Fujitsu Corporation

Hoya Corporation

Canon Kabushiki Kaisha

Hitachi, Ltd.

Honda Giken Kogyo Kabushiki Kaisha

Renesas Electronics Corporation

Jfe Steel Corporation

Sumitomo Electric Industries, Limited

Oki Electric Industry Co., Ltd.

Kanto Chemical Co., Inc.

Honda Motor Co., Ltd.

Mitutoyo Corporation

Oki Semiconductor Co., Ltd.

Tachi-S Co., Ltd.

Tombow Pencil Co., Ltd.

Masahiro Yoshida

Junichi Kato

Tadashi Matsumura

Yasushi Shimizu

Teruo Yamashita

Masaya Tajima

Katsuhiro Ishida

Yukio Otobe

Nobuaki Otaka

Satoru Inami

Seiichi Shinohara

Hiroyuki Oba

Yusuke Nakazono

Hiroshi Satoh

Toshio Ueda

Tomohiko Muroyama

Kyo Takahashi

Yoshiatsu Yokoo

Yoshitoshi Hagiwara

Kiyotaka Ogawa

Taichi Ohno

Hiroyuki Takahashi

Akio Mukoh

Kenji Suzuki

Satoshi Sunahara

Hisao Yokokura

Teruo Kitamura

Mikio Sato

Koichi Suwa

Yoshiaki Okabe

Tsunenori Fujii

Shintaroo Hattori

Takeshi Obata

Lihong Zhang

Taichi Oono

Yoshikane Shinkuma

Hisashi Okawa

Kaoru Koto

Yoshitsugu Suzuki

Hideki Matsumoto

Yoshishige Takano

Yusuke Fushiwaki

Keiji Okano

Yoshiharu Sugimoto

Jun Hariu

Katsuyoshi Kondoh

Kenji Uchiyama

Ken Uno

Yoshihiro Takashimizu

Yukinori Yamashita

Toshiaki Anzai

Katsumi Utsugi

Tsunehiko Takakusagi

Gakuei Shibata

Joshiro Sato

Hiromichi Okamura

Nobuo Kimura

Toshio Saito

Yoichi Hirai

Tadashi Matumura

Hiroshi Sato

Atsushi Numagami

Toshiyuki Karakama

Xuelu Zou

Sankichi Takahashi

Akira Matsuzaki

Atsutoshi Ando

Satoru Ando

Tomohiro Watanabe

Akihito Kobayashi

Harumi Matsuzaki

Katsuya Ebara

Masayuki Fujita

Akira Murakami

Yoshio Tabata

Yoshinori Iguchi

Tadao Nakaya

Hiroyuki Maruyama

Toshihiro Kasuga

Noriyuki Yasu

Kunihiro Notsu

Motoki Sotani

Akira Watanabe

Kiichi Nakajima

Norihisa Ishii

Atsushi Takakura

Reikou Fukazaki

Noriaki Yamazaki

Koichi Ohta

Seigo Umeda

Toshimi Mukushi

Atsushi Watabe

Hirotoshi Kakegawa

Yasuhito Arikawa

Fumiaki Harada

Hisayoshi Kageyama

You Ohgami

Fuyuki Hosakawa

Tomoko Uno

Before an active program replacement is carried out, a storage controller confirms a communication state between a redundant storage controller having a redundant configuration with the storage controller and the second storage device, and prohibits, in a case where an abnormality is detected in the communication state between the redundant storage controller and the second storage device, the active program replacement of the first storage controller. This inhibits occurrence of system down when active firmware replacement process is to be carried out in a storage system including multiple storage devices connected to one another.

Active firmware replacement in storage system and in storage controller, and computer-readable recording medium having stored therein program for active firmware replacement in controlling storage

During degeneration processing in which a first electronic device is degenerated based on an abnormality which has occurred in the first electronic device among the plurality of electronic devices after a new firmware used for switching of firmware of the electronic devices is stored in the first memories of the electronic devices, a storage control device confirms whether switching to new firmware has been completed in a second electronic device among the plurality of electronic devices, where the second electronic device is on a connection route coupling the first electronic device which is a firmware switching target and the storage control device. The storage device inhibits incorporation of the second electronic device as a usable device in a case where switching to the new firmware has not been completed in the second electronic device.

