Mitsubishi Denki Kabushiki Kaisha

Other

Ryoden Semiconductor System Engineering Corporation

Masakazu Fukada

Dai Nakajima

Naoki Yoshimatsu

Takanobu Yoshida

Nobuyoshi Kimoto

Gourab Majumdar

Masuo Koga

Ken Takanashi

Hiroshi Yamamoto

Toru Kimura

Kenichi Koyama

Tatsuya Okuda

Hiroyuki Sasao

Yukimori Kishida

Takeshi Ohi

Toshinori Yamane

Yuuji Kuramoto

Toshimasa Maruyama

Haruo Takao

Majumdar Gourab

Eiji Suetsugu

Hiroshi Nishibori

In a power module (), a free-wheeling diode (A), an IGBT (B), and a capacitor () for smoothing direct current are disposed directly on a surface (BS) of a conductive heat sink (B) with through holes (BH). The rear electrodes of the free wheeling diode (A), the IGBT (B), and the capacitor () are bonded to the heat sink (B) for example with solder, whereby the diode (A), the IGBT (B), and the capacitor () are electrically connected with the heat sink (B). The front electrodes of the diode (A), the IGBT (B), and the capacitor () are connected with each other for example by wires (). In the heat sink (B), a cooling medium flows through the through holes (BH). Such a configuration allows miniaturization of the power module and improves the cooling performance and reliability of the power module.

Power module

A power module includes a first substrate with a power semiconductor device mounted thereon, a second substrate with a control circuit for controlling the power semiconductor device formed thereon, a smoothing capacitor electrically connected to the power semiconductor device for smoothing a voltage to be externally supplied to the power semiconductor device, and a case including a case frame and a case lid. The case has an interior in which the first substrate, the second substrate and the smoothing capacitor are disposed, and the smoothing capacitor is disposed in contact with a side surface of the case frame.

A power module includes a substrate with a power semiconductor device mounted thereon, a case having an interior in which the substrate is disposed, a cooling fin having a surface on which the substrate and the case are placed, and a smoothing capacitor disposed on an opposite surface of the cooling fin from the surface on which the substrate is placed, the smoothing capacitor being electrically connected to the power semiconductor device for smoothing a voltage to be externally supplied to the power semiconductor device.

P-electrode and N-electrode of a semiconductor device and capacitors in a plate-like shape or a block-like shape respectively connected to U-phase V-phase and W-phase having a switching element and a diode are built in a semiconductor device and a single or a plurality of capacitors are respectively connected to P-electrodes and N-electrodes in each of the phases, whereby the smoothing capacitors are built in the semiconductor device to reduce wiring inductances, the capacitors are miniaturized, and an entire electric power converting device, i.e. inverter, is miniaturized.

Semiconductor device having built-in capacitors

A semiconductor device for controlling electricity including a metal base plate and at least one insulating substrate. The insulating substrate includes an insulator plate, a back-side pattern on a back face of the insulator plate and bonded to the metal base plate, and two circuit patterns located on a front face of the insulator plate and above the back-side pattern. Each of the two circuit patterns has an &ldquo;L&rdquo; shape and extends along two sides of the insulator plate that are continued and perpendicular to each other. The two circuit patterns are also arranged at opposed corners of the insulator plate in a centrosymmetrical relation each other. Further, in each circuit pattern, a switching element is sandwiched between a free-wheel diode and an electrode area.

Semiconductor device for controlling electricity

Provided is a power module capable of driving an SR motor, giving a small size and high versatility and reducing a manufacturing cost. A switching element and a diode element which are to be connected to a P power wiring are provided to form a first line on the band-shaped P power wiring , a switching element and a diode element which are to be connected to an N power wiring are provided to form a second line aligned with the first line, and first band-shaped portions and of output terminals and and a band-shaped portion of the N power wiring are provided therebetween. The first band-shaped portions and and the band-shaped portion have a two-layer structure with an insulating layer interposed therebetween. The switching elements and and the diode elements and are arranged alternately.

A power module includes a box-shaped smoothing capacitor ( ) for smoothing a DC supply voltage to be externally applied to a power semiconductor device ( ). The smoothing capacitor ( ) is in contact with a side surface of a case frame ( ) including a side (along which an N-terminal ( N) and a P-terminal ( P) are arranged) of a top surface of the case frame ( ), and has a top surface level with the top surface of the case frame ( ). An N-electrode ( N) and a P-electrode ( P) of the smoothing capacitor ( ) are disposed on the top surface of the smoothing capacitor ( ) and in proximity to the N-terminal ( N) and the P-terminal ( P) of a power module body portion ( ), respectively. The power module can reduce a circuit inductance, is reduced in size and weight, and has good resistance to vibration.

In a powder module ( ), a free-wheeling diode ( A), an IGBH ( B), and a capacitor ( ) for smoothing direct current are disposed directly on a surface ( BS) of a conductive heat sink ( B) with through holes ( BH). The rear electrodes of the free-wheeling diode ( A), the IGBT ( B), and the capacitor ( ) are bonded to the heat sink ( B) for example with solder, whereby the diode ( A), the IGBT ( B), and the capacitor ( ) are electrically connected with the heat sink ( B). The front electrodes of the diodes ( A), the IGBT ( B), and the capacitor ( ) are connected with each other for example by wires ( ). In the heat sink ( B), a cooling medium flows through the through holes ( BH). Such a configuration allows miniaturization of the power module and improves the cooling performance and reliability of the power module.

Obtained is a power module which is excellent in electromagnetic shielding effects, is rarely influenced by external noises and acts as an external noise source with difficulty. An insulating substrate (,) is bonded through a solder (,) to a top surface of a heat sink (,) fixed to a support plate (,). A DC capacitor (,) is fixed to a bottom face of the heat sink (,) by adhesion. A control substrate (,) having a control IC (,) mounted thereon is fixed to the support plate (,). Moreover, a plurality of electrodes (,), a DC side electrode and refrigerant inlet-outlet (,) and a control connector (,) are provided on the support plate (,). A case (,) is fixed to a peripheral portion of the support plate (,), and surrounds the insulating substrate (,), the control substrate (,), the heat sink (,) and the DC capacitor,together with the support plate (,). Both the case (,) and the support plate (,) have conducting property.

A fast changeover from one power system to another in the event of an irregularity in the power source system substantially reduces operating costs by minimizing a power loss in switches during conduction, dispenses with a cooling device for cooling a thyristor switch, and implements the thyristor switch in a compact and low-cost design. The power supply system for a load includes one switching apparatus for connecting a load to one power source system, and another switching apparatus for connecting the load to another power source system. Each of the switching apparatus includes a pair of thyristors connected in anti-parallel and a mechanical switch connected in parallel with the thyristor pair. The thyristor pairs and the mechanical switches are controlled so that the mechanical switches conduct a load current when the load is supplied with power from the one power source system in a steady power supply state. The thyristor switches conduct the load current during a power source changeover time within which the load is disconnected from one power source system and connected to the other power source system, and do not conduct the load current during the steady power supply state.

Growing community of inventors

Tokyo, Japan

Masakazu Fukada