Tdk Corporation

Masahito Furukawa

Taku Masai

Daisuke Tanaka

Takeo Tsukada

Masamitsu Haemori

Hitoshi Saita

Masaru Nanao

Yoshiko Gokita

Masanori Kosuda

Goushi Tauchi

Junichi Yamazaki

Tomohisa Azuma

Saori Takeda

Satoshi Wada

Kenji Horino

Hiroki Uchiyama

Shogo Murosawa

Shirou Ootsuki

Hideya Sakamoto

Tomoya Imura

Wakiko Sato

Toshio Asahi

Keisuke Itakura

Hajime Nagata

Yuji Hiruma

Kazutaka Suzuki

Masakazu Hirose

Dai Matsuoka

Satoshi Ozawa

Makoto Morita

Yasuharu Miyauchi

Tomofumi Kuroda

Tadashi Takenaka

Saori Takahashi

Masatada Yodogawa

Yoshikazu Shimura

Kenta Ishii

Tamotsu Ishiyama

Hiroki Katoh

Satoko Ueda

Yuko Saya

Yuji Sezai

Hideaki Sone

Keisuke Teranishi

Norimasa Sakamoto

Tatsuji Sano

Syuuzi Itoh

Masayoshi Inoue

Kumiko Iezumi

Kouhei Ohhashi

Yasunori Harada

Shintaro Ueno

Yuya Hattori

Yumiko Kozasa

Minami Kudoh

Takumi Satou

Hitomi Naitou

Toshiyuki Yamazaki

Naoyoshi Satou

Shougo Murosawa

To provide a dielectric composition having excellent reliability. The dielectric composition contains a main component represented by a composition formula (SrCa)(TiHf)ON, in which 0.15&#x3c;x&#x2264;0.90, 0&#x3c;y&#x2264;0.15, 0.90&#x2264;m&#x2264;1.15, 0&#x3c;&#x3b4;&#x2264;0.05 are satisfied.

Dielectric composition, dielectric thin film, dielectric element, and electronic circuit board

A dielectric film may be exposed to an acid solution such as hydrochloric acid, nitric acid, or sulfuric acid during a wet process after film formation. The inventors have newly found that when a dielectric film includes Zr having a lower ionization tendency than Ti in a main component of a metal oxide expressed by a general formula (Ba, Ca)(Ti, Zr)Ois provided and satisfies at least one between relationships such that degree of orientation of (100) plane is higher than degree of orientation of (110) plane, and degree of orientation of (111) plane is higher than degree of orientation of (110) plane in a film thickness direction, the dielectric film is less likely to be damaged during a wet process, and the resistance to a wet process is improved.

Dielectric film, dielectric element, and electronic circuit board

A dielectric thin film contains Ca, Sr, Ti, Hf, O and N, wherein among crystal grains existing in a plane field of view of 1 &#x3bc;m square perpendicular to a film thickness direction of the dielectric thin film, a number ratio of crystal grains having a grain size of 19 nm or more and less than 140 nm is 95% or more, among the crystal grains existing in the plane field of view, a number ratio of first crystal grains having a grain size of 65 nm or more and less than 77 nm is 20% or more, and among the crystal grains existing in the plane field of view, a number ratio of second crystal grains having a grain size of 19 nm or more and less than 54 nm is 40% or less.

Dielectric thin film, dielectric element and electronic circuit board

A composite structure including a conductor region that is configured from a first oxide, and an insulator region that is configured from a second oxide and that surrounds the conductor region, wherein the first oxide and the second oxide are in hetero structure with each other. A powder and a fired body each having such a composite structure are also preferable.

Composite structure, fired body having composite structure, powder including particle having composite structure, and dielectric element including dielectric having composite structure

A dielectric membrane may be exposed to an acid solution such as hydrochloric acid, nitric acid, or sulfuric acid during a wet process after membrane formation. The inventors have newly found that when a dielectric membrane includes Ca having a lower ionization tendency than Ba and Zr having a lower ionization tendency than Ti in a main component of a metal oxide expressed by a general formula (Ba, Ca)(Ti, Zr)Oand satisfies at least one of degree of orientation of (100) plane&#x3e;degree of orientation of (110) plane and degree of orientation of (111) plane&#x3e;degree of orientation of (110) plane in a membrane thickness direction, the dielectric membrane is less likely to be damaged during a wet process, and the resistance to a wet process is improved.

Dielectric membrane and dielectric element

A piezoelectric ceramic sputtering target containing a perovskite type oxide represented by chemical formula (I) of ABOas a main component, wherein the component A of the chemical formula (I) contains at least K (potassium) and/or Na (sodium), the component B of the chemical formula (I) contains at least one selected from the group consisting of Nb (niobium), Ta (tantalum) and Zr (zirconium) with Nb (niobium) as a necessity, the piezoelectric ceramic sputtering target is composed of a plurality of crystal grains and grain boundaries existing among the crystal grains, and in the grain boundary, the molar ratio of at least one of Nb (niobium), Ta (tantalum), and Zr (zirconium) in the B components is higher than the molar ratio in the interior of the crystal grains by 30% or more.

