Panasonic Intellectual Property Management Co., Ltd.

Panasonic Corporation

Matsushita Electric Industrial Co., Ltd.

Skyworks Filter Solutions Japan Co., Ltd.

Matsushita Electronics Corporation

Masahiro Yasumi

Shoji Okamoto

Hiroyuki Nakamura

Tomohiro Iwasaki

Toru Yamaji

Mitsunori Miyanari

Atsushi Shunori

Mizuki Segawa

Michikazu Matsumoto

Hiroshi Ushio

Michihiko Hayashi

Kaoru Hiramoto

Masaya Nakatani

Makoto Takahashi

Kazunori Nishimura

Toshiki Yabu

Jiro Terada

Tomoya Komatsu

Kazuki Komaki

Satoshi Ohuchi

Kunitoshi Aono

Shinichi Ogawa

Akihiko Ohtani

Takami Ishida

Tatsuo Sugiyama

Jun Ogihara

Masato Kanazawa

Ichirou Matsuo

Takayuki Minemaru

Yuji Murashima

Yuuki Nakamura

Tadashi Fukumoto

Kouji Tamura

Sumihiro Otsuka

Noriteru Furumoto

Yuki Nakamura

A surface acoustic wave device comprises a substrate and an interdigital transducer (IDT) electrode disposed on the substrate. The IDT electrode includes a lower electrode layer having a lower surface in contact with an upper surface of the substrate and an upper electrode layer having a lower surface defining a base in contact with an upper surface of the lower electrode layer. Side surfaces of the lower electrode layer are substantially perpendicular to the upper surface of the substrate. Side surfaces of the upper electrode layer are disposed at an acute angle relative to the upper surface of the substrate.

Acoustic wave device including multi-layer interdigital transducer electrodes

An electrochemical measurement system includes an electrochemical measurement plate configured to have first and second biological samples placed thereon and an electrochemical measurement device connected to the electrochemical measurement plate. The electrochemical measurement plate includes a first well configured to have the first biological sample placed therein, a first measurement electrode group including first measurement electrodes provided within the first well, a second well configured to have the second biological sample placed therein, and a second measurement electrode group including second measurement electrodes provided within the second well. The electrochemical measurement device includes measurement circuits, a switching section that connects the measurement circuits selectively to the first measurement electrode group and the second measurement electrode group, and a controller that controls a potential applied to the first measurement electrodes and a potential applied to the second measurement electrodes. This electrochemical measurement system has a small size.

Electrochemical measurement system, electrochemical measurement device, and electrochemical measurement method

An electrochemical measuring method uses an electrochemical measuring device in which a measuring liquid is filled into a well. The electrochemical measuring method includes: a step of applying a measuring voltage to a working electrode and measuring a value of a first current flowing in the working electrode; a step of applying a non-measuring voltage to the working electrode; a step of introducing the biological sample into a container; and a step of applying the measuring voltage to the working electrode and measuring a value of a second current flowing in the working electrode.

Electrochemical measuring method and electrochemical measuring device

An electrochemical measurement device includes: a base; a specimen placement portion disposed on the base, for placing a biological specimen; a first electrode disposed on the base and surrounding the specimen placement portion; and a first insulating layer covering the first electrode. The first insulating layer has a plurality of openings, and the first electrode has a plurality of first electrode exposed portions which are portions of the first electrode that are exposed from the openings of the first insulating layer.

Electrochemical measurement device

Provided is an electrochemical measurement device capable of measuring more accurately and an electrochemical measurement apparatus provided with the electrochemical measurement device. The electrochemical measurement device includes a base part, and a placement part on which an object to be measured is placed, the placement part being provided to the base part. The electrochemical measurement device also includes an electrode part provided near the placement part on the base part, a wiring part provided on a surface of the base part and electrically connected to the electrode part, and an insulator that covers the wiring part. Further, a protruding part is provided on the base part of the electrochemical measurement device so as to protrude past the insulator.

Electrochemical measurement device and electrochemical measurement apparatus provided with electrochemical measurement device

An acoustic wave device comprises an IDT electrode disposed above an upper surface of a piezoelectric substrate and includes a plurality of electrode fingers configured to excite a main acoustic wave. A first dielectric film made of an oxide is disposed above the upper surface of the piezoelectric substrate and covers the plurality of electrode fingers. A second dielectric film made of non-oxide is disposed between the first dielectric film and each of the plurality of electrode fingers. A third dielectric film is disposed between the piezoelectric substrate and the plurality of electrode fingers. A speed of a transverse wave propagating through the third dielectric film is greater than a speed of the main acoustic wave propagating through the piezoelectric substrate. The third dielectric film contacts the first dielectric film between adjacent electrode fingers of the plurality of electrode fingers.

Acoustic wave device including multiple dielectric films

An electrochemical measurement device includes a chip, a working electrode, a first connection portion, a substrate, a second connection portion, a third connection portion, and an upper plate. The working electrode is disposed on the upper surface of the chip. The first connection portion is disposed on the upper surface of the chip, and is electrically connected to the working electrode. The second connection portion is disposed on the upper surface of the substrate. The third connection portion is disposed on the substrate, is electrically connected to the second connection portion, and is to be electrically connected to an external apparatus. The upper plate is disposed on the upper surfaces of the substrate and chip. The upper plate is provided with a first through hole through which the working electrode is exposed.

