Matsushita Electric Industrial Co., Ltd.

Nippon Paint Compnay, Ltd.

Masahiro Tsunooka

Masamitsu Shirai

Masayuki Endo

Takahiro Matsuo

Masaru Sasago

Shinji Kishimura

Kanji Nishijima

Katsukiyo Ishikawa

Makoto Tanaka

Pattern formation material and pattern formation method

Pattern formation material and method

Pattern forming material and pattern forming method

A pattern forming material includes a binary copolymer represented by the following general formula or a ternary or higher copolymer obtained by further polymerizing the binary copolymer with another group:

The pattern forming material of the present invention includes a polymer having a group which generates an acid when the polymer is irradiated with an energy beam or heated and a compound which generates a base when the compound is irradiated with an energy beam. The polymer is a binary polymer or a polymer of a higher degree obtained by polymerizing another group with a compound represented by the following general formula:

A pattern forming material includes a binary copolymer represented by the following general formula or a ternary or higher copolymer obtained by further polymerizing the binary copolymer with another group: ##STR1## wherein R.sub.1 indicates a hydrogen atom or an alkyl group; R.sub.2 and R.sub.3 independently indicate a hydrogen atom, an alkyl group, a phenyl group or an alkenyl group or together indicate a cyclic alkyl group, a cyclic alkenyl group, a cyclic alkyl group having a phenyl group or a cyclic alkenyl group having a phenyl group; R.sub.4 indicates a hydrogen atom or an alkyl group; x satisfies a relationship of 0&lt;x&lt;1; and y satisfies a relationship of 0&lt;y&lt;1.

The pattern forming material of the present invention includes a polymer having a group which generates an acid when the polymer is irradiated with an energy beam or heated and a compound which generates a base when the compound is irradiated with an energy beam. The polymer is a binary polymer or a polymer of a higher degree obtained by polymerizing another group with a compound represented by the following general formula: ##STR1## where R.sub.1 indicates a hydrogen atom or an alkyl group, and R.sub.2 and R.sub.3 independently indicate a hydrogen atom, an alkyl group, a phenyl group or an alkenyl group, or together indicate a cyclic alkyl group, a cyclic alkenyl group, a cyclic alkyl group having a phenyl group or a cyclic alkenyl group having a phenyl group.

A patterning material includes a polymer represented by a general formula: ##STR1## wherein R.sub.1 indicates a hydrogen atom or an alkyl group; R.sub.2 indicates a hydrophobic protecting group which is easily desorbed through a function of an acid; R.sub.3 indicates a hydrogen atom or an alkyl group; R.sub.4 and R.sub.5 independently indicate a hydrogen atom, an alkyl group, a phenyl group or an alkenyl group, or together indicate a cyclic alkyl group, a cyclic alkenyl group or a cyclic alkyl or alkenyl group having a phenyl group; x satisfies a relationship of 0&lt;x&lt;1; and y satisfies a relationship of 0&lt;y&lt;1.

Patterning material and patterning method

A method for forming a resist pattern which comprises irradiating an active light ray to a resist obtained by coating a photosensitive resin composition containing a compound capable of generating an acid due to irradiation of the active light ray and a silyloxy compound in a binder resin on a substrate through a pattern mask to decompose the silyloxy compound due to the acid generated at the irradiation region to form a silanol compound, and after removing the silanol compound, removing a film at the photosensitive region due to an oxygen plasma, a removal of said silanol compound being conducted by bringing the film after irradiation of the active light ray into contact with volatile organic solvent vapor having a boiling photosensitive composition.

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Sennan, Japan

Masahiro Tsunooka