Piezoelectric ceramic sputtering target, lead-free piezoelectric thin film and piezoelectric thin film element using the same

A composite piezoelectric ceramic includes a compact of crystal particles including at least one of potassium niobate (KNbO) and sodium niobate (NaNbO) and optionally further including lithium niobate (LiNbO), and a layer containing barium titanate (BaTiO) that is disposed on the surface of the compact while forming a heterojunction with the compact. A piezoelectric device includes the composite piezoelectric ceramic.

Composite piezoelectric ceramic and piezoelectric device

The present invention relates to a dielectric element such as a thin-film capacitor including a dielectric film. The dielectric film contains a main component represented by the general formula (BaCa)(TiZr)Owherein 0&#x3c;x&#x2264;0.500, 0&#x3c;y&#x2264;0.350, and 0.900&#x2264;z&#x2264;0.995. The dielectric film includes a layer containing columnar crystal grains and a layer containing spherical crystal grains, and contains as a sub-component at least one of divalent metal elements and trivalent metal elements.

Dielectric film and dielectric element

A thin-film dielectric having a higher dielectric constant than usual ones and not requiring a special single crystal substrate, and a large-capacity thin-film capacitor element using the thin-film dielectric, in which a BaTiO-based perovskite solid solution and a KNbO-based perovskite solid solution are alternately formed to form a crystal structure gradient region where a lattice constant continuously changes at the interface, and thus crystal lattice strain occurs, thereby permitting the production of a thin-film dielectric having a high dielectric constant; also, a large-capacity thin-film capacitor element can be produced by using the thin-film dielectric of the present invention.

Thin-film dielectric and thin-film capacitor element

The present invention aims to provide a piezoelectric composition and a piezoelectric element. In the piezoelectric composition, the main component is represented by the following formula with a perovskite type structure,(BiNa)(TiMgMe)Owherein, 0.05&#x2266;x&#x2266;0.7, 0.01&#x2266;y&#x2266;0.7, 0.01&#x2266;z&#x2266;0.6, 0.75&#x2266;m&#x2266;1.0, x+y+z=1 and the transition metal element Me is any one or more selected from the group consisting of Mn, Cr, Fe and Co.

Piezoelectric composition and piezoelectric element

The present invention aims to provide an excellent piezoelectric composition and an excellent piezoelectric element if the piezoelectric properties especially a high spontaneous polarization and a sufficiently high resistivity, the low pollution, the environment and the ecology are considered. In the piezoelectric composition, the main component contains the substance represented by the following formula with a perovskite-typed structure, (BiNa)(TiMgAl)O. Wherein, 0.01&#x2266;x&#x2266;0.8, 0.2&#x2266;y&#x2266;0.8, 0.01&#x2266;z&#x2266;0.6, 0.75&#x2266;m&#x2266;1.0, and x+y+z=1.

Provided is a piezoelectric composition containing a major component that is a perovskite-type oxide which is represented by the general formula ABO, which contains no Pb, and which has A-sites containing Bi, Na, and K and B-sites containing Ti. The Ti is partly substituted with a transition metal element Me that is at least one selected from the group consisting of Mn, Cr, Fe, and Co. The content of Bi and the transition metal element Me in the perovskite-type oxide, which is the major component, is 6 mole percent to 43 mole percent in terms of BiMeO.

Piezoelectric composition and piezoelectric device

To provide a dielectric ceramic composition having a high dielectric constant, i.e., 3,000 or more, at elevated temperatures at or above 150&#xb0; C. and having a practically sufficient relative dielectric constant at an applied DC electric field of 2 V/&#x3bc;m, and to provide a dielectric device including such a dielectric ceramic composition, a dielectric ceramic composition is a composite oxide represented by formula (1):{[(BiNa)(BiK)Ba]Na}TiNbO&#x2003;&#x2003;(1)where a, b, c, d, s, t, u, v, and x are numbers satisfying the following conditions:

Dielectric ceramic composition and dielectric device

The present invention relates to a dielectric ceramic composition which is complex oxides represented by the following formula (1), {[(BiNa)(BiK)Ba]A}TiNbO(1), wherein, in formula (1), A represents at least one element selected from the group consisting of Li, Na and K, and a, b, c, d, s, t, u, v and x are numbers respectively satisfying the following formulae, 0.10&#x2266;a&#x2266;0.95, 0.00&#x3c;b&#x2266;0.85, 0.05&#x2266;c&#x2266;0.70, a+b+c=1, 0.10&#x2266;d&#x2266;0.50, 0.90&#x2266;s+u&#x2266;1.00, 0.45&#x2266;t&#x2266;0.50, 0.45&#x2266;v&#x2266;0.50 and 0.95&#x2266;x&#x2266;1.05.

Dielectric ceramic composition and dielectric element

A dielectric film contains as a main component a dielectric composition represented by the general formula (BaCa)(TiZr)Owherein 0.001&#x2266;x&#x2266;0.400, 0.001&#x2266;y&#x2266;0.400, and 0.900&#x2266;z&#x3c;0.995. In an X-ray diffraction pattern of the dielectric composition, the dielectric composition has the relation 0.00&#xb0;&#x2266;2&#x3b8;&#x2212;2&#x3b8;&#x3c;0.20&#xb0; between (001) plane diffraction peak position 2&#x3b8;of a tetragonal structure represented by the general formula and (100) plane diffraction peak position 2&#x3b8;of a cubic structure represented by the general formula.

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Tokyo, Japan

Masahito Furukawa