Ulvac, Inc.

Masahisa Ueda

Koukou Suu

Takashi Kurimoto

Toshiya Yogo

Yutaka Kokaze

Kyuzo Nakamura

Michio Ishikawa

Daisuke Hironiwa

Kazushige Komatsu

Nobusuke Tachibana

Yoshiaki Yoshida

Mitsuhiro Endou

Toshiya Miyazaki

A manufacturing method for an electronic component according to an aspect of the present invention includes: forming a first metal layer on a substrate; forming a second metal layer on the first metal layer; forming a mask made of an organic resin layer on the second metal layer; performing plasma etching on the second metal layer by using a reactant gas including fluorine via the mask to thereby form a recess portion in a layered film of the organic resin layer and the second metal layer; performing oxygen ashing treatment on an inner surface of the recess portion; and forming a third metal layer in the recess portion by electroplating treatment after the oxygen ashing treatment.

Manufacturing method for electronic component

An ashing device that prevents the ashing rate from changing over time. The ashing device ashes organic material on a substrate including an exposed metal in a processing chamber. The ashing device includes a path, which is formed in the processing chamber and through which active species supplied to the processing chamber pass. The path is defined by a surface on which the metal scattered from the substrate by the active species is collectible, with the surface being formed so as to expose a metal that is of the same kind.

Ashing device

A method for operating a substrate processing apparatus is provided which can contain generation of particles by generating plasma in a stable manner. After a substrate is disposed in an evacuated vacuum chamber, a rare gas is initially supplied into the vacuum chamber, a voltage is applied to a plasma generating means, and plasma of the rare gas is generated. Subsequently, a reaction gas is supplied into the vacuum chamber, the reaction gas is brought into contact with the plasma of the rare gas, and plasma of the reaction gas is generated. The plasma of the reaction gas is brought into contact with the substrate; and the substrate is processed. Plasma is stably generated not by turning the reaction gas into plasma but by first turning the rare gas into plasma by the plasma generating means, and generation of particles is subsequently suppressed.

Method for operating substrate processing apparatus

Disclosed is an ashing apparatus and its method of manufacture wherein decrease in processing efficiency is suppressed. Specifically, a shower plate is arranged to face a substrate stage on which a substrate is placed, and diffuses oxygen radicals supplied into a chamber. A metal blocking plate is arranged between the shower plate and the substrate stage and has a through hole through which oxygen radicals pass. In addition, the metal blocking plate has a first layer, which is made of a metal same as the one exposed in the substrate, on the surface facing the substrate.

Ashing apparatus

This dry cleaning method for a plasma processing apparatus is a dry cleaning method for a plasma processing apparatus that includes: a vacuum container provided with a dielectric member; a planar electrode and a high-frequency antenna that are provided outside the dielectric member; and a high-frequency power source that supplies high-frequency power to both the high-frequency antenna and the planar electrode, to thereby introduce high-frequency power into the vacuum container via the dielectric member and produce an inductively-coupled plasma, the method comprising the steps of: introducing a gas including fluorine into the vacuum container and also introducing high-frequency power into the vacuum container from the high-frequency power source, to thereby produce an inductively-coupled plasma in the gas including fluorine; and by use of the inductively-coupled plasma, removing a product including at least one of a precious metal and a ferroelectric that is adhered to the dielectric member.

Growing community of inventors

Susono, Japan

Masahisa Ueda