Nissin Ion Equipment Co., Ltd.

Masakazu Adachi

Yuya Hirai

Tomoya Taniguchi

Shigeki Sakai

Weijiang Zhao

Takayuki Murayama

Shinsuke Inoue

A heating device is provided. The heating device includes a conveyance member, first and second support members, and a heat reflecting plate. The first support member is provided on the conveyance member and supports a substrate during movement of the conveyance member. The second support member includes a heater and supports the substrate during processing of the substrate. The heat reflecting plate travels with the conveyance member and reflects heat from the heater toward the substrate.

Heating device

A wafer separating apparatus and method are provided. The apparatus includes an electrostatic chuck, a separation structure and a control device. The electrostatic chuck electrostatically supports a wafer during wafer processing using a voltage having a polarity. The separation structure mechanically separate the wafer from the electrostatic chuck. The control device controls the electrostatic chuck to, after the wafer processing is completed, reduce a magnitude of the voltage with the polarity while the separation structure applies a force to the wafer to separate the wafer from the electrostatic chuck.

Wafer separating apparatus, and wafer separating method

An ion source includes a plasma chamber, and a suppression electrode disposed downstream of the plasma chamber, and is operable to irradiate the suppression electrode with an ion beam produced from a cleaning gas to clean the suppression electrode. Prior to cleaning, the ion source moves the suppression electrode or the plasma chamber in a first direction to increase a distance between the plasma chamber and the suppression electrode.

Ion source and cleaning method thereof

A heating device is provided. The heating device includes a conveyance member that conveys a substrate between a heating position and a non-heating position, a support member that is provided on the conveyance member and that supports the substrate, a heater provided at the heating position and operable to heat a first surface of the substrate, and a heat reflecting plate attached to the conveyance member in facing relation to a second surface of the substrate opposite to the first surface.

Heating device and semiconductor manufacturing apparatus

An ion source is provided. The ion source includes a plasma generation chamber, a plate member, and an extraction electrode. The plasma generation chamber is supplied with a halogen-containing material. The plate member is provided on an end of the plasma generation chamber located on a side toward which an ion beam is extracted. The extraction electrode is disposed downstream of the plate member. The plate member is formed with a gas supply passage via which hydrogen gas is supplied to the extraction electrode.

Ion source

An electrostatic chuck system comprising a chuck bodyhaving a clamping facefor electrostatically clamping a substrate, an electrode portiongenerating a clamping force on the clamping face, a temperature-regulating portionregulating the temperature of the substrateto maintain it at a predetermined level, and a controllercontrolling the voltage applied to the electrode portion, wherein, prior to completion of the electrostatic clamping of the substrateto the chuck body, a voltage waveform obtained by superimposing a first waveform, which changes in a stepwise, rectilinear, or quadratic manner between a first level and a second level having a larger absolute value than the first level, and a periodic second waveform, which may be any of a rectangular wave, a triangular wave, a saw-tooth wave, or a sine wave, is applied by the controllerto the electrode portion

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Koka, Japan

Masakazu Adachi