Apparatus and method to control a storage device

A control apparatus includes first and second regions that each store device information of a monitoring target device; an evacuating region; and a processor configured to execute a procedure including: controlling switching between first and second states at a predetermined timing, the first state including the first region being in updatable and unreferenceable states and the second region being in referenceable and unupdatable states, the second state including opposite states to the first state; evacuating, in a case where the second region is being referred at a timing when the first state is switched to the second state, unreferred information stored in the second region to the evacuating region; controlling, after completion of evacuation, switching the state of the second region from referenceable to updatable; and controlling, after completion of reference to the unreferred information in the evacuating region, switching the state of the first region from updatable to referenceable.

Control apparatus and non-transitory recording medium having stored therein control program

In a control program for one storage control device in a storage device that includes a plurality of storage control devices that control storages and in which configuration information related to configurations of the storages is synchronized among the storage control devices, a process includes; storing, when having received a command to change the configuration information while another storage control device is executing update processing of updating a firmware, specification information specifying a plurality of divided pieces of command processing obtained by dividing processing of the command into executable units in a storage region; and executing each of the divided pieces of the command processing specified by the specification information while the other storage control device is executing any divided piece of the update processing, executable in parallel with the processing of the command.

Storage device, storage control device, and storage control program

Disclosed is a hot-dip Al&#x2014;Zn alloy coated steel sheet having excellent anti-corrosion property after coating, and a method for producing the same. In the disclosure, the hot-dip Al&#x2014;Zn alloy coated steel sheet has a hot-dip coating layer containing by mass %, Al: 25% to 90%, and at least one of Sn: 0.01% to 2.0%, In: 0.01% to 10%, and Bi: 0.01% to 2.0%.

Hot-dip Al&#x2014;Zn alloy coated steel sheet and method for producing same

In a storage control apparatus, an acquiring unit acquires first information indicating the frequency of random access to a first logical region and second information indicating the data size of random access, based on the content of access from the information processing apparatus. A controlling unit determines the size of storage areas to be allocated to a second logical region based on the second information indicating the data size of random access when the first information indicates that the frequency of random access is equal to or greater than a threshold value. The controlling unit creates the second logical region using a plurality of storage devices. The controlling unit controls access from the information processing apparatus such that the access is made to the second logical region instead of the first logical region.

Storage control apparatus, storage system, and storage control method to adjust RAID system strip size

A method for producing a high-strength hot-dip galvanized steel sheet includes a steel sheet containing, in percent by mass, 0.01% to 0.18% of C, 0.02% to 2.0% of Si, 1.0% to 3.0% of Mn, 0.001% to 1.0% of Al, 0.005% to 0.060% of P, 0.01% or less of S, and the balance being Fe and incidental impurities, and a galvanized coating layer on each surface of the steel sheet with a coating weight of 20 to 120 g/mper surface, in which, when the steel sheet is subjected to annealing and a hot-dip galvanizing treatment in a continuous hot-dip galvanizing line, the dew point of the atmosphere is controlled to &#x2212;40&#xb0; C. or lower in the annealing furnace temperature range of 750&#xb0; C. or higher.

High-strength hot-dip galvanized steel sheet and method for producing same

Provided is a method for manufacturing a high-strength galvanized steel sheet, made from a steel sheet containing Si and/or Mn, having excellent exfoliation resistance during heavy machining. When a steel sheet containing 0.01% to 0.18% C, 0.02% to 2.0% Si, 1.0% to 3.0% Mn, 0.001% to 1.0% Al, 0.005% to 0.060% P, and 0.01% or less S on a mass basis, the remainder being Fe and unavoidable impurities, is annealed and galvanized in a continuous galvanizing line, a temperature region with a furnace temperature of A&#xb0; C. to B&#xb0; C. (600&#x2266;A&#x2266;780 and 800&#x2266;B&#x2266;900) is performed at an atmosphere dew-point temperature of &#x2212;5&#xb0; C. or higher in a heating process.

