Sii Nanotechnology Inc.

Masakatsu Hasuda

Yasuhiko Sugiyama

Toshiaki Fujii

Kouji Iwasaki

Toshio Kodama

Yasuyuki Takagi

Atsushi Uemoto

Junichi Tashiro

Haruo Takahashi

Toshitada Takeuchi

Toshiaki Fuji

Mamoru Okabe

An electron microscope has a focused ion beam column positioned relative to an electron beam column so that the focused ion beam substantially perpendicularly intersects the electron beam. A backscattered electron detector is positioned relative to the focused ion beam column so that the direction normal to a detection plane of the backscattered electron detector is substantially perpendicular to the direction of the focused ion beam. The backscattered electron detector is configured and positioned to detect backscattered electrons released in a spread of at least about 70 degrees in width from the surface of the section by irradiation of the section with the electron beam

Electron microscope and specimen analyzing method

There is provided a composite charged particle beam apparatus, in which a first rotation axis of a rotatable stage intersects a beam irradiation axis of a FIB column and a beam irradiation axis of an SEM so as to be substantially perpendicular thereto, respectively, at a sample observing position, the rotatable stage is provided with a supporting member which can be rotated with respect to the first rotation axis, and the supporting member is connected to a movement mechanism which can dispose the sample at the sample observing position.

Composite charged particle beam apparatus and sample processing and observing method

A sample working/observing apparatus possesses a sample holding mechanism. The sample holding mechanism possesses a sample holder holding a sample, and a base detachably supporting the sample holder. Between these, there are detachably provided a rotation support part supporting so as to be rotatable, a slide support part supporting so as to be slidable from a rotation center toward an X-direction, and a butting support part supporting so as to be slidable in the X-direction and a Y-direction. In an upper face, there are provided an X-direction positioning pin and a Y-direction positioning pin, which are disposed along the Y-direction and the X-direction from the rotation center, and butt against one side and the other side of the sample.

Sample holding mechanism and sample working/observing apparatus

A thermal analysis apparatus possesses has a cylindrical furnace tube axially inserted in a cylindrical heating furnace, and a pair of sample holders extending axially inside the furnace tube. The furnace tube is supported by two axially spaced groups of butting members, each group having three or more butting members that are disposed in circumferentially spaced-apart relationship on the outside of the furnace tube and that butt against the furnace tube to restrain positional deviation thereof in a radial direction while permitting expansion and contraction thereof in the axial direction during heating of the furnace tube by the heating furnace.

Thermal analysis apparatus

An apparatus has a holder member () which holds a sample (), and a removing beam source () which irradiates an inert ion beam onto a cross section () of the sample () held by a holder member () and removes a fracture layer on the cross section (). Then, the removing beam source () is disposed on the holding end side of the sample () with respect to the normal L of the cross section () so that the irradiating direction of the inert ion beam is tilted at the tilt angle &#x3b8; to the normal L with respect to the cross section ().

Ion beam device and ion beam processing method, and holder member

There is provided a liquid metal ion beam irradiation device for irradiating a specific portion of a samplewith a prescribed liquid metal ion beam so as to form a cross section, and a gaseous ion beam irradiation devicefor scanning a prescribed region (observation region) of the cross section using a gaseous ion beam focused to a prescribed diameter and removing a damaged layer on the prescribed region.

Ion beam device and ion beam processing method

An ion beam processing device has a sample holder for fixing a sample on which a section has been formed by irradiation of a specified focused ion beam from a surface side, and gas ion beam irradiation device for irradiating a gas ion beam to a region of the sample fixing using the holder member that contains the section to remove a damage layer on the section. The gas ion beam from the gas ion beam irradiation device irradiates the section from a rear surface side of the sample at a specified incident angle.

Growing community of inventors

Chiba, Japan

Masakatsu Hasuda