Hitachi-high-technologies Corporation

Hitachi High-tech Corporation

Masakazu Isozaki

Masahito Mori

Kenetsu Yokogawa

Takao Arase

Takahisa Hashimoto

Akitaka Makino

Taku Iwase

Tsunehiko Tsubone

Satoshi Yamamoto

Yoshifumi Ogawa

Hiroyuki Shichida

Masanori Kadotani

Nobuhide Nunomura

Chen Pin Hsu

Takeo Uchino

Shingo Kimura

Yousuke Sakai

Junichi Sayama

Masatsugu Fujita

Minoru Yatomi

A vacuum processing apparatus including a vacuum processing unit embracing a vacuum vessel into which a wafer to be processed is transferred and processed; a lock chamber into which the wafer is transferred; an atmospheric transfer unit embracing an atmospheric transfer chamber maintained at atmospheric pressure and inside which the wafer is transferred; and a wafer preserving container for stacking a processed wafer. The wafer preserving container is provided inside with an exhaust port which is placed behind the opening, in front of the stacking space, and in an upper and a lower edge regions relative to the stacking space and exhausts gas in the stacking space to outside and a manifold which is placed behind the stacking space, towards the opening between the upper edge region and the lower edge region, and has gas outlets to supply certain gas into the stacking space.

Vacuum processing apparatus

In order to be able to independently control a plasma density distribution both in a distribution with high center and a nodal distribution, and perform a plasma processing on a sample with higher accuracy for processing uniformity, a plasma processing apparatus includes: a vacuum vessel in which a plasma processing is performed on a sample; a radio frequency power source configured to supply radio frequency power for generating plasma; a sample stage on which the sample is placed; and a magnetic field forming unit configured to form a magnetic field inside the vacuum vessel and disposed outside the vacuum vessel, in which the magnetic field forming unit includes: a first coil; a second coil that is disposed closer to an inner side than the first coil and has a diameter smaller than a diameter of the first coil; a first yoke that covers the first coil, and an upper side and a side surface of the vacuum vessel, and in which the first coil is disposed; and a second yoke that covers the second coil along a peripheral direction of the second coil and has an opening below the second coil.

Plasma processing apparatus

A plasma processing apparatus with improved yield, adapted to include a vacuum container, a processing chamber disposed inside thereof, and in which a plasma is formed, a sample table disposed in the processing chamber and on which a sample is placed, two electrodes which have a film shape, disposed within the sample table, and to which power for attracting the sample is supplied so that different polarities are formed, a coiled portion in which two power supply lines are wound in parallel around the same axis, and a bypass line which connects the two power supply lines between the coiled portion and the two electrodes and has a capacitor.

Ring for a plasma processing apparatus

A plasma processing apparatus includes: a vacuum chamber in which plasma is formed; an inner chamber detachable from the vacuum chamber; a sample stage disposed in the inner chamber; a sample stage ring base disposed in the inner chamber; and a suspension beam coupled to the sample stage ring base in a space between the vacuum chamber and the inner chamber. With the inside of the vacuum chamber hermetically sealed, the inner chamber is placed on the sample stage ring base, and the inside is hermetically sealed. The upper part of the suspension beam is vertically movably held to a sample stage base plate configuring the upper part of the vacuum chamber to cover the inside. The plasma processing apparatus includes a conductive connector sandwiched between the suspension beam made of SUS and the upper part of the member and the sample stage base plate.

Electrode plate peripheral ring for a plasma processing apparatus

Electrode cover for a plasma processing apparatus

Electrode plate for a plasma processing apparatus

The present invention provides a vacuum processing apparatus that includes gas supply means having a hard interlock of a pair of gas valves. The present invention provides a vacuum processing apparatus including: a gas supply unit that supplies gas, for performing vacuum processing using normally closed type air-driven valves, to a processing chamber where the vacuum processing is performed, the gas supply unit having an interlock function in which, when a first valve of a pair of the air-driven valves is opened, a second valve of the pair is closed, the gas supply unit including an air circuit that controls air for driving the air-driven valves, the air circuit being configured using an electromagnetic valve having a solenoid coil corresponding to each of the pair of the air-driven valves.

A vacuum processing apparatus includes vacuum processing vessels each having a processing chamber with a pressure-reduced interior space, a vacuum transfer vessel which is coupled to the vacuum vessels disposed therearound and which has a low-pressure interior space in which a to-be-processed workpiece is conveyed, an atmospheric air transfer vessel which is coupled to the front side of the vacuum transfer vessel and which includes on its front face side cassette tables mounting thereon a cassette with the workpiece received therein for conveying the workpiece in an interior space under an atmospheric pressure, a position-aligning machine disposed within the atmospheric air transfer vessel at one of right and left ends for adjusting a position of the workpiece, and an adjuster disposed between lower part of this machine and a floor face for adjusting the supply of a fluid being fed to the vacuum processing vessels.

Growing community of inventors

Tokyo, Japan

Masakazu Isozaki