High-strength galvanized steel sheet and method for manufacturing the same

A semiconductor memory device, including a plurality of pairs of bit lines; a plurality of memory cells coupled to a plurality of word lines and the plurality of pairs of bit lines; a plurality of sense amplifiers each coupled between a corresponding pair of bit lines; a plurality of first driver transistors coupled between at least one of the sense amplifiers and a first power supply line; a plurality of second driver transistors coupled between at least two of the sense amplifiers and a second power supply line; a pair of common data lines; a plurality of column selection gates each coupled between a corresponding one of pair of bit lines and a corresponding one of pair of common data lines, and a plurality of mask selection gates each coupled between a corresponding one of pair of bit lines and a corresponding one of column selection gates.

Semiconductor storage apparatus with mask selection gates for data write

A semiconductor memory device, including a plurality of word lines, a plurality of pairs of bit lines, a plurality of memory cells coupled to the plurality of word lines and the plurality of pairs of bit lines, a plurality of sense amplifiers each coupled between a corresponding pair of bit lines, a plurality of first driver transistors coupled between the plurality of sense amplifiers and a first power supply line, a plurality of second driver transistors coupled between the plurality of sense amplifiers and a second power supply line, a pair of common data lines, and a plurality of column selection gates each coupled between the corresponding pair of bit lines and the pair of common data lines, wherein the number of the first driver transistors is more than the number of the second driver transistor.

Semiconductor storage apparatus with different number of sense amplifier PMOS driver transistors and NMOS driver transistors

In order to more efficiently use a cache memory to realize improved response ability in a storage system, there provided are a cache memory which stores the data read from the storage apparatus, an access monitoring unit which monitors a state of access from the upper apparatus to the data stored in the storage apparatus, a schedule information creating unit which creates schedule information that determines contents to be stored in the cache memory based on the access state, and a memory controlling unit which controls record-processing of the data from the storage apparatus to the cache memory and removal-processing of the data from the cache memory based on the schedule information.

Control apparatus, storage system, and memory controlling method

A semiconductor storage apparatus according to the present invention includes a plurality of memory cells, a plurality of word lines, a plurality of pairs of bit lines, a plurality of sense amplifiers, a pair of common data lines, a data-to-be-written output circuit configured to, in writing data, set voltages of the common data lines forming the pair, a column selection signal output unit configured to output a plurality of column selection signals, and a plurality of column selection gates, in which in writing the data, the column selection signal output unit selectively turns on one of the column selection gates by setting each of voltages of the column selection signals to one of a level of a higher-potential power supply voltage and a level of a lower-potential power supply voltage, before activating the sense amplifiers.

Semiconductor storage apparatus with a data-to-be-written output circuit for carrying out an early data write

A storage control apparatus includes a controller configured to control to convert an access to logical volume into an access to associated RAID group in response to an access to the corresponding virtual volume on the basis of access conversion information, monitor frequency of access to each of logical volumes, select a logical volume on the basis of the monitored frequency of access, move data stored in a RAID group corresponding to the selected logical volume to a different RAID group corresponding to a logical volume to be a data shift destination, and update the access conversion information to convert access to the RAID group corresponding to the selected logical volume into access to the different RAID group.

Storage control apparatus, storage system and method

A RAID group control device for performing access control over one or more RAID groups each having redundancy. The RAID group control device includes an acquiring unit to acquire access frequency information with respect to a RAID group among the one or more RAID groups; a scheduling unit to find a time period exhibiting a lower access frequency than access frequencies of anterior and posterior time periods in a specified time range on the basis of the access frequency information, and to determine start timing of a process of rewriting firmware of drives belonging to the RAID group on the basis of the found time period; and a firmware rewrite processing unit to start the process of rewriting the firmware of the drives at the determined start timing.

Raid group control device

A storage control apparatus includes a controller for receiving an access command from a host computer and controlling an access to a storage device and a monitoring period obtaining section for obtaining a monitoring period corresponding to the access command. The storage device is capable of operating in one of a power saving state and a normal state. The controller causes the storage device to return from the power-saving state to the normal state if the storage device corresponding to the access command is in the power saving state, and sends the host computer a response for preventing a timeout corresponding to the access command if the storage device have not yet returned to the normal state when the monitoring period elapses from receiving the access command.

Storage control apparatus and method

Growing community of inventors

Kawasaki, Japan

Masahiro Yoshida