Denso Corporation

Masakazu Itoh

Takaaki Aoki

Hiroki Sakane

A semiconductor device includes a semiconductor substrate, multiple trench gate structures and an emitter region. The semiconductor substrate includes: a drift layer of a first conductivity type; a base layer of a second conductivity type disposed on the drift layer; and a collector layer of the second conductivity type, the collector layer disposed at a position opposite to the base layer with the drift layer sandwiched between the base layer and the collector layer. Each of the trench gate structures includes: a trench penetrating the base layer and reaching the drift layer; a gate insulation film is disposed at a wall surface of the trench; and a gate electrode disposed on the gate insulation film. The emitter region is disposed on a surface layer portion of the base layer and is in contact with the trench.

Semiconductor device including trench gate structure with specific volume ratio of gate electrodes

A method for manufacturing a semiconductor device having a trench gate structure is provided. In the method, a first voltage-current characteristic indicating a relation between the main current and the gate voltage under a first temperature is measured to calculate a first threshold voltage. A second voltage-current characteristic indicating a relation between the main current and the gate voltage under a second temperature different from the first temperature is measured to calculate a second threshold voltage. It is determined whether the semiconductor device is a non-defective product or a defective product based on whether a difference between the second threshold voltage and the first threshold voltage is larger than a determination threshold value.

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Kariya, Japan

Masakazu Itoh