Canon Kabushiki Kaisha

Masakazu Morishita

Chiori Mochizuki

Takamasa Ishii

Minoru Watanabe

Keiichi Nomura

Tadao Endo

Osamu Tsujii

Isao Kobayashi

Toshikazu Tamura

Shinichi Takeda

Noriyuki Kaifu

Eiichi Takami

Akira Tago

Akira Funakoshi

Shinichi Hayashi

Toshiaki Sato

Toshiko Morii

Toru Koizumi

Shigetoshi Sugawa

Masaru Sakamoto

Shigeru Nishimura

Satoshi Okada

Satoshi Shimizu

Tatsuya Yamazaki

Masahiko Okunuki

Shin Kikuchi

Hideki Nonaka

Akira Hirai

Hidemasa Mizutani

Seiji Hashimoto

Kazuaki Tashiro

Hayao Ohzu

Takahiro Numai

Eiji Shirai

Chiori Mochizuku

Keiichi Momura

A mammography apparatus includes a detector that detects X-rays transmitted through a breast, and an optically transparent or semitransparent pressing panel for pressing the breast. The apparatus further includes a near infrared ray source that provided between the X-ray source and the pressing panel and arranged in a two-dimensional shape in alignment with the pressing panel, and that is movable between a first position in close contact with the pressing panel and a second position outside an X-ray image capture region. Near infrared image capture is carried out using the near infrared ray source by causing the near infrared ray source to be in the first position, and the near infrared ray source is caused to retract to the second position when carrying out X-ray image capture using the X-ray source.

Mammography apparatus

In order to provide a photoelectric conversion apparatus, which is an apparatus excellent in reading speed, high S/N, high tone level, and low cost, the photoelectric conversion apparatus has a photoelectric conversion circuit section comprising a plurality of photoelectric conversion elements, switching elements, matrix signal wires, and gate drive wires arranged on a same substrate in order to output parallel signals, a driving circuit section for applying a driving signal to the gate drive wire, and a reading circuit section for converting the parallel signals transferred through the matrix signal wires to serial signals to output them, wherein the reading circuit section comprises at least one analog operational amplifier connected with each of the matrix signal wires, transfer switches for transferring output signals from the respective matrix signal wires, output through each amplifier, reading capacitors, and reading switches for successively reading the signals out of the reading capacitors in the form of serial signals.

Photoelectric conversion apparatus and photoelectric conversion system having the apparatus

A solid-state image pickup device according to the present invention has a plurality of photoelectric conversion elements and a plurality of switching elements. The photoelectric conversion element is formed above at least one switching element, and a shielding electrode layer is disposed between the switching elements and the photoelectric conversion elements. Further, a radiation image pickup device according to the present invention has a radiation conversion layer for directly converting radiation into electric charges, and a plurality of switching elements, and has the radiation conversion layer formed above one or more switching elements, and a shielding electrode layer disposed between the switching elements and the radiation conversion layer.

Solid-state image pickup device and radiation image pickup device

A radiation imaging apparatus comprises a pixel region, on an insulating substrate, including a plurality of pixels arranged in a matrix, each pixel having a conversion elementthat converts radiation into electric charges and a switching elementconnected to the conversion element. The conversion elementhas an upper electrode layer, a lower electrode layer, a semiconductor layerarranged between the upper electrode layerand the lower electrode layer. The upper electrode layeror the lower electrode layerhas an openingat least within a region where the semiconductor layeris arranged.

Radiation imaging apparatus and radiation imaging system

Sensitivity is freely changeable to another one in correspondence to a photographing mode, and both still image photographing and moving image photographing for example which are largely different from each other in dosage of exposure to radiation and which are also different from each other in required sensitivity are carried out so as to meet that request. A source or drain electrode of a TFTis connected to a signal output circuitthrough a signal lineand an IC. A source/drain of a TFTis connected to the signal output circuitthrough a signal lineand the IC. Thus, in each pixel, any one of the signal linesandis freely selectable when a signal is read out.

Radiation image pick-up device and method therefor, and radiation image pick-up system

To improve a sensor resetting method and thereby implement a high rate at which a moving image is read, the invention provides an image pickup apparatus and a radiation image pickup apparatus including: a plurality of pixels arranged on a substrate in row and column directions, each pixel having a conversion element and a transfer switching element; a drive wiring connected to a plurality of the transfer switching elements in the row direction; and a conversion element wiring connected to a plurality of the conversion elements in the row direction, wherein a reset switching element is disposed between the conversion element wiring and a reset wiring for supplying a reset voltage for resetting the conversion element, and a bias switching element is disposed between the conversion element wiring and a bias wiring for supplying a bias voltage for operating the conversion element.

Image pickup apparatus and radiation image pickup apparatus

In a solid state image pickup apparatus with a photodetecting device and one or more thin film transistors connected to the photodetecting device formed in one pixel, a part of the photodetecting device is formed over at least a part of the thin film transistor, and the thin film transistor is constructed by a source electrode, a drain electrode, a first gate electrode, and a second gate electrode arranged on the side opposite to the first gate electrode with respect to the source electrode and the drain electrode, and the first gate electrode is connected to the second gate electrode every pixel, thereby, suppressing an adverse effect of the photodetecting device on the TFT, a leakage at turn-off TFT, variation in a threshold voltage of the TFT due to an external electric field, and accurately transferring photo carrier to a signal processing circuit.

Solid state image pickup apparatus and radiation image pickup apparatus

A radiation reader including a conversion device, and a method of driving the radiation reader. The conversion device includes (a) a pixel including a conversion device for converting an incident radiation into an electric charge, and (b) a reading circuit including at least one field effect transistor for reading the electric charge from the pixel in an amplifying manner as a signal containing a noise. The reading circuit includes first storage means for storing the signal containing the noise, second storage means for storing the noise, and processing means for deriving an output signal not containing the noise based on a first output from the first storage means and a second output from the second storage means.

Photoelectric converter and radiation reader

In an image pick-up apparatus, a plurality of pixels, each pairing a semiconductor conversion element for converting an incident electromagnetic wave to an electric signal and a thin film transistor connected to the semiconductor conversion element, is arranged in a two-dimensional state on a substrate. The image pick-up apparatus includes gate wiring to which gate electrodes of thin film transistors of a plurality of pixels arranged in one direction are commonly connected, and signal wiring to which source electrodes or drain electrodes of thin film transistors of a plurality of pixels arranged in a direction different from the one direction are commonly connected on the substrate. Protection layers are arranged on the thin film transistors, the gate wiring and the signal wiring. The protection layers formed at least at the same time. Then, the protection layers are removed in at least a part or all of regions in which the semiconductor conversion elements are formed.

Image pick-up apparatus and manufacturing method thereof, radiation image pick-up apparatus, and radiation image pick-up system

Growing community of inventors

Hiratsuka, Japan

Masakazu Morishita