Kawasaki Jukogyo Kabushiki Kaisha

Nec Corporation

International Superconductivity Technology Center

Masahito Ban

Makoto Ryoji

Takeshi Hasegawa

Yukitaka Mori

Katsumi Suzuki

Youichi Enomoto

Masakuni Tokai

Tsuyoshi Takenaka

A plurality of extracting orifices,for extracting the electron beam from a discharge portion,into a plasma process chamber,via a compartment,are provided radially. A plurality of accelerating electrodes,are arranged in the process chamber,. The electron extracting direction from the extracting orifices,is set in substantially parallel with an object surface,. The number and the arrangement of the accelerating electrodes,are set such that a density distribution of the excited plasma has an oprimal state for processing the object. The object having a large area can be processed appropriately.

Plasma processing equipment

The present invention provides an electron-beam excited plasma generator which can effectively form samples of larger areas. The electron-beam excited plasma generator according to the present invention comprises a cathode (11) for emitting thermions; a discharge electrode (23) for gas discharge between the cathode and the same; an intermediate electrode (13) positioned coaxially with the discharge electrode in an axial direction; a discharge chamber (2) to be filled with discharge gas plasma generated by the gas discharge between the cathode and the discharge electrode; a plasma processing chamber (3) formed adjacent to the discharge chamber with a partition wall (21) disposed therebetween and positioned so that a surface-to-be-processed of a workpiece-to-be-processed (35) is positioned perpendicular to the axial direction; a plurality of orifices (22) for pulling out electrons in the discharge gas plasma in the discharge chamber into the plasma processing chamber, each being formed in the partition wall substantially perpendicular to the axial line and distributed radially with respect to the axial direction; and an accelerating electrode (31) disposed in the plasma processing chamber for pulling out and accelerating the electrons through the orifices.

Electron-beam excited plasma generator with side orifices in the

A superconductive device manufacturing method is disclosed, which can prevent the characteristic deterioration on the processed surface, reduce the number of process steps, and thereby shorten the manufacturing time. The superconductive device manufacturing method comprises the steps of: forming a YBCO film (301) on a substrate (201); forming a mask pattern (302) on the formed YBCO film (301); and etching the YBCO film (301) by use of the formed mask pattern (302) and a plasma including at least oxygen plasma.

Superconductive device manufacturing method

Growing community of inventors

Noda, Japan

Masahito Ban