Matsushita Electric Industrial Co., Ltd.

Panasonic Corporation

Masakatsu Suzuki

Isao Kidoguchi

Akihiko Ishibashi

Ryoko Miyanaga

Yuzaburo Ban

Masahiro Kume

Takeshi Uenoyama

Yasuhito Kumabuchi

Yoshiaki Hasegawa

Kiyoshi Ohnaka

Hideto Adachi

Gaku Sugahara

Satoshi Kamiyama

Ayumu Tsujimura

Toshiya Fukuhisa

Masaya Mannoh

Akira Takamori

Katsuya Nozawa

Minoru Kubo

Kiyoyuki Morita

Yusaburo Ban

Fukukazu Hirayama

A solid-state imaging device includes a semiconductor substrate () with a photodetector portion (). The photodetector portion () includes a p-type first impurity region (surface inversion layer) () formed in the semiconductor substrate () and an n-type second impurity region (photoelectric conversion region) () formed below the surface inversion layer (). The photoelectric conversion region () is formed by introducing an n-type impurity into the semiconductor substrate (). The surface inversion layer () is formed by introducing indium into a region of the semiconductor substrate () where the photoelectric conversion region () is formed.

Solid-state imaging device and method for manufacturing the same

A semiconductor laser device includes: a first cladding layer, which is made of a nitride semiconductor of a first conductivity type and is formed over a substrate; an active layer, which is made of another nitride semiconductor and is formed over the first cladding layer; and a second cladding layer, which is made of still another nitride semiconductor of a second conductivity type and is formed over the active layer. A spontaneous-emission-absorbing layer, which is made of yet another nitride semiconductor of the first conductivity type and has such an energy gap as absorbing spontaneous emission that has been radiated from the active layer, is formed between the substrate and the first cladding layer.

Semiconductor laser device, optical disk apparatus and optical integrated unit

The semiconductor laser of this invention includes an active layer formed in a c-axis direction, wherein the active layer is made of a hexagonal-system compound semiconductor, and anisotropic strain is generated in a c plane of the active layer.

Semiconductor light emitting element and method for fabricating the same

A semiconductor laser device () includes a resonant cavity () in which a quantum well active layer () made up of barrier layers of gallium nitride and well layers of indium gallium nitride is vertically sandwiched between at least light guide layers of n- and p-type aluminum gallium nitride. An end facet reflective film () is formed on a reflective end facet () opposite to a light-emitting end facet () in the resonant cavity (). The end facet reflective film () has a structure including a plurality of unit reflective films (), each of which is made up of a low-refractive-index film () of silicon dioxide and a high-refractive-index film () of niobium oxide. The low-and high-refractive-index films are deposited in this order on the end facet of the resonant cavity ().

Semiconductor laser device, method for fabricating the same, and optical disk apparatus

Semiconductor laser device optical disk apparatus and optical integrated unit

A semiconductor light-emitting device of Group III-V compound semiconductors includes a quantum well layer, which is formed over a substrate and includes a barrier layer and a well layer that are alternately stacked one upon the other. The band gap of the well layer is narrower than that of the barrier layer. The well layer contains indium and nitrogen, while the barrier layer contains aluminum and nitrogen. In this structure, a tensile strain is induced in the barrier layer, and therefore, a compressive strain induced in the quantum well layer can be reduced. As a result, a critical thickness, at which pits are created, can be increased.

Group III-V nitride semiconductor light-emitting device which allows for efficient injection of electrons into an active layer

The method of fabricating a nitride semiconductor of this invention includes the steps of forming, on a substrate, a first nitride semiconductor layer of AlGaInN, wherein 0&#x2266;u, v, w&#x2266;1 and u+v+w=1; forming, in an upper portion of the first nitride semiconductor layer, plural convexes extending at intervals along a substrate surface direction; forming a mask film for covering bottoms of recesses formed between the convexes adjacent to each other; and growing, on the first nitride semiconductor layer, a second nitride semiconductor layer of AlGaInN, wherein 0&#x2266;x, y, z&#x2266;1 and x+y+z=1, by using, as a seed crystal, C planes corresponding to top faces of the convexes exposed from the mask film.

Method of fabricating nitride semiconductor, method of fabricating nitride semiconductor device, nitride semiconductor device, semiconductor light emitting device and method of fabricating the same

A semiconductor laser device ( ) includes a resonant cavity ( ) in which a quantum well active layer ( ) made up of barrier layers of gallium nitride and well layers of indium gallium nitride is vertically sandwiched between at least light guide layers of n- and p-type aluminum gallium nitride. An end facet reflective film ( ) is formed on a reflective end facet ( ) opposite to a light-emitting end facet ( ) in the resonant cavity ( ). The end facet reflective film ( ) has a structure including a plurality of unit reflective films ( ), each of which is made up of a low-refractive-index film ( ) of silicon dioxide and a high-refractive-index film ( ) of niobium oxide. The low-and high-refractive-index films are deposited in this order on the end facet of the resonant cavity ( ).

The method of fabricating a nitride semiconductor of this invention includes the steps of forming, on a substrate, a first nitride semiconductor layer of Al Ga In N, wherein 0&lE;u, v, w &lE;1 and u&plus;v&plus;w&equals;1; forming, in an upper portion of the first nitride semiconductor layer, plural convexes extending at intervals along a substrate surface direction; forming a mask film for covering bottoms of recesses formed between the convexes adjacent to each other; and growing, on the first nitride semiconductor layer, a second nitride semiconductor layer of Al Ga In N, wherein 0&lE;x, y, z&lE;1 and x&plus;y&plus;z&equals;1, by using, as a seed crystal, Cplanes corresponding to top faces of the convexes exposed from the mask film.

Si and SiGeC layers are formed in an NMOS transistor on a Si substrate. A carrier accumulation layer is formed with the use of a discontinuous portion of a conduction band present at the heterointerface between the SiGeC and Si layers. Electrons travel in this carrier accumulation layer serving as a channel. In the SiGeC layer, the electron mobility is greater than in silicon, thus increasing the NMOS transistor in operational speed. In a PMOS transistor, a channel in which positive holes travel, is formed with the use of a discontinuous portion of a valence band at the interface between the SiGe and Si layers. In the SiGe layer, too, the positive hole mobility is greater than in the Si layer, thus increasing the PMOS transistor in operational speed. There can be provided a semiconductor device having field-effect transistors having channels lessened in crystal defect.

Growing community of inventors

Osaka, Japan

Masakatsu Suzuki