Tokyo Electron Limited

Masahiro Yamada

Hiroshi Nishikawa

Kenya Iwasaki

A method for separating a multiple number of semiconductor devices or semiconductor integrated circuits from a wafer on which the multiple number of semiconductor devices or semiconductor integrated circuits are formed is provided. The method includes separating each of the semiconductor devices or semiconductor integrated circuits. Each of the separated semiconductor devices or semiconductor integrated circuits is non-rectangular shaped, and the step of separating each of the semiconductor devices or semiconductor integrated circuits is performed by dry etching. A test device is formed on an area of a groove width required for separating the semiconductor devices or semiconductor integrated circuits, and the semiconductor devices or semiconductor integrated circuits are separated without a waste of space except for the area of the groove width required for separating the semiconductor devices or semiconductor integrated circuits, with the test device being separated from the semiconductor devices or semiconductor integrated circuits.

Method for separating and transferring IC chips

A method for separating a multiple number of semiconductor devices or semiconductor integrated circuits from a wafer on which the multiple number of semiconductor devices or semiconductor integrated circuits are formed is provided. The method includes forming a mask pattern on a surface of the wafer, and separating each of the semiconductor devices or semiconductor integrated circuits along the mask pattern formed on the surface of the wafer. The mask pattern is a repeated pattern without having a lattice line shape, and the step of separating each of the semiconductor devices or semiconductor integrated circuits is performed by plasma etching.

A method for separating a multiple number of semiconductor devices or semiconductor integrated circuits from a wafer on which the multiple number of semiconductor devices or semiconductor integrated circuits are formed is provided. The method includes: forming, on a surface of the wafer, a mask layer through which a line-shaped pattern to be removed for separating the semiconductor devices or semiconductor integrated circuits is exposed; and etching the exposed pattern to a depth equal to or larger than about &#x2154; of a thickness of the wafer. The line-shaped pattern is formed so as to prevent a test device formed on a gap between the semiconductor devices or semiconductor integrated circuits from remaining on separated semiconductor devices or semiconductor integrated circuits.

[Problems] There are provided a chip separation method and a chip transfer method using features of dry etching. [Means for Solving the Problems] In the chip separation method, a multiple number of semiconductor devices or semiconductor integrated circuits are separated from a waferon which the multiple number of semiconductor devices or semiconductor integrated circuits are formed. The method includes forming, on a surface of the wafer, a mask layer through which a line-shaped pattern to be removed for separating the semiconductor devices or semiconductor integrated circuits is exposed; and etching the exposed pattern to a depth equal to or larger than about &#x2154; of a thickness of the wafer. One group of separated semiconductor devices or semiconductor integrated circuits has a distinguishable shape from another group of separated semiconductor devices or semiconductor integrated circuits.

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Boise, ID, United States of America

Masahiro Yamada