An acoustic wave device includes a piezoelectric substrate, an IDT electrode including plural electrode fingers disposed above an upper surface of the piezoelectric substrate, a first dielectric film made of oxide disposed above the upper surface of the substrate for covering the electrode fingers, and a second dielectric film made of non-oxide disposed on upper surfaces of the electrode fingers and between the first dielectric film and each of the electrode fingers. The first dielectric film contacts the upper surface of the piezoelectric substrate at a position between electrode fingers out of the plural electrode fingers adjacent to each other. The acoustic wave device prevents the electrode fingers of the IDT electrode from corrosion.

Acoustic wave device and electronic apparatus including same

An acoustic wave device includes a piezoelectric substrate, an interdigital transducer (IDT) electrode provided on an upper surface of the piezoelectric substrate, a first dielectric film covering the upper surface of the piezoelectric substrate to cover the IDT electrode, and a second dielectric film covering an upper surface of the first dielectric film. The second dielectric film includes a thin portion positioned in a tip region of electrode fingers of the IDT electrode and a thick portion which is positioned in a middle region of the IDT electrode and is thicker than the thin portion. The acoustic wave device suppresses spurious emission and has superior passband characteristics.

Acoustic wave device

An electronic component is disclosed, and this component includes an element with an electrode section which is formed of upper electrode (), lower electrode (), piezoelectric unit () placed between upper electrode () and lower electrode (), and adhesive layer () layered between upper electrode () and piezoelectric unit (). Piezoelectric unit () includes piezoelectric layer () made of piezoelectric material containing lead, and adhesive layer () includes a tungsten layer made of tungsten-based material. Piezoelectric layer () and the tungsten layer are layered together. The structure discussed above allows preventing a piezoelectric constant from lowering and a base-point voltage from varying. The lowering and the varying have been caused by a temperature-rise.

Electronic component and method for manufacturing the same

An upper adhesion layerformed between a piezoelectricity layerand an upper electrode layerso as to abut on the piezoelectricity layerand the upper electrode layeris included. The upper adhesion layerincludes a first tungsten layermade of tungsten in which an &#x3b1; phase and a &#x3b2; phase coexist and a second tungsten layermade of &#x3b1;-phase tungsten. The first tungsten layeris configured so as to abut on the piezoelectricity layer. It is possible to obtain a piezoelectric device which is capable of improving the adhesion property of both the piezoelectricity layer and the electrode layer and reducing a basic point voltage fluctuation at the time of high-temperature operation so as to improve reliability.

Piezoelectric device and its manufacturing method

In a production method of a piezoelectric element, an unneeded electric field is prevented from being applied to a piezoelectric thin film layer during the production process, resulting in a high performance piezoelectric element production method. The production method includes a first process for depositing an under electrode layer, a piezoelectric thin film layer and an upper electrode layer successively on a substrate such that the under electrode layer and the upper electrode layer form a short-circuit, a second process, after the first process, for etching including dry etching, the second process commenced while the under electrode layer and the upper electrode layer are short-circuited, a third process, after the second process, for polarizing by applying a voltage across the under electrode layer and the upper electrode layer, a fourth process, after the third process, for individualizing each piezoelectric element.

Process for fabricating piezoelectric element

The vibration-type piezoelectric acceleration sensor element includes a frame; and a diaphragm, support, and retentive part, provided in the frame. The diaphragm includes a bottom electrode layer, a piezoelectric thin-film layer formed on the bottom electrode layer, and a top electrode layer formed on the piezoelectric thin-film layer. A first end of the diaphragm is connected to the frame. The support retains a second end of the diaphragm. The retentive part retains the support so that the support is reciprocable only in a direction through the first end and the second end of the diaphragm.

Vibration-type piezoelectric acceleration sensor element and vibration-type piezoelectric acceleration sensor therewith

An n-channel active region, a p-channel active region and an isolation insulating film are formed, and a silicon film is deposited via a gate insulating film. After introducing n-type impurities into the n-channel region and p-type impurities into the p-channel region, a silicon gate electrode is formed in such a manner that its width is enlarged only in the boundary portion between the n-channel region and the p-channel region. After forming a side wall insulating film, an n-channel diffusion layer and a p-channel diffusion layer, a metal silicide layer is formed in a self-aligned manner on the surfaces of the silicon gate electrode, the n-channel diffusion layer and the p-channel diffusion layer.

Semiconductor device with varying width electrode

After phosphorus is ion implanted into a portion of a polysilicon film, first RTA is performed. After boron is ion implanted into another portion of the polysilicon film, the polysilicon film is patterned to form a gate electrode and a resistor film. A TEOS film is deposited and patterned to form a silicidation mask having an opening corresponding to a silicidation region. Thereafter, annealing for activating boron is performed in an atmosphere containing oxygen, thereby forming oxide films on a gate electrode and on heavily doped source/drain regions in the silicidation region. The oxide films suppress out-diffusion of the impurities and inhibit the impurity ions from penetrating the gate electrode during ion implantation for promoting silicidation, which is performed subsequently.

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Osaka, Japan

Masahiro Yasumi