Kabushiki Kaisha Toshiba

Masaji Iwamoto

Jun Tanaka

Takashi Imoto

Akira Tanimoto

Yoriyasu Ando

Naoki Iwamasa

Masatoshi Kawato

Yusuke Dohmae

Koichi Miyashita

Masashi Noda

A semiconductor device includes a substrate, a controller chip, and memory chips. Wiring is formed on the substrate. The controller chip has a rectangular surface area, and is mounted on the substrate. The memory chips have quadrangular surface areas, and are superposed on the substrate on a first major side of the controller chip. The first major side defines a first direction and a first controller terminal block is formed along a first minor side thereof orthogonal to the first direction, and a second controller terminal block is formed along a second major side opposite to the first major side.

Semiconductor device and memory device

In one embodiment, a semiconductor device includes a first semiconductor chip disposed on a circuit board, an adhesive layer fixing the first semiconductor chip to the circuit board, and a second semiconductor chip having an outer shape smaller than that of the first semiconductor chip. At least a part of the second semiconductor chip is embedded in the adhesive layer. The adhesive layer has a thickness in a range of 95 to 150 &#x3bc;m. The adhesive layer includes a cured product of a thermosetting resin whose thermal time viscosity at a time that the second semiconductor chip is embedded is in a range of 500 to 5000 Pa&#xb7;s.

Semiconductor device and method for manufacturing the same

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Kanagawa-ken, Japan

Masaji Iwamoto