Mitsubishi Denki Kabushiki Kaisha

Masahiro Yamane

Kiyoshi Ishibashi

Yutaka Morita

Isamu Yamamoto

Kiyoji Imanaka

Shigeru Funakawa

Toshimi Watanabe

Keiji Itoga

The present invention provides a plastic encapsulated semiconductor device which comprises a connected metal plate having a plurality of semiconductor element holding parts which are connected in series in one direction with at least two connecting arms, said connecting arms having sectional area smaller than that of said semiconductor element holding part and being disposed inside of the side surface of said semiconductor element holding parts in the connecting direction. The invention provides a method of preparing semiconductor devices having relatively large current capacity of about 5 to 50 amperes used as diodes for automobiles and having high quality in the mass production.

Method of making plastic encapsulated semiconductor devices

This invention is directed to a semiconductor device comprised of a body of semiconductor material having at least one p-n junction terminating at an exposed surface of the body. The p-n junction is passivated at its termination point by a first, thin glass layer and a second glass layer disposed over the first thin glass layer. The second glass layer is thicker than the first glass layer and includes a predetermined amount of a suitable filler material.

Glass passivated junction semiconductor devices

Growing community of inventors

Itami, Japan

Masahiro Yamane