Fujitsu Corporation

Masaji Dohi

Hiroshi Daiku

Yoichiro Sakachi

Satoshi Kawata

Kenji Awamoto

Yoshihiro Miyamoto

Yuichiro Ito

Hiroyuki Ishizaki

Kazuya Kubo

Yoshiki Tsujino

A solution of precursor of a pyroelectric material, e.g. BaSrTiO.sub.3, is coated on a surface of a silicon wafer having an array of mesas corresponding to infrared sensor elements to be formed thereon, and the pyroelectric material precursor coating is dried and then is subjected to a heat treatment for converting thereof into a pyroelectric thin film (sol-gel process). The internal stress in the pyroelectric thin film formed as thick as 1 .mu.m by repeating the process concentrates in the region (groove) between the mesas, hence cracks occurring in the film in connection with the stress are limited within the region and the portions of the film on the mesas can be free from the cracks. The pyroelectric thin film in the groove is selectively removed. An infrared image sensing device comprising sensor elements of uniform characteristics and high reliability is provided.

Infrared detection device comprising a pyroelctric thin film and method

A display signal of high contrast is generated by processing an image signal that is acquired from a camera such as an infra-red or X-ray camera. The method involves: dividing a screen into polygons, finding signal intensities of pixels in these polygons by interpolation from the original image signal intensities of pixels corresponding to the vertices of these polygons as a signal intensity LF of a low frequency component; finding the signal intensities HF of high frequency components of these pixels by performing calculation to subtract the signal LF of this low frequency component from the original image signal S at each pixel; finding, for the signal intensities HF of these high frequency components, from a histogram showing the rate of occurrence numbers of the respective signal intensities, a transformation function IHS including the integrated values of these rate of occurrence numbers up to respective signal intensities; transforming the signal intensities of the high frequency components HF into display signal intensities DHF in accordance with this transformation function IHS; and finding the display signal DP of these pixels by adding to the display signals DHF of these high frequency components obtained by this transformation a signal obtained by multiplying the signal of the low frequency component LF by a weighting coefficient .beta. of less than 1.

Image signal processing method and image signal processing device

An infrared detection device has a substrate with a plurality of hollow mesas and a pyroelectric thin film formed on the surface having the mesas.

Infrared detection device comprising a pyroelectric thin film and method

An image sensing device uses photodiodes arranged in a matrix. Each photodiode is connected to one of p serially-coupled input gate and transfer gate combinations, were p is an integer greater than or equal to 2. Channel terminals of the p transfer gates are commonly-coupled to a serially-coupled storage gate and output switch combination. The serially-coupled storage gate and output switch combination and its associated p input gate and transfer gate combinations can be repeatedly provided in rows and columns, and addressed so that pixels determined by the photodiodes can be serially output from the image sensing device. Among other advantages, by using serially-coupled input gate and transfer gate combinations, the area provided for a storage gate can be increased so that the sensitivity, dynamic range and/or signal-to-noise ratio is increased relative to conventional devices.

Two-dimensional image sensing device for having a storage gate for

A charge injection device sensing an optical radiation pattern is driven at an operation sequence where the charge holding mode is inserted between the charge storing/readout mode and the charge injection mode. The charge holding period is effective for picture elements influenced by charges injected into the substrate after the readout operation placed spacially far and timed. The problem of cross-talk at high speed operation is resolved.

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Kawasaki, Japan

Masaji Dohi