Tokyo Electron Limited

Masahito Hamada

Shinji Kobayashi

Tetsushi Miyamoto

Hiroichi Inada

Masatoshi Kaneda

Norihiko Sasagawa

Kotaro Ooishi

Shigenori Kamei

Yuji Matsuyama

Yoshiki Okamoto

Hideo Funakoshi

Fumio Hirota

Disclosed is a chemical liquid discharge mechanism. The mechanism includes: a storage portion including a chemical liquid storage space; a diluent supply port opened to supply a diluent for reducing a viscosity of the chemical liquid to the storage space; a vertex flow forming portion that forms vortex flows in the diluent and the chemical liquid by supplying a fluid to the storage space to stir the diluent and the chemical liquid; and a liquid discharge port opened to an upper side of the diluent supply port in the storage space such that, by the supply of the diluent, the diluent and the chemical liquid flow into the liquid discharge port to be discharged from the storage space. Thus, the viscosity of the waste liquid discharged from the liquid discharge port may be reduced, and thus, it is not necessary to largely set the inclination of the liquid discharge path.

Chemical liquid discharge mechanism, liquid processing apparatus, chemical liquid discharge method, and storage medium

A film removing device includes an approach stage having a flat approach part having a surface substantially flush with the surface of a substrate supported on a support member. The flat approach part faces a first side surface of the substrate at a corner of the substrate where the first side surface and a second side surface of the substrate join. A film removing nozzle spouts a solvent toward a peripheral part of the substrate and sucks a solution while being moved along the second side surface and the approach stage. A gas is spouted into a gap between the flat approach part and the corner of the substrate so that the gas flows through the gap toward the second side surface.

Film removing device and film removing method

There is provided a coating and processing apparatus including a spin chuck horizontally holding a quadrangular substrate and rotating the substrate in a horizontal plane, a coating solution nozzle for supplying a coating solution to a front surface of the substrate horizontally held by the spin chuck, and a solvent supply mechanism provided in the spin chuck for supplying a solvent to a back surface of the substrate, in which the solvent supplied to the back surface of the substrate is allowed to reach the back surface and side surface of each of corners of the substrate by centrifugal force, thereby removing the coating solution attached.

Coating and processing apparatus and method

In a liquid processing apparatus for forming a coating film on a polygonal substrate by spin coating in an ambient with a descending clean air flow, a spin chuck includes a support plate for substantially horizontally supporting the substrate thereon. Air flow control members are provided on the spin chuck such that the air flow control member being disposed adjacent to a periphery of the polygonal substrate supported on the spin chuck, wherein the air flow control member is not provided near corner portions of the substrate supported on the spin chuck. The liquid processing apparatus may includes an air flow regulation ring which is provided with an air inlet having an opening surrounding an outer periphery of the air flow control member, wherein the air inlet communicates with the exhaust unit.

Liquid processing apparatus and liquid processing method

A device includes a rotary base; an approach stage; a substrate holding table and a nozzle head. The substrate holding table holds the work by suction, and comes into intimate contact with the approach stage and the rotary base through first and second annular seal members to form a liquid storage space, respectively. When the suction holding and the intimate contact are released, the substrate becomes rotatable together with the rotary base and the approach stage.

Development processing device

In the present invention, a gas flow restraining ring facing corner portions of the front face of a substrate horizontally held on a substrate holding unit and movable up and down, is set to a predetermined height in accordance with a coating treatment. Then, a coating solution containing a coating film forming component and a solvent is applied to the front face of the substrate and spread into a thin film state by a so-called spin coating method, and thereafter the substrate is rotated at a high speed so that the coating solution is dried. In this case, it is possible to control fresh gas flow from above the substrate to decrease the difference in evaporation rate of the solvent between the coating solution on the corner portions of the substrate and the coating solution inside them, thus enabling the coating treatment uniform within a plane on the substrate.

Coating treatment apparatus and coating treatment method

A current member is disposed above a wafer holding section for holding a wafer and a top plate and a bottom plate of the current member are positioned so that respective air holes are overlapped each other in a vertical direction, and a developing solution is heaped on a front face of the wafer. Thereafter, the developing is performed with the bottom plate of the current member slid in a lateral direction so that the air holes are not overlapped each other in the vertical direction. In this configuration, air streams to the wafer are obstructed during the developing because the air holes in the current member are obstructed in the vertical direction, whereby occurrence of temperature distribution of the developing solution within the plane of the wafer caused by flows of air currents to the wafer is prevented and uniform developing processing can be performed.

Growing community of inventors

Kumamoto, Japan

Masahito Hamada