Nippon Telegraph and Telephone Corporation

Nippon Telegraph and Telephone Public Corporation

Sharp Kabushiki Kaisha Corporation

Masahiro Yoshizawa

Kou Wada

Akira Kikuchi

Nobuo Shimazu

Minpei Fujinami

Kenichi Saito

Tadao Takeda

Kazuhiro Yaegawa

Ryuichi Ogawa

Masaki Wakabayashi

Tetsuma Sakurai

Susumu Kurioka

Kenji Ohno

Hiroki Sutou

A 1-chip microcomputer of the present invention has (a) a monitor flag for setting a flag indicating that a specified address space is accessed, (b) an access permission address range setting register, for setting an address range in which an access is permitted while the flag is set, (c) an access permission area detection circuit for judging whether the access is made within the address range thus set, (d) an access permission setting register, for setting whether or not an access with respect to an address other than the address range should be permitted, and (e) memory read-out control circuit and memory writing control circuit for controlling an access with respect to a nonvolatile memory based on a result thus judged and content set by the access permission setting register. With the arrangement, it is possible to provide a 1-chip microcomputer that maintains the security among application programs.

1-chip microcomputer having controlled access to a memory and IC card using the 1-chip microcomputer

Production schedules are executed for production machines and lots having high importance or priority from among lots being objects of production process by the production machines, and progress of production process is managed by a scheduler based on the production schedules. For those lots whose progresses are delayed, the production schedules are automatically adjusted by the scheduler so that the delays can be eliminated.

Production management system and its application method

A method and apparatus for testing an integrated electronic device wherein the integrated electronic device to be tested is placed on a sample table. A predetermined position of the integrated electronic device is irradiated with the primary charged beam. A substrate current flowing through a substrate of the integrated electronic device is measured upon radiation of the primary charged beam, and then a potential of the predetermined position irradiated with the primary charged beam is nondestructively measured in accordance with secondary electrons emitted from the predetermined position. A function of the integrated electronic device is evaluated in accordance with the substrate current and the predetermined position potential. The function to be evaluated includes leakage characteristics and a capacitance.

Method and apparatus for evaluating the capacitance of an integrated

A charged beam radiation apparatus includes an auxiliary charged beam emitting mechanism, a main charged beam emitting mechanism, a secondary electron detector, and a computer as a controller. The auxiliary charged beam emitting mechanism emits an auxiliary charged beam of a given acceleration voltage onto a predetermined portion of an electronic device to be measured. The main charged beam emitting mechanism emits a main charged beam of an acceleration voltage lower than that of the auxiliary charged beam onto the predetermined portion and the vicinity of the predetermined portion. The secondary electron detector detects secondary electrons generated from a portion irradiated by the main charged beam. The controller measures a change in a secondary electron signal from the secondary electron detector.

Charged beam radiation apparatus

A method and apparatus for testing an integrated electronic device wherein the integrated electronic device to be tested is placed on a sample table. A predetermined position of the integrated electronic device is irradiated with the primary charged beam. A substrate current flowing through a substrate of the integrated electronic device is measured upon radiation of the primary charged beam, and then a potential of the predetermined position irradiated with the primary charged beam is nondestructively measured in accordance with secondary electrons emitted from the predetermined position. A function of the integrated electronic device is evaluated in accordance with the substrate current and the predetermined position potential. The function to be evaluated include leakage characteristics and a capacitance.

Method and apparatus for testing integrated electronic device

Observing a surface using a charged particle beam

In a characteristic test apparatus for an electronic device, a number of voltage supply beams are radiated onto predetermined irradiation positions of the electronic device placed on a sample table. In addition, a potential measuring beam is radiated onto a number of irradiation positions including the predetermined irradiation positions of the voltage supply beams. A secondary electron signal based on the potential measuring beam is detected to measure a potential. When the irradiation position of the potential measuring beam coincides with that of the voltage supply beam, the voltage supply beam is controlled to adjust a potential at the irradiation position to a set value by controlling, e.g., an acceleration power source for the voltage supply beam. When the irradiation position of the potential measuring beam is different from that of the voltage supply beam, a potential at this position is measured. Then, characteristics of the electronic device are calculated based on the obtained potentials at the respective irradiation positions.

Characteristic test apparatus for electronic device and method for using

Growing community of inventors

Kanagawa, Japan

Masahiro Yoshizawa