Tokyo Electron Limited

International Business Machines Corporation

Masahiro Yamazaki

Sebastian Ulrich Engelmann

Kevin K Chan

Anthony J Annunziata

Eric Andrew Joseph

Deborah A Neumayer

Dario Leonardo Goldfarb

Toshihisa Nozawa

Nathan P Marchack

Robert L Bruce

Mahmoud M Khojasteh

Gen Pei Lauer

Hongwen Yan

Jun Yoshikawa

George Gabriel Totir

Marinus Hopstaken

Michitaka Aita

Koji Yamagishi

Takehisa Saito

Fumihiko Kaji

A cleaning method is provided. In the cleaning method, residues of elements of a group for a common semiconductor material in a chamber are removed with plasma of a halogen-containing gas. Residues of metal elements of groups 12 and 13 and groups 14 and 15 in the chamber are removed with plasma of a hydrocarbon-containing gas. A C-containing material in the chamber is removed with plasma of an O-containing gas. Further, the removing with the plasma of the halogen-containing gas, the removing with the plasma of the hydrocarbon-containing gas, and the removing with the plasma of the O-containing gas are performed in that order or the removing with the plasma of the hydrocarbon-containing gas, the removing with the plasma of the O-containing gas, and the removing with the plasma of the halogen-containing gas are performed in that order X times where X&#x2265;1.

Cleaning method and plasma processing apparatus

A gas is ionized into a plasma. A compound of a dopant is mixed into the plasma, forming a mixed plasma. Using a semiconductor device fabrication system, a layer of III-V material is exposed to the mixed plasma to dope the layer with the dopant up to a depth in the layer, forming a shallow doped portion of the layer. The depth of the dopant is controlled by a second layer of the dopant formed at the shallow doped portion of the layer. The second layer is exposed to a solution, where the solution is prepared to erode the dopant in the second layer at a first rate. After an elapsed period, the solution is removed from the second layer, wherein the elapsed period is insufficient to erode a total depth of the layer and the shallow doped portion by more than a tolerance erosion amount.

Plasma shallow doping and wet removal of depth control cap

A method of making a magnetic random access memory device comprises forming a magnetic tunnel junction on an electrode, the magnetic tunnel junction comprising a reference layer positioned in contact with the electrode, a tunnel barrier layer arranged on the reference layer, and a free layer arranged on the tunnel barrier layer; and depositing an encapsulating layer on and along sidewalls of the magnetic tunnel junction at a temperature of 40 to 60&#xb0; C. using remote microwave plasma deposition wherein the encapsulation layer comprises silicon and nitrogen. An MRAM device made by the aforementioned method is also disclosed.

Low temperature encapsulation for magnetic tunnel junction

A plasma processing apparatus includes a processing chamber configured to partition a processing space and a microwave generator configured to generate microwaves for plasma excitation. Further, the plasma processing apparatus includes a dielectric member mounted in the processing chamber so as to seal the processing space, and configured to introduce the microwaves generated by the microwave generator into the processing space. Further, the plasma processing apparatus includes an injector mounted in the dielectric member, and configured to supply the processing gas made in a plasma state due to the microwaves to the processing space through a through-hole formed in the dielectric member. Further, the plasma processing apparatus includes a waveguide plate made of a dielectric material mounted in the injector so as to surround the through-hole of the dielectric member, and configured to guide the microwaves propagated into the dielectric member toward the through-hole to an inside of the injector.

Plasma processing apparatus

Growing community of inventors

Elmsford, NY, United States of America

Masahiro Yamazaki