Fujisawa Pharmaceutical Company, Ltd.

Hitachi, Ltd.

Showa Denko K.k.

Kyowa Vacuum Engineering, Ltd.

Canon Kabushiki Kaisha

Denso Corporation

Kabushiki Kaisha Toyota Chuo Kenkyusho

Showa Denko Kabushiki Kaisha

Kanesa Miso Kabushiki-kaisha

Japan Aviation Electronics Industry, Limited

Nec Display Solutions, Ltd.

Astellas Pharma Gmbh

Fdk Corporation

Satake Corporation

Masakazu Kobayashi

Ikuo Ueda

Tadashi Kitaguchi

Mineo Niwa

Kouichi Tamura

Takao Takaya

Hisashi Takasugi

Takashi Masugi

Hiromu Kochi

Yoshimasa Saito

Hisashi Yamada

Hiroshi Sakai

Akira Sakawaki

Yasushi Urakami

Hitoshi Sasaki

Masanori Yamada

Hiroyuki Maezawa

Hiroki Ono

Itaru Gunjishima

Kazumasa Saito

Yoshiko Ueda

Yoshihiko Futamura

Yoko Takata

Tatsuo Yamashita

Konomi Harashima

Jouji Notani

Masako Hayashi

Koh Harashima

Kazumi Naito

Takuya Okamoto

Teruo Kyoto Oku

Shuzo Iwanaga

Hirokazu Tanaka

Koichi Ishida

Masaaki Matsuo

Hiroshi Akimoto

Norihito Hiasa

Kenji Shimizu

Akihiko Kato

Osamu Nakaguti

Tatsundo Aoshima

Yoshinari Sato

Katsumi Arai

Kozo Sawada

Ayumu Adachi

Yuji Goto

Hiroshi Nojima

Akio Kuroda

Takuji Nakano

Yoshinori Ishii

Kazuhiko Ohne

Tomohiro Shonai

Yasufumi Uchiyama

Yuichiro Nagashima

Masayuki Nishikata

Suminori Umio

Toshio Nagashima

Masanori Nakanishi

Fumiki Yamada

Chihiro Yamamoto

Atsushi Tsuda

Keisuke Shigetoh

Hiro Mochizuki

Masato Kokubu

Shigeki Uebayashi

Hui Yang

Tsutomu Kaizu

Kenji Abo

Tetsuya Uehara

Yuji Osawa

Kazuyuki Ohtsuka

Yusuke Kanzawa

Hiroichi Ariyama

Tomohiro Fujisawa

Shinzo Fujii

Yoichiro Kawano

Akira Nagashima

Yoshimitsu Nakajima

Naomi Hosogai

Atsushi Nomoto

Yohei Tsujimoto

Keizo Sogabe

Michio Yoshino

An image processing method includes generating a first image by inputting a captured image, which has been acquired by imaging using an optical system, into a machine learning model, acquiring information on optical performance of the optical system, and generating a second image based on the captured image, the first image, and first weight information. The first weight information is generated based on the information on the optical performance and information on a saturated area in the captured image.

Image processing method, image processing apparatus, image processing system, and memory medium

An all-solid-state battery includes an electrode body in which a cathode layer that contains a cathode active material and a solid electrolyte, an electrolyte layer that is formed of the solid electrolyte, and an anode layer that contains an anode active material and the solid electrolyte are stacked in this order in an up-down direction, in which the cathode active material is a compound represented by a chemical formula LiFeMPAO, contains at least one metal of Ti, V, Cr, Ni, and Co as the M in the chemical formula, and contains at least one element of B, C, Al, Si, Ga, and Ge as the A in the chemical formula, the x in the chemical formula satisfies 0.8<x≤1, the y in the chemical formula satisfies 0≤y≤0.07, and the anode active material is an anatase titanium oxide represented by a chemical formula TiO.

