Mitsubishi Materials Corporation

Masahito Komasaki

Koya Arai

Yoshiyuki Nagatomo

Yoshirou Kuromitsu

Yoshinobu Nakada

Toshiyuki Nagase

Sotaro Oi

Kanji Hosoki

Jiro Sano

Hiroshi Shibaya

Jiro Kajiwara

Kazuo Iizuka

Shuji Nishimoto

Wataru Iwazaki

Hiroyuki Kobayashi

Yoshie Kaido

Syuuji Nishimoto

A magnesium-based thermoelectric conversion material includes a first layer formed of MgSi and a second layer formed of MgSiSn(here, x is equal to or greater than 0 and less than 1), in which the first layer and the second layer are directly joined to each other, and within a junction surface with the first layer and in the vicinity of the junction surface, the second layer has a tin concentration transition region in which a tin concentration increases as a distance from the junction surface increases. The junction layer is regarded as a site in which a tin concentration is found to be equal to or lower than a detection limit by the measurement performed using EDX.

Magnesium-based thermoelectric conversion material, magnesium-based thermoelectric conversion element, thermoelectric conversion device, and method for manufacturing magnesium-based thermoelectric conversion material

An insulated heat transfer substrate includes a heat transfer layer formed of aluminum or an aluminum alloy, a conductive layer provided on one surface side of the heat transfer layer, and a glass layer formed between the conductive layer and the heat transfer layer, in which the conductive layer is formed of a sintered body of silver, and a thickness of the glass layer is in a range of 5 &#x3bc;m or larger and 50 &#x3bc;m or smaller.

Insulated heat transfer substrate, thermoelectric conversion module, and method for manufacturing insulated heat transfer substrate

A thermoelectric conversion module is a thermoelectric conversion module in which a plurality of thermoelectric conversion elements are electrically connected to each other via a first electrode portion disposed on first end side of the thermoelectric conversion elements and a second electrode portion disposed on the second end side of the thermoelectric conversion elements; a first insulating circuit board provided with a first insulating layer of which at least one surface is made of alumina and the first electrode portion formed of a sintered body of Ag formed on the one surface of the first insulating layer is disposed on the first end side of the thermoelectric conversion elements; and a glass component is present at an interface between the first electrode portion and the first insulating layer.

Thermoelectric conversion module and method for producing thermoelectric conversion module

Provided is a method for manufacturing a metal-layer-joined ceramic base material board, in which at least one scribe line is formed, on each of the front and back surfaces of a ceramic base material board, along dividing lines for dividing the ceramic base material board into a plurality of ceramic boards, a metal board covering at least a portion of the dividing lines is joined to each of the front and back surface of the ceramic base material board, the metal boards are etched along the dividing lines to form a plurality of metal layers, and the plurality of metal layers are joined to each of the front and back surfaces of the ceramic base material board.

Method for manufacturing ceramic-metal layer assembly, method for manufacturing ceramic circuit board, and metal-board-joined ceramic base material board

A thermoelectric conversion module in which a plurality of P-type thermoelectric conversion elements and N-type thermoelectric conversion elements, which are combined in pairs, are connected in series between a pair of opposing wiring substrates via the wiring substrates: electrode parts to which the thermoelectric conversion elements are connected, are formed on surfaces of ceramic substrates of the wiring substrates: among the thermoelectric conversion elements, the thermoelectric conversion element having a larger thermal expansion coefficient has the length, in a direction in which the wiring substrates face each other, that is smaller than the length, in a direction in which the wiring substrates face each other, of the thermoelectric conversion element having a smaller thermal expansion coefficient: an electrically conductive spacer is interposed between at least one of the two ends of the thermoelectric conversion element having a larger thermal expansion coefficient and the ceramic substrate of the wiring substrate.

Thermoelectric conversion module and thermoelectric conversion device

A thermoelectric conversion cell is provided with: an insulating member having a through hole, a female threaded portions (insulation-side threaded portion) at both end parts, respectively, of the through hole in the through-direction; a thermoelectric conversion member which has a thermoelectric conversion element (P-type thermoelectric conversion element), and is accommodated within the through hole; and electrode members coupled at the end parts, respectively, of the insulating member, and which have male threaded portions (electrode-side threaded portion) corresponding to the female threaded portions, and electrode parts electrically connected to the end part of the thermoelectric conversion member inside the through hole.

Thermoelectric conversion cell and thermoelectric conversion module

In an aluminum material that constitutes a bonding surface of a metal layer, and an aluminum material that constitutes a bonding surface of a heat sink, any one aluminum material is set to a high-purity aluminum material with high aluminum purity, and the other aluminum material is set to a low-purity aluminum material with low aluminum purity. The difference in a concentration of a contained element other than Al between the high-purity aluminum material and the low-purity aluminum material is set to 1 at % or greater, and the metal layer and the heat sink are subjected to solid-phase diffusion bonding.

Method for manufacturing substrate for power module with heat sink

The resistor includes a chip resistive element which includes a resistive element and metal electrodes and which is formed on first surface of a ceramic substrate, metal terminals electrically joined to the metal electrodes, and an Al member formed on the second surface side of the ceramic substrate, wherein the ceramic substrate and the Al member are joined using an Al&#x2014;Si-based brazing filler metal, the metal electrodes and the metal terminals are joined to each other using a solder, and a degree of bending of an opposite surface of the Al member opposite to a surface on the ceramic substrate side is in a range of &#x2212;30 &#x3bc;m/50 mm to 700 &#x3bc;m/50 mm.

Resistor and method for manufacturing resistor

A wafer loading/unloading device and a method for producing wafers in which positioning and mounting can be effected in a stable manner when attaching the wafer to the polishing head and which make it possible to receive or transfer the polished wafer in a stable manner. The wafer loading/unloading device includes a main body portion for supporting a wafer W, a swinging shaft supporting a swinging arm connected to the main body portion, and an arm ascending/descending mechanism supporting the swinging arm such that it can ascend and descend. The main body portion is equipped with a wafer support portion and an action force absorbing mechanism for absorbing vertical force acting on the wafer support portion, so that the impact when attaching or detaching the wafer to or from the polishing head is mitigated. Thus, damage to the wafer and the polishing head is prevented and the wafer is transferred in a stable manner.

Wafer loading/unloading device and method for producing wafers

An apparatus for dressing a wafer polishing pad, including a disk-shaped dresser, an arm, and a control unit. The disk-shaped dresser is configured to be pressed against the polishing pad which rotates in a circumferential direction. The dresser is configured to rotate in a same direction as the polishing pad rotates due to frictional force generated between the dresser and the polishing pad. The arm is configured to support the dresser rotatably and to press the dresser against the polishing pad. The control unit is configured to control the arm to position the dresser such that a peripheral edge portion of the dresser is positioned outside a peripheral edge portion of the polishing pad by a predetermined distance.

Apparatus and method for dressing a wafer polishing pad

The invention provides a wafer polishing apparatus and a wafer manufacturing method which can improve uniformity in polishing wafer surfaces. A wafer holding head comprises a head body; a diaphragm stretched inside the head body; a carrier fixed to the diaphragm to be displaceable in the direction of a head axis while holding the wafer; a retainer ring disposed around the carrier in concentric relation and fixed to the diaphragm to be displaceable in the direction of the head axis; and a thin plate disposed so as to project from the head body along a surface of the diaphragm. With the provision of the thin plate, an excessive pressing force acting upon the retainer ring from the diaphragm is suppressed, and the wafer surface can be prevented from being excessively polished at an outer peripheral edge.

Growing community of inventors

Saitama, Japan

Masahito Komasaki