Ebara Corporation

Taisho Pharmaceutical Co., Ltd.

Masahito Abe

Tsutomu Nakada

Yuji Araki

Kuniaki Horie

Hidenao Suzuki

Takeshi Murakami

Hiroyuki Ueyama

Fumio Kuriyama

Kiwamu Tsukamoto

Yukio Fukunaga

Mitsunao Shibasaki

Ryo Suzuki

Hiroyuki Shinozaki

Hiroshi Ohta

Naoaki Ogure

Dai Nozawa

Yuko Araki

Chikako Takatoh

Shohei Shima

Masao Saitoh

Aya Futamura

Yumiko Nakamura

Megumi Uno

Toshiya Kon

In a method for determining cleanliness of a cleaning member that contacts a substrate and with which scrub cleaning is performed, the method includes a first step of self-cleaning a cleaning member by releasing contaminants from the cleaning member into a cleaning liquid, and a second step of bringing a self-cleaning discharged liquid into contact with an electrode of a crystal oscillator, attaching the contaminants contained in the discharged liquid onto the electrode of the crystal oscillator, then measuring a frequency response of the crystal oscillator in which the contaminants are attached onto the electrode, and determining cleanliness of the cleaning member based on the measured frequency response.

Method for determining a cleanliness of a cleaning member

A heteroaromatic methyl cyclic amine derivative represented by formula (IA) or a pharmaceutically acceptable salt thereof is useful for treatment or prophylaxis of diseases such as sleep disorder, depression, anxiety disorder, panic disorder, schizophrenia, drug dependence, Alzheimer's disease, Parkinson's disease, Huntington's disease, eating disorder, cephalalgia, hemicrania, pain, digestive diseases, epilepsy, inflammation, immune-related diseases, endocrine-related diseases and hypertension, on the basis of an orexin (OX) receptor antagonist activity. 

Heteroaromatic methyl cyclic amine derivative

A trap apparatus is optimum for trapping a material gas discharged from a vapor deposition apparatus for depositing in a vapor phase thin films of high-dielectric or ferroelectric such as barium/strontium titanates on substrates. The trap apparatus is disposed downstream of a vacuum process chamber. The vacuum process chamber is for processing a substrate. The trap apparatus is for trapping a component having a low vapor pressure contained in a gas discharged from the vacuum process chamber. The trap apparatus includes a trap container for introducing the gas discharged from the vacuum process chamber, and a cooling device provided in the trap container for cooling the gas to a temperature equal to or lower than a condensing temperature of a gas component which is contained in the gas and easily liquidized.

Trap apparatus

A substrate processing apparatus forms a thin film of high-dielectric or ferroelectric such as barium/strontium titanates, or a copper film for wiring on a substrate, and has a gas ejection head for individually introducing at least two gases including a material gas and ejecting the gases toward a substrate to be processed. The gas ejection head has at least two gas passageways for individually introducing the two gases, and at least two temperature control devices for individually controlling temperatures of the gases flowing through the gas passageways.

Apparatus and method for processing substrate

A chemical vapor deposition apparatus for depositing a thin film of highly dielectric materials for giga-capacity memory devices can reliably clean reaction products formed within the deposition chamber without sacrificing the production efficiency. The apparatus comprises a hermetic deposition chamber containing a substrate holding section for supporting a substrate, and a gas supply head disposed opposite to the substrate holding section for directing a gaseous feed material onto the substrate. There are provided a trapping member supporting device for supporting a trapping member so as to be opposite to a target cleaning area inside the deposition chamber, and a plasma generation device for generating a plasma between the target cleaning area and the trapping member supported by the trapping member supporting device.

Chemical vapor deposition apparatus and cleaning method thereof

A compact vaporizer system is presented to produce a high quality vapor feed from a liquid feed to be delivered to a chemical vapor deposition processing chamber to produce thin film devices based on highly dielectric or ferroelectric materials such as BaTiO,, SrTiO,and other such materials. The vaporization apparatus comprises a feed tank for storing the liquid feed; feed delivery means for transporting the liquid feed by way of a feed delivery path; a vaporizer section disposed in the delivery path comprising a high temperature heat exchanger having a capillary tube for transporting the liquid feed and a heat source for externally heating the capillary tube; and a vaporization prevention section disposed upstream of the vaporizer section for preventing effects of the vaporizer section to the liquid feed within the vaporization prevention section.

Liquid feed vaporization system and gas injection device

A compact vaporizer system is presented to produce a high quality vapor feed from a liquid feed to be delivered to a chemical vapor deposition processing chamber to produce thin film devices based on highly dielectric or ferroelectric materials such as BaTiO,, SrTiO,and others such materials. The vaporization apparatus comprises a feed tank for storing the liquid feed; feed delivery means for transporting the liquid feed by way of a feed delivery path; a vaporizer section disposed in the delivery path comprising a high temperature heat exchanger having a capillary tube for transporting the liquid feed and a heat source for externally heating the capillary tube; and a vaporization prevention section disposed upstream of the vaporizer section for preventing heating effects of the vaporizer section to the liquid feed within the vaporization prevention section.

A vapor-phase film growth apparatus includes a substrate holder for holding a substrate, a gas ejection head, and a radiant heat shield device. The substrate holder has a substrate heater therein, and the gas ejection head has a gas injection surface for ejecting a material gas toward a substrate held by the substrate holder. The radiant heat shield device is disposed between the substrate holder and the gas injection head in confronting relationship to the gas injection surface of the gas ejection nozzle. The substantially planar radiant heat shield device is permeable to gases and has a heating capability.

Vapor-phase film growth apparatus and gas ejection head

A vapor feed supply system including a vaporizer device and a method of cleaning a vapor flow region employing such a vaporizer device enables thorough cleaning of the system, without having to degrade the overall system vacuum in the process of cleaning the vaporizer device. The method includes defining a cleaning fluid passage having a predetermined withstand pressure by isolating a cleaning region of the vapor flow region, and flowing a cleaning fluid into the cleaning fluid passage under a pressure so as to enable the cleaning fluid to remain in a liquid state at a cleaning temperature of the cleaning region.

Vapor feed supply system

A vaporizer apparatus efficiently vaporizes difficult-to-vaporize materials such as complex feed materials for producing a high dielectric or ferroelectric material. The vaporizer apparatus includes a vaporizing passage formed by a pair of opposed walls separated by a minute spacing to a liquid feed entrance provided at one end of the vaporizing passage, a vaporized feed exit provided at an opposite end of the vaporizing passage, and a heating arrangement for heating the walls to a temperature in excess of a vaporizing temperature of the liquid feed so that the liquid feed material may be guided into the vaporizing passage to be vaporized.

Growing community of inventors

Fujisawa, Japan

Masahito Abe