All-solid-state battery

An image processing method for generating an estimated image in which a defocus blur shape in a captured image is corrected includes a first step of acquiring input data including the captured image and shape designating information that designates a defocus blur shape in the estimated image, and a second step of inputting the input data to a machine learning model and of generating the estimated image.

Image processing method, storage medium, image processing apparatus, learned model manufacturing method, and image processing system

A liquid ejection head including recording element substrates each including ejection opening rows in which ejection openings ejecting liquid are arranged, the plurality of ejection opening rows being juxtaposed in a relative movement direction with respect to the printed medium. In the relative movement direction of the printed medium when the printed medium is viewed from the liquid ejection head, and in the plurality of ejection opening rows provided in the recording element substrate, among the plurality of recording element substrates, positioned on an upstream side in the relative movement direction, arrangement intervals of ejection openings in an end area of an ejection opening row positioned on a most upstream side in the relative movement direction are smaller than arrangement intervals of ejection openings in an end area of an ejection opening row positioned on a most downstream side in the relative movement direction.

Liquid ejection head and recording apparatus

This method for producing a SiC single crystal includes a first growth step of growing a crystal from a seed crystal in a direction that is substantially orthogonal to the &#x3c;0001&#x3e; direction, a second growth step of growing the crystal in a direction that is substantially orthogonal to the &#x3c;0001&#x3e; direction and substantially orthogonal to the direction of crystal growth in the first growth step, a third growth step of growing the crystal along the direction of crystal growth in the first growth step but in the opposite orientation to the orientation of crystal growth in the first growth step, and a fourth growth step of growing the crystal along the direction of crystal growth in the second growth step but in the opposite orientation to the orientation of crystal growth in the second growth step.

Method for producing SiC single crystal, SiC single crystal, and SiC ingot

A management apparatus, which is configured to manage at least one storage system, includes a processor and a memory. Each of the at least one storage apparatus includes a plurality of volumes, each of which stores at least one OS. The processor is configured to: determine, for each of the plurality of volumes, an OS type and version of a representative OS of the each of the plurality of volumes; select, from among the plurality of volumes, a plurality of volumes having representative OSes that share the same OS type and major version; and include the selected plurality of volumes in one deduplication group made up of volumes among which deduplication is to be executed.

Management apparatus for managing and reduplication of volumes of a storage system with respect to OS type

Provided is a display device that has a usage validity period and confirms that the device is within the usage validity period when it is used, and can be improved in usefulness and can be used quickly, as well as a usage management method and program for the display device. The display device includes: a real-time clock; and, a control unit that, upon receiving a video display-ON signal for turning on video display under the condition that the status of the real-time clock is invalid, displays video corresponding to an input video signal.

Display device, usage management method and program of a display device

A SiC single crystal includes, in a plane substantially parallel to a c-plane thereof, a region (A) in which edge dislocations having a Burgers vector (A) in a specific direction are unevenly distributed, and a region (B) in which basal plane dislocations having a Burgers vector (B) in a specific direction are unevenly distributed. The region (A) is located in a &#x3c;1-100&#x3e; direction with respect to a facet portion, while the region (B) is located in a &#x3c;11-20&#x3e; direction with respect to the facet portion. A SiC substrate is produced by cutting a SiC wafer from the SiC single crystal in a direction substantially parallel to the c-plane, and cutting the SiC substrate from the SiC wafer such that the SiC substrate mainly contains one of the region (A) and the region (B). A SiC device is fabricated using the SiC substrate.

SiC single crystal, SiC wafer, SiC substrate, and SiC device

A waterproof connector is configured in such a manner that the waterproof properties between a housing and electrically conductive members, such as a shell and contacts, are improved. This waterproof connector includes a housing having an insulating resin and at least one electrically conductive member formed integrally with the housing. The electrically conductive member has a connection section which is exposed from the housing and connected to a mating connector, a mounting section which is exposed from the housing and mounted to a circuit board, and a holding section which connects the connection section and the mounting section, and which is embedded in the housing. A waterproof shaped section for blocking the entry of water along the interfaces between the holding section and the housing is formed on the surface of the holding section.

