Sharp Kabushiki Kaisha Corporation

Masahito Gotoh

Tohru Ueda

Yoshinori Higami

The active matrix substrate of the invention includes: a storage capacitor formed on a board; a first insulating layer formed on the storage capacitor; a semiconductor layer formed above the storage capacitor via the first insulating layer: a gate insulating layer formed on the semiconductor layer; a gate electrode layer including a gate electrode formed above the semiconductor layer via the gate insulating layer; a second insulating layer covering the gate electrode layer and the semiconductor layer; a first light-shielding layer formed above the semiconductor layer via the second insulating layer to cover at least a channel region of the semiconductor layer; a third insulating layer formed on the first light-shielding layer; a source electrode layer including source and drain electrodes formed on the third insulating layer; a fourth insulating layer formed on the source electrode layer; and a pixel electrode formed on the fourth insulating layer and electrically connected to the drain electrode. The first light-shielding layer is conductive and has a drain-side light-shielding portion electrically connected to one of a pair of electrodes of the storage capacitor and also to the drain electrode.

Active matrix substrate and display device

An object of the invention is to provide a semiconductor apparatus which simplifies a structure and reduces a possibility of occurrence of manufacture defect. Two of a first TFT and a second TFT which adjoins each other in a first direction are integrated in one semiconductor piece and share a source region electrically connected to a signal line and are formed in a symmetric shape in relation to a reference plane. Two scanning lines which extend in a second direction perpendicular to the first direction and are electrically connected to channel regions of the first and second TFTs and auxiliary capacitor electrodes for forming auxiliary capacitor between the auxiliary capacitor electrodes and drain electrodes electrically connected to the first and second TFTs are symmetrically arranged in relation to the reference plane.

Semiconductor apparatus

An a-Si film is formed on the whole surface of a quartz substrate , and a protection film is formed in a region to be used as a display unit on the a-Si film . Subsequently, after a catalyst metal is selectively introduced into the whole surface of a region to be used as a peripheral drive circuit on the a-Si film , crystal growth is allowed by heating the a-Si film to form a CG silicon film and a p-Si film . Then, the catalyst metal in the CG silicon film and the p-Si film is removed by gettering. The concentration of the catalyst metal in the CG silicon film is in the range of 1&times;10 atoms/cm or higher and lower than 1&times;10 atoms/cm . The concentration of the catalyst metal in the p-Si film for a display unit is made lower than the concentration of the catalyst metal in the CG silicon film for a peripheral drive circuit. Thereby, a semiconductor device having a driver monolithic type liquid crystal display device with high intensity, high precision and uniform characteristics can be achieved.

Growing community of inventors

Fukuyama, Japan

Masahito Gotoh