Toyota Jidosha Kabushiki Kaisha

Osaka University

Masakatsu Maeda

Yasuo Takahashi

Masahiro Sugimoto

Akinori Seki

Akira Kawahashi

An ohmic electrode for a p-type SiC semiconductor, and a method of forming the ohmic electrode. The ohmic electrode has an ohmic electrode layer, which has an amorphous structure and which is made of a TiSiCternary film of which a composition ratio is within a composition range that is surrounded by two lines and two curves expressed by an expression x=0 (0.35&#x2266;y&#x2266;0.5), an expression y=&#x2212;1.120x+0.5200 (0.1667&#x2266;x&#x2266;0.375), an expression y=1.778(x&#x2212;0.375)+0.1 (0&#x2266;x&#x2266;0.375) and an expression y=&#x2212;2.504x&#x2212;0.5828x+0.5 (0&#x2266;x&#x2266;0.1667) and that excludes the line expressed by the expression x=0. The ohmic layer is directly laminated on a surface of a p-type SiC semiconductor.

Ohmic electrode and method of forming the same

A manufacturing method of a semiconductor device including an electrode having low contact resistivity to a nitride semiconductor is provided. The manufacturing method includes a carbon containing layer forming step of forming a carbon containing layer containing carbon on a nitride semiconductor layer, and a titanium containing layer forming step of forming a titanium containing layer containing titanium on the carbon containing layer. A complete solid solution Ti (C, N) layer of TiN and TiC is formed between the titanium containing layer and the nitride semiconductor layer. As a result, the titanium containing layer comes to be in ohmic contact with the nitride semiconductor layer throughout the border therebetween.

Semiconductor device and manufacturing method of semiconductor device

A method of forming an Ohmic contact on a P-type 4H&#x2014;SiC and an Ohmic contact formed by the same are provided. A method of forming an Ohmic contact on a P-type 4H&#x2014;SiC substrate including a deposition step of successively depositing a 1 to 60 nm thick first Al layer, Ti layer, and second Al layer on a P-type 4H&#x2014;SiC substrate and an alloying step of forming an alloy layer between the SiC substrate and the Ti layer through the first Al layer by heat treatment in a nonoxidizing atmosphere. An Ohmic contact on a P-type 4H&#x2014;SiC substrate formed by this method is also provided.

Method of forming an OHMIC contact on a P-type 4H-SIC substrate

A method is set forth of forming an ohmic electrode having good characteristics on a SiC semiconductor layer. In the method, a Ti-layer and an Al-layer are formed on a surface of the SiC substrate. The SiC substrate having the Ti-layer and the Al-layer is maintained at a temperature that is higher than or equal to a first temperature and lower than a second temperature until all Ti in the Ti-layer has reacted with Al. The first temperature is the minimum temperature of a temperature zone at which the Ti reacts with the Al to form AlTi, and the second temperature is the minimum temperature of a temperature zone at which the AlTi reacts with SiC to form TiSiC. As a result of this maintaining of temperature step, an AlTi-layer is formed on the surface of the SiC substrate. The method also comprises further heating the SiC substrate having the AlTi-layer to a temperature that is higher than the second temperature. As a result of this step of further heating the SiC substrate reacts with AlTi of the AlTi-layer to form a TiSiC-layer on the surface of the SiC substrate.

Growing community of inventors

Suita, Japan

Masakatsu Maeda