hydrogen and a silicon nitride film which are laminated is formed, whereby high reliability can be achieved.

Display device having sealing material

An evaporation apparatus with high utilization efficiency for EL materials and excellent film uniformity is provided. The invention is an evaporation apparatus having a movable evaporation source and a substrate rotating unit, in which the space between an evaporation source holder and a workpiece (substrate) is narrowed to 30 cm or below, preferably 20 cm, more preferably 5 to 15 cm, to improve the utilization efficiency for EL materials. In evaporation, the evaporation source holder is moved in the X-direction or the Y-direction, and the workpiece (substrate) is rotated for deposition. Therefore, film uniformity is improved.

Fabrication system and a fabrication method of a light emitting device

The object of the invention is to provide a method for fabricating a semiconductor device having a peeled layer bonded to a base material with curvature. Particularly, the object is to provide a method for fabricating a display with curvature, more specifically, a light emitting device having an OLED bonded to a base material with curvature. An external force is applied to a support originally having curvature and elasticity, and the support is bonded to a peeled layer formed over a substrate. Then, when the substrate is peeled, the support returns into the original shape by the restoring force, and the peeled layer as well is curved along the shape of the support. Finally, a transfer object originally having curvature is bonded to the peeled layer, and then a device with a desired curvature is completed.

Method for fabricating a semiconductor device by bonding a layer to a support with curvature

A semiconductor device with significantly low off-state current is provided. An oxide semiconductor material in which holes have a larger effective mass than electrons is used. A transistor is provided which includes a gate electrode layer, a gate insulating layer, an oxide semiconductor layer including a hole whose effective mass is 5 or more times, preferably 10 or more times, further preferably 20 or more times that of an electron in the oxide semiconductor layer, a source electrode layer in contact with the oxide semiconductor layer, and a drain electrode layer in contact with the oxide semiconductor layer.

Semiconductor device

Semiconductor device having aluminum-containing layer between two curved substrates

Light emitting device having insulator between pixel electrodes and auxiliary wiring in contact with the insulator

(OBJECT) The object is to provide a lightened semiconductor device and a manufacturing method thereof by pasting a layer to be peeled to various base materials. (MEANS FOR SOLVING THE PROBLEM) In the present invention, a layer to be peeled is formed on a substrate, then a seal substrate provided with an etching stopper film is pasted with a binding material on the layer to be peeled, followed by removing only the seal substrate by etching or polishing. The remaining etching stopper film is functioned as a blocking film. In addition, a magnet sheet may be pasted as a pasting member.

Semiconductor device and manufacturing method thereof

Light emitting device

In this embodiment, an interval distance between a deposition source holderand an object on which deposition is performed (substrate) is reduced to 30 cm or less, preferably 20 cm or less, more preferably 5 to 15 cm, and a deposition source holderis moved in an X direction or a Y direction in accordance with an insulator (also called a bank or a barrier) in deposition, and a shutteris opened or closed to form a film. The present invention can cope with an increase in size of a deposition apparatus with a further increase in size of a substrate in the future.

Method of fabricating light-emitting device and apparatus for manufacturing light-emitting device

Growing community of inventors

Kanagawa, Japan

Masakazu Murakami