Fuji Electric Co., Ltd.

Masakazu Baba

Shinsuke Harada

A semiconductor device having a connecting region between an active region and an edge region. The semiconductor device including a semiconductor substrate, a first semiconductor layer provided on the semiconductor substrate, a second semiconductor layer provided on the first semiconductor layer, a plurality of first semiconductor regions selectively provided in the second semiconductor layer, a plurality of first and second trenches penetrating through the first semiconductor regions and the second semiconductor layer, a plurality of gate electrodes provided in the first trenches, via a plurality of gate insulating films, respectively, and a plurality of Schottky electrodes respectively provided in the second trenches. The semiconductor substrate, the first and second semiconductor layers, the first semiconductor regions, the first trenches, the gate electrodes and the gate insulating films are provided in the active region. The second trenches and the Schottky electrodes are provided in both the active region and the connecting region.

Semiconductor device

A semiconductor device, including: a drift layer of a first conductivity type provided in a semiconductor base; a base layer of a second conductivity type provided in the semiconductor base at a front surface side thereof; a plurality of first trenches provided in the semiconductor base at a front surface side thereof, and having a plurality of first portions extending in a first direction to form a striped pattern; a second trench provided in the semiconductor base at a front surface side thereof, and having a plurality of second portions extending parallel to the first portions; a plurality of gate electrodes respectively provided in the first trenches; and a diode electrode provided in the second trench. The diode electrode includes: a plurality of inner electrodes provided in the second portions, and an outer electrode connecting the inner electrodes and surrounding ends of the first portions in a plan view.

A semiconductor device capable of suppressing forward voltage degradation and loss during turn-on. A vertical MOSFET includes a semiconductor substrate of a first conductivity type, a first semiconductor layer of the first conductivity type, a second semiconductor layer of a second conductivity type, first semiconductor regions of the first conductivity type, second semiconductor regions of the second conductivity type, third semiconductor regions of the second conductivity type, first trenches and second trenches, gate electrodes provided in the first trenches via a gate insulating film, and Schottky metal provided in the second trenches. In a region between an active region through which current flows during an on-state and an edge region that surrounds a periphery of the active region and sustains a breakdown voltage, sidewalls of the second trenches are apart from the second semiconductor regions and the third semiconductor regions.

Semiconductor device including vertical MOSFET and Schottky barrier diode

One object is to provide a semiconductor device capable of reducing loss during turn-on and degradation of forward voltage. A vertical MOSFET includes a semiconductor substrateof a first conductivity type, a first semiconductor layerof the first conductivity type, a second semiconductor layerof a second conductivity type, first semiconductor regionsof the first conductivity type, first trenchesand a second trench, gate electrodesprovided in the first trenchesvia a gate insulating film, and a Schottky electrodeprovided in the second trench. The first trenchesare provided in a striped pattern, in a plan view and the second trenchsurrounds the first trenches

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Matsumoto, Japan

Masakazu Baba