Waterproof connector with integrated shell and contact into housing

The entirety or a part of free space of a second storage device included in a host computer is used as a cache memory region (external cache) outside of a storage apparatus. If Input/Output (I/O) in the host computer is Write, a Write request is transmitted from the host computer to a storage apparatus, the storage apparatus writes data associated with the Write request into a main cache that is a cache memory region included in this storage apparatus, and the storage apparatus writes the data in the main cache into a first storage device included in the storage apparatus. The storage apparatus writes the data in the main cache into an external cache included in the host computer. If the I/O in the host computer is Read, the host computer determines whether or not Read data as target data of the Read exists in the external cache. If a result of the determination is positive, the host computer reads the Read data from the external cache.

Computer system and storage control method

When an SiC single crystal having a large diameter of a {0001} plane is produced by repeating a-plane growth, the a-plane growth of the SiC single crystal is carried out so that a ratio S(=S&#xd7;100/S) of an area (S) of a Si-plane side facet region to a total area (S) of the growth plane is maintained at 20% or less.

SiC single crystal, production method therefor, SiC wafer and semiconductor device

A surface of an anode body made of a metal material having a valve action is oxidized so as to form a dielectric layer, a conductive polymer precursor solution is stuck to the surface of the dielectric layer, the solvent is evaporated in an atmosphere of a relative humidity of 30 to 45% to be removed, electropolymerization is carried out so as to obtain a semiconductor layer having projections being 2 to 70 &#x3bc;m high on the outer surface thereof, a conductive carbon layer is laminated using a conductive carbon paste, and a conductive metal layer containing a metal conductive powder and a binder is laminated so as to obtain an element for an electronic component, and the element for an electronic component is encapsulated by a resin so as to obtain an electronic component.

Element for electronic component

Each time data is migrated, a management system stores information denoting a migration history related to the migration of the data, in history management information. The management system receives an input of an administrator-desired attribute condition combination for a migration-destination storage device, identifies all device attribute combinations conforming to this attribute condition combination, and calculates multiple migration trends based on each device attribute combination and the history management information. The management system identifies, from among the multiple migration trends, a migration trend to which a specified migration-source storage device belongs, and displays information denoting at least this identified migration trend.

Method for supporting migration destination decision and management system

A purifier is provided that is capable of uniformly sucking powder in a width direction of the sieve layers even when the purifier is configured to be provided with an air distribution chamber formed as being tapered upward and to have a horizontal cyclone provided above the air distribution chamber. The air distribution chamber is configured of paired inclined surfaces formed as being tapered upward, has a suction passage formed as a horizontal cyclone placed above the air distribution chamber. Also, a plurality of barrier walls are provided in the air distribution chamber in a direction perpendicular to a longitudinal direction of sieve layers, the air distribution chamber is sectioned by the barrier walls into a plurality of chambers, and rectifying plates are further provided to the air distribution chamber at a narrow position between the paired inclined surfaces to prevent non-uniformity of suction of powder on the sieve layers.

Purifier

This invention relates to a hematopoietic stem cell proliferating agent comprising IGF-I, a hematopoietic stem cell proliferating agent comprising IGF-I and at least one protein selected from among SCF, M-CSF, and G-CSF, and a method of growing hematopoietic stem cells which comprises culturing hematopoietic stem cells in a medium containing IGF-I and at least one protein selected from the group consisting of SCF and M-CSF. The hematopoietic stem cell proliferating agent of the invention causes hematopoietic stem cells to proliferate in the undifferentiated state whether in vivo or in vitro and can, therefore, be used for amelioration of the cytopenia induced by radiotherapy or chemotherapy using anticancer drugs, prevention of infectious diseases associated with lymphopenia, or in vitro culture for multiplication of hematopoietic stem cells and extrasomatic culture of recombinant stem cells in gene therapy.

Hematopoietic stem cell proliferating agents

Growing community of inventors

Tokyo, Japan

Masakazu Kobayashi