National Institute of Advanced Industrial Science and Technology

Masakazu Hioki

Hanpei Koike

Toshihiro Sekigawa

The multiplexer includes a plurality of transmission gates each formed by four-terminal double insulated gate N-type and P-type field effect transistors connected in parallel. One of gates of the N-type gate field effect transistor is connected to a first threshold voltage control node, and a first resistor is connected between the first threshold voltage control node and a first threshold voltage control voltage source. One of gates of the P-type gate field effect transistor is connected to a second threshold voltage control node, and a second resistor is connected between the second threshold voltage control node and a second threshold voltage control voltage source.

Multiplexer and integrated circuit using the same

A reconfigurable integrated circuit has non-volatile storage cells which form a plurality of programmable routing switches between basic tiles. The circuit includes a plurality of non-volatile storage cells providing a multiplexer-type programmable routing switch including a plurality of input terminals and an output terminal. The non-volatile storage cells are structured as a field effect transistor with a switch function and are placed in a propagation path of signal voltage from the input terminals to the output terminal, and the non-volatile storage cells configure the multiplexer-type programmable routing switch to selectively propagate the signal voltage from the input terminals, to provide a control circuit which directly writes conducted or non-conducted status for the non-volatile storage cells, erases the connection information, and reads to verify the conducted or non-conducted status of the non-volatile storage cells.

Growing community of inventors

Tsukuba, Japan

Masakazu Hioki