Other

Hitachi, Ltd.

Renesas Technology Corp.

Hitachi Hokkai Semiconductor Ltd.

Hitachi Hokkai

Masakatsu Gotou

Hiroshi Kikuchi

Tetsuya Hayashida

Shigeru Nakamura

Norihiko Kasai

A semiconductor device having a stack structure comprises: a single-piece substrate having a chip support surface serving as a main surface, a back surface, a plurality of connection terminals provided on the chip support surface and a plurality of solder balls provided on the back surface; a first semiconductor chip having a main surface, aback surface, a plurality of semiconductor devices on the main surface of the first semiconductor chip and a plurality of pads provided on the main surface of the first semiconductor chip; a second semiconductor chip having a main surface, a back surface, a plurality of semiconductor devices provided on the main surface of the second semiconductor chip and a plurality of pads provided on the main surface of the second semiconductor chip; and a resin sealing body formed on the chip support surface of the single-piece substrate and used for sealing the first semiconductor chip and the second semiconductor chip; and a plurality of wires for connecting the pads of the second semiconductor chip to the respective connection terminals provided on the single-piece substrate. In the stack structure, the second semiconductor chip is made thinner than the first semiconductor chip. As a result, the structure package of the semiconductor device can be made thin.

Semiconductor device and method of manufacturing the same

An improvement of the yield of semiconductor devices is achieved in the manufacture of a semiconductor device. The method includes forming a resin enclosure for block-molding a plurality of a semiconductor chips by placing a plurality of semiconductor chips inside a cavity of a molding die along with a substrate, and then injecting a resin from a first side to a second side of a main surface of the substrate. The plurality of semiconductor chips are mounted on the main surface of the substrate from the first side to the second side of the main surface with a predetermined spacing, the second side facing the first side. The method is characterized by the application of cleaning treatment to the main surface of the substrate before forming the resin enclosure.

Method of manufacturing a semiconductor device

A semiconductor device has a pellet at the upper surface of a substrate and connects the pellet with a plurality of connecting terminals formed of solder bumps. The connecting terminal group is arranged in the form of a plurality of annular lines in the periphery of the pellet, and a reinforcing resin layer is formed, in the connecting terminal group, of a resin filling a thinner space formed between the pellet and the substrate. At the time of forming the solder bumps, a cutout portion (a vacant area where no bumps are arranged) is formed in the connecting terminal annular line group by means of a cutout part opened at one side of the annular line group, and the reinforcing resin layer is also formed in the cutout portion. Since the air in the thinner space is perfectly exhausted by the effect of the connecting terminal annular line group cutout portion when the vacant area is filled with the reinforcing resin, the generation of an unfilled area in the reinforcing resin layer can be prevented.

Semiconductor device and manufacturing of the same

Growing community of inventors

Atsugi, Japan

Masakatsu Gotou