Tiger Corporation

Toyo Tire Rubber Co., Ltd.

Sony Corporation

Sony Chemicals Corporation

C.i. Takiron Corporation

Masahiro Watanabe

Atsushi Kazuno

Kazuyuki Ogawa

Tetsuo Shimomura

Masahiko Nakamori

Takatoshi Yamada

Yujin Morisawa

Yoshiyuki Nakai

Toshihiro Shinohara

Keiichi Naitoh

Kazuya Koike

Yoichi Yagasaki

Seiji Kobayashi

Atsushi Ito

Kenji Tanaka

Jun Murayama

Tsuyoshi Kimura

Takuma Kaneko

Yuichiro Kanzaka

Shuuta Yuge

Kanae Tsukamoto

Atsuko Mori

What is provided is a heat-shrinkable film and a heat-shrinkable label that, when applied to a container in which the difference between the diameter of the body portion and the diameter of the mouth portion is large, sufficiently shrink in the mouth portion and do not easily allow the generation of a wrinkle or a sink mark in the mouth portion. The heat-shrinkable film contains polyester, a dicarboxylic acid component that constitutes the polyester contains 95 mol % or more of terephthalic acid, and a diol component that constitutes the polyester contains 50 mol % or more of ethylene glycol and 15 mol % or more of cyclohexanedimethanol. The shrinkage rate in the primary shrinkage direction when the heat-shrinkable film is immersed in hot water at 70° C. for 30 seconds is 20% or less, the shrinkage rate in the primary shrinkage direction when the heat-shrinkable film is immersed in hot water at 80° C. for 30 seconds is 45% to 65%, and the shrinkage rate in the primary shrinkage direction when the heat-shrinkable film is immersed in hot water at 98° C. for 30 seconds is 65% or more.

Heat-shrinkable film and heat-shrinkable label

Vacuum bottle

Heat retaining and cooking saucepan

A polishing pad enabling a highly precise optical endpoint sensing during the polishing process and thus having excellent polishing characteristics (such as surface uniformity and in-plane uniformity) is disclosed. A polishing pad enabling to obtain the polishing profile of a large area of a wafer is also disclosed. A polishing pad of a first invention comprises a light-transmitting region having a transmittance of not less than 50% over the wavelength range of 400 to 700 nm. A polishing pad of a second invention comprises a light-transmitting region having a thickness of 0.5 to 4 mm and a transmittance of not less than 80% over the wavelength range of 600 to 700 nm. A polishing pad of a third invention comprises a light-transmitting region arranged between the central portion and the peripheral portion of the polishing pad and having a length (D) in the diametrical direction which is three times or more longer than the length (L) in the circumferential direction.

Polishing pad and method of producing semiconductor device

The present invention provides a polishing pad used for planarizing inter layer dielectrics and the like by CMP (chemical mechanical polishing) in the manufacturing process of a semiconductor device, a method of producing the polishing pad and a method of producing a semiconductor device by using the polishing pad. The present invention relates to a semiconductor wafer polishing pad having grooves in a polishing surface and formed from a foamed polyurethane, wherein a processed surface of the groove comprising a side surface and a bottom surface has a surface roughness Ra of not more than 10.

Polishing pad, method of producing the same and method of producing semiconductor device by using the same

An image processing apparatus (), for performing image processing on image data which is obtained by performing imaging of a subject and in which the degree of motion blurring of an image represented by the image data changes in accordance with an imaging condition at the time of performing imaging of the subject, includes a motion information correcting unit () for correcting motion information representing motion concerning the image on the basis of imaging information representing the imaging condition, and a motion blurring adding unit () for adding motion blurring to the image by using the motion information corrected by the motion information correcting means to perform image processing on the image data.

Image processing device, image picking-up device, image processing method, and program

It is an object of the invention to provide a polishing pad capable of high precision optical detection of an endpoint during polishing in progress and prevention of slurry leakage from between a polishing region and a light-transmitting region during the use thereof even after the polishing pad has been used for a long period. It is a second object of the invention to provide a polishing pad capable of suppression of deterioration of polishing characteristics (such as in-plane uniformity) and generation of scratches due to a difference in behavior of a polishing region and a light-transmitting region during polishing. It is a third object of the invention to provide a polishing pad having a polishing region and a light-transmitting region with a concentration of a specific metal equal to or lower than a specific value (threshold value).

Polishing pad

The object of the invention is to provide a polishing pad capable of maintaining high-precision end-point optical detection over a long period from the start of use to the end of use even if polishing is performed with an alkaline or acid slurry, as well as a method of manufacturing a semiconductor device with this polishing pad. The polishing pad of the invention is used in chemical mechanical polishing and has a polishing region and a light-transmitting region, wherein the light-transmitting region satisfies that the difference &#x394;T (&#x394;T=T&#x2212;T) (%) between Tand Tis within 10(%) over the whole range of measurement wavelengths of from 400 to 700 nm, wherein Tis the light transmittance (%) of the light-transmitting region measured at the measurement wavelength &#x3bb; after dipping for 24 hours in a KOH aqueous solution at pH 11 or an HOaqueous solution at pH 4 and Tis the light-transmittance (%) measured at the measurement wavelength &#x3bb; before the dipping.

Polishing pad and semiconductor device manufacturing method

Stainless steel vacuum flask

In the present invention, a reference conductive layer and a first surface conductive layer are respectively provided on a surface and a back face of a first base film. The first base film includes a first via hole penetrating the first surface conductive layer. After a first electroless plating layer and a first conductive material are sequentially grown on a surface of the first base film, a first coating conductive layer composed of the first electroless plating layer, the first conductive material and the first surface conductive layer, is etched to have a reduced thickness. Then, the first coating conductive layer is patterned to form a first wiring layer. In this manner, a desired pattern width can be obtained even in the case where the first coating conductive layer is patterned by isotropic etching such as wet etching.

Method of manufacturing flexible wiring board

Growing community of inventors

Osaka, Japan

Masahiro Watanabe