Nissan Chemical Industries Limited

Masakazu Kato

Keisuke Hashimoto

Tetsuya Shinjo

Yasunobu Someya

Ryo Karasawa

Hiroaki Okuyama

Tomoyuki Enomoto

Yuki Usui

Takayasu Nihira

Tomonari Nakayama

Takahiro Hamada

A method for producing a semiconductor device, which includes forming an underlayer film on a semiconductor substrate with a resist underlayer film forming composition that contains a solvent, and a polymer containing a unit structure of Formula (2):O&#x2014;Ar&#x2014;O&#x2014;Ar-T-Ar&#x2003;&#x2003;Formula (2)where Ar, Ar, and Arare individually a Carylene group or an organic group containing a heterocyclic group; at least one of Arand Aris a phenylene group; and T is a carbonyl group. The resist underlayer film forming composition has a solid content of 0.1 to 70 mass % of a total mass of the composition.

Resist underlayer film forming composition for lithography containing polyether structure-containing resin

There is provided a resist underlayer film forming composition that is used in a lithography process for the production of semiconductor devices and that can be developed with an alkaline developer for photoresists, and a method of forming a photoresist pattern by using the resist underlayer film forming composition. The resist underlayer film forming composition used in a lithography process for a production of a semiconductor device comprising: an alkali-soluble resin (a); a polynuclear phenol (b); a compound (c) having at least two vinylether groups; and a photoacid generator (d). The alkali-soluble resin (a) may be a polymer containing a unit structure having a carboxyl group, and the polynuclear phenol (b) may be a compound having 2 to 30 phenolic hydroxyl groups in the molecule.

Resist underlayer film forming composition containing low molecular weight dissolution accelerator

Whereas, conventionally, ashing had been used at the time of removal, the present invention provides a material for forming an organic hard mask that can be removed by an alkaline aqueous solution, and thus can be expected to reduce damage to the substrate at the time of the removal. A composition for forming an organic hard mask layer comprising: a polymer (A) including a structural unit of Formula (1) and a structural unit of Formula (2); a crosslinkable compound (B) including at least two of blocked isocyanate groups, methylol groups, or Calkoxymethyl groups; and a solvent (C), wherein an organic hard mask layer obtained from the composition for forming an organic hard mask layer is used at the lowest layer in a lithography process using a multi-layer film, wherein Rto Rhave the same definition as ones in the specification.

Composition for forming organic hard mask layer for use in lithography containing polymer having acrylamide structure

There is provided a composition for forming a resist underlayer film having heat resistance for use in a lithography process in semiconductor device production. A composition for forming a resist underlayer film, comprising a polymer that contains a unit structure of formula (1) and a unit structure of formula (2) in a proportion of 3 to 97:97 to 3 in molar ratio:  A method for producing a semiconductor device, including the steps of: forming an underlayer film using the composition for forming a resist underlayer film on a semiconductor substrate; forming a hard mask on the underlayer film; further forming a resist film on the hard mask; forming a patterned resist film and developing; etching the hard mask according to the patterned resist film; etching the underlayer film according to the patterned hard mask; and processing the semiconductor substrate according to the patterned underlayer film.

Composition for forming a resist underlayer film including hydroxyl group-containing carbazole novolac resin

The invention provides a positive photosensitive resin composition which is free from film reduction, swelling or peeling at the time of development with an aqueous alkaline solution and which provides a dimensionally stable patterns after curing, and of which the final cured film has a low water absorption and excellent alkaline resistance. A positive photosensitive polyimide resin composition characterized by comprising an organic solvent-soluble polyimide having repeating units represented by the formula (1):(wherein m is an integer of from 3 to 10,000, Ris a tetravalent organic group, Ris a bivalent organic group, provided that from 5 to 100 mol % of Ris a bivalent organic group having fluorine), a polyamic acid and a compound capable of generating an acid by irradiation with light.

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Toyama, Japan

Masakazu Kato