Kokusai Electric Corporation

Hitachi-kokusai Electric Inc.

Renesas Electronics Corporation

Masahito Kitamura

Kazuhiro Harada

Hiroshi Ashihara

Motomu Degai

Hiroaki Hiramatsu

Tetsuya Takahashi

Atsushi Sano

Arito Ogawa

Kimihiko Nakatani

Masanori Nakayama

Sadayoshi Horii

Yoshitake Kato

Takahiro Morikawa

There is provided a technique which includes (a) forming a seed layer on a substrate by supplying a first process gas to the substrate at a first temperature, (b) forming a film on the seed layer by supplying a second process gas to the substrate at a second temperature, and (c) annealing the seed layer and the film at a third temperature, wherein at least one selected from the group of a crystal grain size and a surface roughness of the film after performing the annealing in (c) is adjusted by controlling a thickness of the seed layer formed in (a).

Method of manufacturing semiconductor device, substrate processing apparatus, and recording medium

There is provided a technique that includes providing a substrate; and forming a film on the substrate by performing: supplying a first inert gas from a first supplier to the substrate; supplying a second inert gas from a second supplier to the substrate; and supplying a first processing gas from a third supplier, which is installed on an opposite side of the first supplier across a straight line passing through the second supplier and a center of the substrate, to the substrate, wherein in the act of forming the film, a substrate in-plane film thickness distribution of the film formed on the substrate is adjusted by controlling a balance between a flow rate of the first inert gas supplied from the first supplier and a flow rate of the second inert gas supplied from the second supplier.

Described is a technique for uniformly doping a silicon substrate having a Fin structure with a dopant. A method of manufacturing a semiconductor device may includes: (a) forming a dopant-containing film containing a dopant on a silicon film by performing a cycle a predetermined number of times, the cycle including: (a-1) forming a first dopant-containing film by supplying a first dopant-containing gas containing the dopant and a first ligand to a substrate having thereon the silicon film and one of a silicon oxide film and a silicon nitride film; and (a-2) forming a second dopant-containing film by supplying a second dopant-containing gas containing the dopant and a second ligand different from and reactive with the first ligand to the substrate; and (b) forming a doped silicon film by annealing the substrate having the dopant-containing film thereon to diffuse the dopant into the silicon film.

Method of manufacturing semiconductor device

The present invention provides a technology capable of removing impurities remaining in a thin film when the film is formed and modifying a characteristic of the thin film according to a change in impurity concentration. There is provided a method of manufacturing a semiconductor device including: (a) repetitively supplying a plurality of gases including elements constituting a film in temporally separated pulses (in non-simultaneous manner) to form the film on the substrate; and (b) exciting a modifying gas including a reducing gas and at least one of a nitriding gas and an oxidizing gas by plasma and supplying the modifying gas excited by plasma to modify the film.

A method of manufacturing a semiconductor device includes (a) providing a substrate and (b) forming a film including a first element, a second element and a third element in a same group as the second element on the substrate by performing a cycle a predetermined number of times, the cycle including: (b-1) supplying a halogen-based source gas including the first element to the substrate; (b-2) supplying a first reactive gas including the second element and reactive with the halogen-based source gas; and (b-3) supplying a second reactive gas including the third element without mixing the second reactive gas with the first reactive gas, wherein the second reactive gas is reactive with the halogen-based source gas and unreactive with the first reactive gas.

Method of manufacturing semiconductor device and substrate processing apparatus

A method of processing a substrate includes: growing a first layer including a first element and a second element by supplying a first precursor containing the first element and a second precursor containing the second element to the substrate; and growing a second layer including the second element and a third element by supplying the second precursor and a third precursor containing the third element to the substrate. The act of growing the first layer and the act of growing the second layer are alternately performed a predetermined number of times, and the act of growing the first layer is performed before the act of growing the second layer to selectively grow a laminated film on a conductive film exposed on the surface of the substrate. The first layer and the second layer are laminated to form the laminated film.

Method of processing substrate, substrate processing apparatus, and recording medium

A method of manufacturing a semiconductor device includes: (a) supplying a halogen-based source gas containing a first element to a substrate; (b) supplying a reaction gas containing a second element to react with the first element to the substrate; (c) forming a first layer containing the first element and the second element by time-dividing and performing (a) and (b) a predetermined number of times; (d) supplying an organic source gas containing the first element to the substrate; (e) supplying the reaction gas to the substrate; (f) forming a second layer containing the first element and the second element by time-dividing and performing (d) and (e) a predetermined number of times; and (g) forming a thin film containing the first element and the second element on the substrate by time-dividing and performing (c) and (f) a predetermined number of times.

Method of manufacturing a semiconductor device

A method of manufacturing a semiconductor device including alternately repeating a process of forming a first metal oxide film including a first metal element and a process of forming a second metal oxide film including a second metal element on a substrate accommodated in a processing chamber, so as to form a third metal oxide film including the first and second metal elements with a predetermined composition ratio on the substrate. One of the first and second metal elements of the third metal oxide film has a concentration higher than a concentration of the other, and one of the first and second metal oxide films including the higher-concentration metal element is formed in a chemical vapor deposition (CVD) mode or an atomic layer deposition (ALD) saturation mode, and the other of the first and second metal oxide films is formed in an ALD unsaturation mode.

Growing community of inventors

Toyama, Japan

Masahito Kitamura